The document is a device modeling report for the SSM3J14T power MOSFET, detailing parameters, circuit configurations, and simulation results including transconductance characteristics, gate charge, and capacitance measurements. It provides a comparison of simulation vs. measurement data across multiple parameters, indicating the performance and reliability of the device in various conditions. Additionally, it covers aspects such as the body diode characteristics and ESD protection diode modeling.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: SSM3J14T
MANUFACTURER: TOSHIBA
REMARK: P Channel Model
Body Diode (Model Parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1

2. Circuit Configuration
U1
SSM3J14T
MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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2

3. Transconductance Characteristic
Circuit Simulation Result
5
Measurement
4.5 Simulation
4
3.5
3
gfs(s)
2.5
2
1.5
1
0.5
0
0 0.5 1 1.5 2 2.5
- ID: Drain current (A)
Comparison table
gfs
- Id(A) Error(%)
Measurement Simulation
0.100 0.960 1.003 -4.46
0.200 1.396 1.412 -1.16
0.500 2.267 2.214 2.33
1.000 3.189 3.102 2.73
2.000 4.280 4.329 -1.15
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3

4. Vgs-Id Characteristic
Circuit Simulation result
-10A
-10mA
0V -1.0V -2.0V -3.0V -4.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
SSM3J14T V2
-5
V1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
4

5. Comparison Graph
Circuit Simulation Result
10000
Measurement
Simulation
- ID: Drain current (mA)
1000
100
10
0.000 1.000 2.000 3.000
- VGS: Gate-source voltage (V)
Simulation Result
- VGS(V)
- ID(mA) Error (%)
Measurement Simulation
10.000 1.780 1.814 -1.92
20.000 1.830 1.840 -0.55
50.000 1.900 1.892 0.44
100.000 1.950 1.950 0.00
200.000 2.040 2.033 0.34
500.000 2.200 2.198 0.08
1000.000 2.400 2.386 0.57
2000.000 2.650 2.656 -0.23
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5

6. Rds(on) Characteristic
Circuit Simulation result
-2.0A
-1.5A
(-85.048m,-1.3500)
-1.0A
-0.5A
0A
0V -60mV -120mV -180mV
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U1 V3
SSM3J14T
0Vdc
V1
-10
0
Simulation Result
ID=-1.35A, VGS=-10V Measurement Simulation Error (%)
R DS (on) (m) 63 63 0
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6

7. Gate Charge Characteristic
Circuit Simulation result
-10V
-8V
-6V
-4V
-2V
0V
0 2n 4n 6n 8n 10n 12n
V(W1:4)
Time*1mA
Evaluation circuit
Simulation Result
VDD=-24V,ID=-2.7A
Measurement Simulation Error (%)
,VGS=-10V
Qgs(nC) 1.5 1.562 4.13
Qgd(nC) 2.1 2.027 -3.48
Qg(nC) 9.97 9.674 -2.97
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7

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
- VDS(V) Error(%)
Measurement Simulation
0.5 132.000 132.200 0.152
1 107.000 107.000 0.000
2 81.000 82.000 1.235
5 53.900 54.500 1.113
10 40.000 40.100 0.250
20 30.000 29.800 -0.667
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
8

9. Switching Time Characteristic
Circuit Simulation result
-5.0V
1 2
-15V
-10V
-2.5V
-5V
>>
0V 0V
1.84us 1.90us 2.00us 2.10us 2.20us
1 V(U1:G) 2 V1(L1)
Time
Evaluation circuit
L1 R3
30nH
15
R1 U1
L2 SSM3J14T
30nH
V1 = 0 V2 10 -15 V1
V2 = -8 R2
TD = 2u 10
TR = 10n
TF = 10n
PW = 10u
PER = 50u
0
Simulation Result
ID=-1A, VDD=-15V
Measurement Simulation Error(%)
VGS=0~-4V, RG=10
Ton(ns) 29.000 29.046 0.16
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
9

10. Output Characteristic
Circuit Simulation result
-6.0A
-10V -5V -4V -3.5V
-5.0A
-4.0A
-3V
-3.0A
-2.0A
VGS= -2.5V
-1.0A
0A
0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V -1.4V -1.6V -1.8V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1 V2
SSM3J14T
0
V1
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
3.0A
2.0A
1.0A
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U1
SSM3J14T
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
3
Measurement
Simulation
3
- IDR: Drain reverse current (A)
2
2
1
1
0
0.000 0.500 1.000 1.500
VDS Drain-source voltage VSD (V)
Simulation Result
VDS(V)
IDR(A) %Error
Measurement Simulation
0.100 0.650 0.651 -0.15
0.200 0.680 0.679 0.15
0.500 0.720 0.719 0.14
1.000 0.750 0.753 -0.40
2.000 0.795 0.793 0.25
3.000 0.820 0.821 -0.12
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12

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
0.94us 0.96us 0.98us 1.00us 1.02us 1.04us 1.06us 1.08us 1.10us 1.12us
I(RL)
Time
Evaluation Circuit
RL
50
V1 = -9.35 V1
V2 = 10.6 U1
TD = 0n SSM3J14T
TR = 10n
TF = 10n
PW = 1u
PER = 100u
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj(ns) 8.400 8.594 2.310
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13

14. Reverse Recovery Characteristic Reference
Trj=8.4(ns)
Trb=19.6(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
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14

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
U1
R1 SSM3J14T
R2
0.01m 1G
V1
0Vdc
0
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16. Zener Voltage Characteristic Reference
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