SPICE MODEL of TK11A65D (Professional+BDP Model) in SPICE PARK
•
0 likes•195 views
SPICE MODEL of TK11A65D (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
Recommended
Recommended
More Related Content
What's hot
What's hot (20)
Viewers also liked
Viewers also liked (17)
Similar to SPICE MODEL of TK11A65D (Professional+BDP Model) in SPICE PARK
Similar to SPICE MODEL of TK11A65D (Professional+BDP Model) in SPICE PARK (15)
More from Tsuyoshi Horigome
More from Tsuyoshi Horigome (20)
Recently uploaded
Recently uploaded (20)
SPICE MODEL of TK11A65D (Professional+BDP Model) in SPICE PARK
- 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: MOSFET (Professional Model) PART NUMBER: TK11A65D MANUFACTURER: TOSHIBA REMARK: Body Diode (Professional Model)
- 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2 MOSFET MODEL PSpice model parameter Model description LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility
- 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3 Transconductance Characteristics Circuit Simulation result Comparison table ID (A) gfs (S) %Error Measurement Simulation 1 2.55 2.638 3.45 2 3.66 3.726 1.80 5 5.83 5.876 0.79 10 8.26 8.287 0.33 VDS=20V
- 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4 V_VGS 0V 2V 4V 6V 8V 10V -I(VDS) 0A 4A 8A 12A 16A 20A 0 VDS 20VU1 TK11A65D VGS Vgs-Id Characteristics Circuit Simulation result Evaluation circuit
- 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5 Comparison Graph Circuit Simulation result Comparison table ID (A) VGS (V) %Error Measurement Simulation 1 5.100 5.310 4.12 2 5.500 5.624 2.25 5 6.250 6.249 -0.02 10 7.000 6.955 -0.65 20 7.800 7.956 2.00 VDS=20V
- 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6 0 U1 TK11A65D VGS 10V VDS V_VDS 0V 0.50V 1.00V 1.50V 2.00V 2.50V 2.97V -I(VDS) 0A 1.0A 2.0A 3.0A 4.0A 5.0A Rds(on) Characteristics Circuit Simulation result Evaluation circuit Test condition: VGS=10(V), ID=5.5(A) Parameter Unit Measurement Simulation %Error RDS(on) Ω 0.54 0.54 0
- 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7 V_VDS 0V 10V 20V 30V 40V -I(VDS) 0A 4A 8A 12A 16A 20A 0 U1 TK11A65D VGS VDS Output Characteristics Circuit Simulation result Evaluation circuit VGS=5V 6 8 10 5.5 6.5 7 7.5
- 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8 Capacitance Characteristics Simulation result Comparison table VDS (V) Cbd (pF) %Error Measurement Simulation 0.1 2470 2450 -0.81 0.5 2250 2240 -0.44 1 1970 1972 0.10 10 1010 960 -4.95 Simulation Measurement
- 9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9 Time*1m 0s 5ns 10ns 15ns 20ns 25ns 30ns 35ns 40ns 45ns V(W1:3) 0V 4V 8V 12V 16V 20V U1 TK11A65D 0 D1 DMod - + W1 ION = 0 IOFF = 1mA WIGTD = 0 TF = 10n PW = 10m PER = 1 I1 = 0 I2 = 1m TR = 10n ID 11A VDD 400V Gate Charge Characteristics Circuit Simulation result Evaluation circuit Test condition: VDD=400(V), VGS=10(V), ID=11(A) Parameter Unit Measurement Simulation %Error Qgs nc 11 11 0.00 Qgd nc 10 10 0.00 Qg nc 30 30.011 0.03
- 10. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 10 Time 1.6us 1.8us 2.0us 2.2us 2.4us 2.6us V(G) V(U1:D)/20 0V 5V 10V 15V 20V U1 TK11A65D D V1TD = 2u TF = 20n PW = 5u PER = 500u V1 = 0 TR = 20n V2 = 20 VDD 200 0 RL 36 L2 50nH 12 L1 30nH 12 R2 50 G R1 50 Switching Time Characteristics Circuit Simulation result Evaluation circuit Test condition: VDD=200(V), VGS=0/10(V), ID=5.5(A) Parameter Unit Measurement Simulation %Error ton ns 80 79.67 -0.41
- 11. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 11 V_VDS 0V -0.3V -0.6V -0.9V -1.2V -1.5V I(VDS) 100mA 1.0A 10A 100A VDS 0 U1 TK11A65D Body Diode Forward Current Characteristics Circuit Simulation result Evaluation circuit
- 12. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 12 Comparison Graph Simulation result Comparison table IDR (A) -VDS (V) %Error Measurement Simulation 0.1 0.640 0.635 -0.80 0.2 0.650 0.652 0.31 0.5 0.675 0.678 0.44 1 0.700 0.703 0.43 2 0.740 0.739 -0.14 5 0.830 0.822 -0.96 10 0.940 0.943 0.32 20 1.118 1.170 4.62
- 13. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 13 Time 8.4us 9.2us 10.0us 10.8us 11.6us 12.4us I(R1) -400mA -300mA -200mA -100mA -0mA 100mA 200mA 300mA 400mA 0 V1TD = 0ns TF = 10ns PW = 10us PER = 1ms V1 = -9.2V TR = 10ns V2 = 10.7V R1 50 U1 DTK11A65D_P Reverse Recovery Characteristics Circuit Simulation result Evaluation circuit Compare Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trj us 0.36 0.351 -2.50 trb us 0.52 0.519 -0.19 trr us 0.88 0.870 -1.14
- 14. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 14 Reverse Recovery Characteristics Reference Trj = 0.36(us) Trb = 0.52(us) Conditions: Ifwd = lrev = 0.2(A), Rl = 50 Relation between trj and trb Example Measurement