SPICE MODEL of TPCA8058-H (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of TPCA8058-H (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of TPCA8058-H (Standard+BDS Model) in SPICE PARK
- 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: MOSFET (Model Parameters) PART NUMBER: TPCA8058-H MANUFACTURER: TOSHIBA REMARK: Body Diode (Model Parameters)
- 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2 MOSFET MODEL PSpice model parameter Model description LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility
- 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3 Transconductance Characteristics Circuit Simulation result Comparison table ID (A) gfs (S) %Error Measurement Simulation 5 42.000 43.295 3.08 10 62.000 61.814 -0.30 20 90.000 88.547 -1.61 50 146.000 143.567 -1.67 VDS=10V
- 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4 V_VGS 0V 1.0V 2.0V 3.0V 4.0V 5.0V -I(VDS) 0A 14A 28A 42A 56A 70A VGS 0 VDS 10V U1 TPCA8058-H Vgs-Id Characteristics Circuit Simulation result Evaluation circuit
- 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5 Comparison Graph Circuit Simulation result Comparison table ID (A) VGS (V) %Error Measurement Simulation 1 2.340 2.344 0.17 2 2.420 2.387 -1.36 5 2.530 2.472 -2.29 10 2.640 2.567 -2.77 20 2.760 2.700 -2.17 42 2.930 2.901 -0.99 70 3.120 3.086 -1.09 VDS=10V
- 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6 VGS 10V 0 VDS U1 TPCA8058-H V_VDS 0V 10mV 20mV 30mV 40mV 50mV -I(VDS) 0A 4A 8A 12A 16A Rds(on) Characteristics Circuit Simulation result Evaluation circuit Test condition: ID=19(A), VGS =10(V) Parameter Unit Measurement Simulation %Error RDS(on) mΩ 2.3 2.302 0.09
- 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7 Time*1m 0s 12ns 24ns 36ns 48ns 60ns V(W1:3) 0V 4V 8V 12V 0 D1 DMod - + W1 ION = 0 IOFF = 1mA W IGTD = 0 TF = 10n PW = 10m PER = 1 I1 = 0 I2 = 1m TR = 10n ID 38A VDD 24V U1 TPCA8058-H Gate Charge Characteristics Circuit Simulation result Evaluation circuit Test condition: VDD=24(V), ID=38(A), VGS=10(V) Parameter Unit Measurement Simulation %Error Qgs nc 11 11 0 Qgd nc 6.4 6.4 0 Qg nc 51 42.002 -17.64
- 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8 Capacitance Characteristics Simulation result Comparison table VDS (V) Cbd (pF) %Error Measurement Simulation 0.1 1790 1760 -1.68 0.5 1500 1500 0 1.0 1300 1285 -1.15 5.0 675 695 2.96 10.0 490 492 0.41 20.0 350 338 -3.43 Simulation Measurement
- 9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9 Time 1.84us 1.92us 2.00us 2.08us 2.16us 2.24us V(G) V(D)/1.5 0V 5V 10V 15V 20V U1 TPCA8058-H D V1TD = 2u TF = 20n PW = 5u PER = 500u V1 = 0 TR = 20n V2 = 20 VCC 15 0 RL 0.79 L2 50nH 12 L1 30nH 12 R2 4.7 G R1 4.7 Switching Time Characteristics Circuit Simulation result Evaluation circuit Test condition: ID=19(A), VDD=15(V), VGS=10/0(V) Parameter Unit Measurement Simulation %Error ton ns 13 12.406 -4.57
- 10. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 10 V_VDS 0V 0.4V 0.8V 1.2V 1.6V 2.0V -I(VDS) 0A 20A 40A 60A 80A 100A VGS 0 VDS U1 TPCA8058-H Output Characteristics Circuit Simulation result Evaluation circuit VGS=2.8V 3 3.1 3.2 3.3 3.4 3.6 10, 8, 6, 5, 4.5, 4
- 11. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 11 V_VDS 0V -0.2V -0.4V -0.6V -0.8V -1.0V I(VDS) 1.0A 10A 100A 1.0KA VDS 0 U1 TPCA8058-H FWD Forward Current Characteristics Circuit Simulation result Evaluation circuit
- 12. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 12 Comparison Graph Simulation result Comparison table IDR (A) -VDS (V) %Error Measurement Simulation 1 0.671 0.670 -0.15 2 0.691 0.692 0.14 5 0.722 0.723 0.14 10 0.750 0.748 -0.27 20 0.778 0.778 0.00 50 0.836 0.834 -0.24 100 0.900 0.900 0.00
- 13. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 13 Time 9.6us 9.8us 10.0us 10.2us 10.4us 10.6us I(R1) -400mA -300mA -200mA -100mA -0mA 100mA 200mA 300mA 400mA 0 V1TD = 0ns TF = 10ns PW = 10us PER = 1ms V1 = -9.2V TR = 10ns V2 = 10.7V R1 50 U1 TPCA8058-H Reverse Recovery Characteristics Circuit Simulation result Evaluation circuit Compare Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trj ns 16 15.951 -0.31
- 14. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 14 Reverse Recovery Characteristics Reference Trj = 16(ns) Trb = 78(ns) Conditions: Ifwd = lrev = 0.2(A), Rl = 50 Relation between trj and trb Example Measurement