SPICE MODEL of SSM3K7002AF (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional Model)
PART NUMBER: SSM3K7002AF
MANUFACTURER: TOSHIBA
Body Diode (Professional Model)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

3. Transconductance Characteristic
Circuit Simulation Result
500
Measurement
450
Simulation
400
Transconductance GFS (ms)
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160 180 200
Drain Current ID (mA)
Comparison table
gfs (ms)
ID (mA) Error (%)
Measurement Simulation
1 21.600 22.390 3.66
2 31.300 31.693 1.26
5 50.000 50.132 0.26
10 70.600 70.897 0.42
20 99.300 100.144 0.85
50 156.000 158.418 1.55
100 222.000 223.893 0.85
200 313.000 316.342 1.07
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

4. Vgs-Id Characteristic
Circuit Simulation result
1.0A
100mA
10mA
1.0mA
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V
I(V2)
V_V1
Evaluation circuit
V2
0Vdc
U1
SSM3K7002AF
Vv ariable
V1
0Vdc 10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID (mA) Error (%)
Measurement Simulation
1 1.250 1.277 2.14
2 1.300 1.314 1.05
5 1.400 1.387 -0.93
10 1.490 1.470 -1.37
20 1.610 1.587 -1.46
50 1.850 1.818 -1.71
100 2.110 2.080 -1.42
200 2.500 2.450 -2.00
500 3.270 3.186 -2.58
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

6. Rds(on) Characteristic
Circuit Simulation result
500mA
400mA
300mA
200mA
100mA
0A
0V 150mV 300mV 450mV 600mV 750mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
VDS
U1
SSM3K7002AF
10Vdc
VGS
10Vdc
0
c
Simulation Result
ID = 0.5A, VGS = 10V Measurement Simulation Error (%)
R DS (on)  1.5 1.5 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

7. Gate Charge Characteristic
Circuit Simulation result
12V
10V
8V
6V
4V
2V
0V
0 0.2n 0.4n 0.6n 0.8n 1.0n 1.2n 1.4n 1.6n 1.8n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
Dbreak
U1
SSM3K7002AF D1
I2
PER = 1000u W1 0.2Adc
PW = 600u +
TF = 10n
TR = 10n
-
TD = 0 W
I2 = 1m IOFF = 0.1mA V1
I1 = 0 I1 ION = 0uA 30Vds
0
Simulation Result
VDD=30V, ID=0.2A,
Measurement Simulation Error (%)
VGS=10V
Qgs nC 0.230 0.229 -0.43
Qgd nC 0.300 0.299 -0.33
Qg nC 1.600 1.630 1.87
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

8. Gate Charge Characteristic Reference
12
VDD=30V
10
8
VGS (V)
6
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Qg (nC)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd (pF)
VDS (V) Error (%)
Measurement Simulation
1 11.00 11.23 -2.05
2 10.00 10.20 -1.96
5 8.30 8.40 -1.19
10 6.70 6.65 0.75
20 4.90 4.97 -1.33
50 2.83 2.90 -2.41
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

10. Switching Time Characteristic
Circuit Simulation result
12V
10V
8V
6V
4V
2V
0V
-2V
1.97us 1.98us 1.99us 2.00us 2.01us 2.02us 2.03us
V(L3:1) V(L2:1)/3
Time
Evaluation circuit
L2
50nH
RL
150
U1
R2
L3 SSM3K7002AF
V1 = 0 50 30nH VDD
V2 = 20 V2 30
TD = 2us R3
TR = 5ns 50
TF = 5ns
PW = 10us
PER = 100us
0
Simulation Result
ID=0.2A, VDD=30V
Measurement Simulation Error (%)
VGS=0/10V
td(on) ns 3.00 2.95 -1.67
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

11. Output Characteristic
Circuit Simulation result
800mA
10 7 5 4.5
700mA
4.0
600mA
500mA 3.3
400mA 3.0
300mA 2.7
2.5
200mA
100mA VGS=2.3V
0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
SSM3K7002AF Vv ariable
0Vdc
Vstep
10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

12. Forward Current Characteristic
Circuit Simulation result
1.0A
0.9A
0.8A
0.7A
0.6A
0.5A
0.4A
0.3A
0.2A
0.1A
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
V1 D3K7002AF_PRO
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

13. Comparison Graph
Circuit Simulation Result
Simulation Result
VSD(V)
IDR(mA) %Error
Measurement Simulation
10 0.600 0.596 -0.62
20 0.660 0.657 -0.53
50 0.743 0.750 0.89
100 0.830 0.838 1.00
200 0.950 0.949 -0.12
500 1.140 1.137 -0.31
800 1.260 1.261 0.09
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

14. Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.88us 19.96us 20.04us 20.12us 20.20us 20.28us
I(R1)
Evaluation Circuit Time
R1
50
V1 = -9.3V V1 U1
V2 = 10.9V D3K7002AF_PRO
TD = 19ns
TR = 10ns
TF = 20ns
PW = 20us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 21.60 21.36 -1.11
trb ns 20.00 20.00 0.00
trr ns 41.60 41.36 -0.58
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

15. Reverse Recovery Characteristics Reference
Measurement
trj=21.60(ns)
trb=20.00(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008