SPICE MODEL of 2SK3705 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: 2SK3705
MANUFACTURER: SANYO
REMARK: Body Diode (Model Parameters) /
ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs (s)
Id(A) Error (%)
Measurement Simulation
1 11.600 12.038 3.78
2 16.400 16.950 3.35
5 25.700 26.545 3.29
10 36.000 37.136 3.16
20 50.000 51.725 3.45
50 77.500 79.400 2.45
100 106.000 108.714 2.56
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4. Vgs-Id Characteristic
Circuit Simulation result
100A
90A
80A
70A
60A
50A
40A
30A
20A
10A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1 V2
2SK3705
10
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 2.320 2.318 -0.086
2 2.380 2.387 0.294
5 2.520 2.525 0.198
10 2.680 2.682 0.075
20 2.900 2.907 0.241
50 3.355 3.363 0.238
100 3.900 3.893 -0.179
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
5

6. Rds(on) Characteristic
Circuit Simulation result
28A
24A
20A
16A
12A
8A
4A
0A
0V 40mV 80mV 120mV 160mV 200mV 240mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
VDS
U1
2SK3705 0Vdc
V1
10
0
Simulation Result
ID = 26A, VGS = 10V Measurement Simulation Error (%)
R DS (on) m 9.000 8.999 -0.01
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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7. Gate Charge Characteristic
Circuit Simulation result
10V
9V
8V
7V
6V
5V
4V
3V
2V
1V
0V
0 10n 20n 30n 40n 50n 60n 70n 80n 90n
V(W1:3)
Time*1mA
Evaluation circuit
I2
D2
U1 Dbreak 52
2SK3705
PER = 1000u W1
PW = 600u +
TF = 5n VDD
TR = 5n -
TD = 0 I1 W
I2 = 1m IOFF = 1mA 30
I1 = 0 ION = 0uA
0
Simulation Result
VDD=30V, ID=52A,
Measurement Simulation Error (%)
VGS=10V
Qgs nC 18.000 18.154 0.86
Qgd nC 16.000 16.073 0.46
Qg nC 100.000 74.088 -25.91
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
7

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd (pF)
VDS (V) Error (%)
Measurement Simulation
0.0 1500.00 1503.000 0.20
1.0 850.00 842.000 -0.94
2.0 605.00 610.000 0.83
5.0 395.00 400.000 1.27
10.0 290.00 286.000 -1.38
15.0 230.00 229.000 -0.43
20.0 200.00 198.000 -1.00
25.0 180.00 178.000 -1.11
30.0 160.00 158.000 -1.25
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
8

9. Switching Time Characteristic
Circuit Simulation result
12V 40V
1 2
10V
8V
6V 20V
4V
2V
>>
0V 0V
0.6us 0.8us 1.0us 1.2us 1.4us 1.6us
1 V(U1:G) 2 V(U1:D)
Time
Evaluation circuit
L2 RL
50nH 1.15
R1 L1
U1
2SK3705 VDD
V1 = 0 30nH 30Vdc
V2 = 20 V2 50
TD = 1u
TR = 5n R2
TF = 5n 50
PW = 10u
PER = 20u
0
Simulation Result
ID=26A, VDD=30V
Measurement Simulation Error (%)
VGS=0/10V
td(on) ns 38.000 38.072 0.19
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
9

10. Output Characteristic
Circuit Simulation result
100A
90A
10 8 6
4
80A 55
70A
60A
50A
40A
30A
VGS=3V
20A
10A
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1 V2
2SK3705
V1 10
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10

11. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
10mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(Vsense)
V_VSD
Evaluation Circuit
Vsense
0Vdc
VSD
U1
2SK3705
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VSD(V)
IDR(A) %Error
Measurement Simulation
0.01 0.545 0.545 0.06
0.02 0.562 0.563 0.18
0.05 0.587 0.586 -0.12
0.10 0.606 0.604 -0.30
0.20 0.620 0.622 0.32
0.50 0.648 0.649 0.08
1.00 0.670 0.671 0.15
2.00 0.700 0.697 -0.43
5.00 0.747 0.744 -0.40
10.00 0.790 0.792 0.25
20.00 0.855 0.857 0.23
50.00 1.000 0.998 -0.20
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
12

13. Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
18.4us 19.2us 20.0us 20.8us 21.6us 22.4us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.45v V1
V2 = 10.65v
TD = 224ns
TR = 10ns
TF = 10ns U1
PW = 20us 2SK3705
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 40.000 41.334 3.34
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13

14. Reverse Recovery Characteristic Reference
Measurement
Trj= 40 (ns)
Trb= 128 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
14

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.001m
U1
V1 2SK3705
0Vdc
R2
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
16