Modeling Report for Power MOSFET
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The document provides a device modeling report for a TOSHIBA SSM3K7002F power MOSFET. It includes: 1) Model parameters for the MOSFET and its body diode. 2) Simulation results and comparisons to measurements for key characteristics like transconductance, Vgs-Id, Rds(on), gate charge, capacitance, switching time and output/forward/reverse characteristics. 3) Circuit schematics used to simulate the characteristics. 4) References measurement results for some characteristics. The report summarizes the modeling of the MOSFET and validation of the model against experimental measurements for accurate circuit simulation.
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Modeling Report for Power MOSFET
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Model Parameters) PART NUMBER: SSM3K7002F MANUFACTURER: TOSHIBA Body Diode (Model Parameters) / ESD Protection Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 3. Transconductance Characteristic Circuit Simulation Result 500 Measurement 450 Simulation Transconductance GFS (ms) 400 350 300 250 200 150 100 50 0 0 50 100 150 200 Drain Current ID (mA) Comparison table Gfs (ms) ID (mA) Error (%) Measurement Simulation 1 28.200 28.973 2.74 2 40.700 40.973 0.67 5 64.200 64.773 0.89 10 91.300 91.580 0.31 20 130.000 129.466 -0.41 50 204.600 204.552 -0.02 100 290.000 289.036 -0.33 200 410.000 408.172 -0.45 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 4. Vgs-Id Characteristic Circuit Simulation result 1.0A 100mA 10mA 1.0mA 0V 1.0V 2.0V 3.0V 4.0V I(V2) V_V1 Evaluation circuit V2 0Vdc U1 SSM3K7002F Vv ariable V1 10Vdc 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 5. Comparison Graph Circuit Simulation Result 1000 Measurement Simulation Drain C urrent ID (mA) 100 10 1 0 1 2 3 4 Gate-Source Voltage VGS (V) Simulation Result VGS(V) ID (mA) Error (%) Measurement Simulation 1 1.510 1.556 3.01 2 1.560 1.584 1.54 5 1.640 1.641 0.05 10 1.718 1.705 -0.77 20 1.815 1.795 -1.09 50 2.000 1.975 -1.26 100 2.180 2.178 -0.11 200 2.440 2.464 0.99 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 6. Rds(on) Characteristic Circuit Simulation result 500mA 400mA 300mA 200mA 100mA 0A 0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V I(Vsense) V_VDS Evaluation circuit V2 0Vdc U1 SSM3K7002F Vv ariable V1 10Vdc 10Vdc 0 Simulation Result ID = 0.5A, VGS = 10V Measurement Simulation Error (%) R DS (on) 2.00 2.00 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 7. Gate Charge Characteristic Circuit Simulation result 10V 9V 8V 7V 6V 5V 4V 3V 2V 1V 0V 0 0.4n 0.8n 1.2n 1.6n 2.0n 2.4n 2.8n 3.2n 3.6n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc Dbreak U1 D1 SSM3K7002F I2 PER = 1000u W1 0.2Adc PW = 600u + TF = 10n TR = 10n - TD = 0 W I2 = 1m IOFF = 0.1mA V1 I1 = 0 I1 ION = 0uA 30Vds 0 Simulation Result VDD=30V, ID=0.2A, Measurement Simulation Error (%) VGS=10V Qgs nC 0.220 0.230 4.55 Qgd nC 0.200 0.190 -5.00 Qg nC 1.480 1.519 2.64 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 8. Gate Charge Characteristic Reference Measurement VGS-Qg 12 VDD=30V 10 8 VGS (V) 6 4 2 0 0 0.4 0.8 1.2 1.6 2 Qg (nC) All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd (pF) VDS (V) Error (%) Measurement Simulation 1 14.300 14.200 0.70 2 12.500 12.700 -1.57 5 9.200 9.250 -0.54 5 9.200 9.250 -0.54 10 6.200 6.250 -0.80 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 10. Switching Time Characteristic Circuit Simulation result 12V 10V 8V 6V 4V 2V 0V -2V 1.97us 1.98us 1.99us 2.00us 2.01us 2.02us 2.03us 2.04us V(L3:2) V(L2:1)/3 Time Evaluation circuit L2 30nH RL 150 R2 L3 U1 SSM3K7002F V1 = 0 50 30nH V2 = 20 V2 R3 VDD TD = 2u 50 30 TR = 5n TF = 5n PW = 10u PER = 100u 0 Simulation Result ID=0.2A, VDD=30V Measurement Simulation Error (%) VGS=0/10V td(on) ns 2.400 2.417 0.71 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 11. Output Characteristic Circuit Simulation result 1.0A 0.9A 10 0.8A 7 5 0.7A 4.5 4.0 0.6A 3.3 0.5A 3.0 0.4A 2.7 0.3A 2.5 0.2A 0.1A VGS=2.3V 0A 0V 0.5V 1.0V 1.5V 2.0V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc Vv ariable U1 SSM3K7002F 0Vdc Vstep 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 12. Forward Current Characteristic Circuit Simulation Result 1.0A 0.9A 0.8A 0.7A 0.6A 0.5A 0.4A 0.3A 0.2A 0.1A 0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U1 SSM3K7002F 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 13. Comparison Graph Circuit Simulation Result Simulation Result VSD(V) IDR(mA) %Error Measurement Simulation 10 0.630 0.630 0.04 20 0.680 0.679 -0.21 50 0.745 0.748 0.34 100 0.810 0.807 -0.35 200 0.880 0.880 0.02 500 1.025 1.022 -0.34 800 1.130 1.133 0.27 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 14. Reverse Recovery Characteristics Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 20.60us 20.64us 20.68us 20.72us 20.76us 20.80us I(R1) Time Evaluation Circuit R1 50 SSM3K7002F V1 = -9.5v V1 U1 V2 = 10.75v TD = 0.65u TR = 20ns TF = 20ns PW = 20us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 19.20 19.00 -1.04 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 15. Reverse Recovery Characteristics Reference Measurement trj=19.20(ns) trb=11.60(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 16. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R4) V_V3 Evaluation Circuit R4 0.01m open open V3 Ropen 0Vdc U1 SSM3K7002F 100MEG 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 17. Zener Voltage Characteristic Reference Measurement All Rights Reserved Copyright (c) Bee Technologies Inc. 2008