SPICE MODEL of SSM3K318T (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: SSM3K318T
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

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Transconductance Characteristics
Circuit Simulation result
Comparison table
ID (A)
gfs (S)
%Error
Measurement Simulation
0.02 0.429 0.432 0.65
0.05 0.690 0.694 0.57
0.1 0.997 1.002 0.50
0.2 1.446 1.448 0.15
0.5 2.383 2.386 0.11
1 3.545 3.540 -0.16
2 5.383 5.373 -0.19
4 8.474 8.400 -0.87
VDS=5V

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V_VGS
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(U1:3)
10mA
100mA
1.0A
10A
VGS
V1
5V
0
U1
SSM3K318T
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Circuit Simulation result
Comparison table
ID (A)
VGS (V)
%Error
Measurement Simulation
0.01 2.340 2.411 3.03
0.02 2.410 2.438 1.16
0.05 2.505 2.491 -0.55
0.1 2.600 2.550 -1.92
0.2 2.700 2.632 -2.52
0.5 2.855 2.789 -2.30
1 2.975 2.959 -0.55
2 3.150 3.184 1.09
4 3.350 3.477 3.79
VDS=5V

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VGS
10V
0
V1
U1
SSM3K318T
V_V1
0V 40mV 80mV 120mV 160mV 200mV
I(U1:3)
0A
0.5A
1.0A
1.5A
2.0A
2.5A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VGS=10(V), ID=2(A)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 83.500 83.341 -0.19

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V_V1
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(U1:3)
0A
1.0A
2.0A
3.0A
4.0A
5.0A
VGS
0
V1
U1
SSM3K318T
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS=3V
4.0V
10V
3.5V
4.5V

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Capacitance Characteristics
Simulation result
Comparison table
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
0.1 110.000 109.560 -0.40
0.2 95.000 94.700 -0.32
0.5 68.000 68.510 0.75
1 47.000 48.265 2.69
2 31.500 31.475 -0.08
5 16.500 16.620 0.73
10 9.700 9.680 -0.21
20 5.900 5.627 -4.63
50 2.800 2.720 -2.86
60 2.400 2.350 -2.08
Simulation
Measurement

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Time*1mA
0 2.0n 4.0n 6.0n 8.0n
V(W1:3)
0V
2V
4V
6V
8V
10V
U1
SSM3K318T
D1
dmod ID
2.5A
VDD
30V
0
-
+
W1
ION = 0
IOFF = 1mA
WIGTD = 0
TF = 10n
PW = 10m
PER = 1
I1 = 0
I2 = 1m
TR = 10n
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=30(V), VGS=10(V), ID=2.5(A)
Parameter Unit Measurement Simulation %Error
Qgs nC 1.000 1.007 0.69
Qgd nC 2.200 2.194 -0.25
Qg nC 7.000 6.999 -0.01

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Time
1.90us 1.95us 2.00us 2.05us 2.10us 2.15us
V(U1:1) V(U1:3)/6.667
0V
1.0V
2.0V
3.0V
4.0V
5.0V
6.0V
L1
30nH
1 2
R2
10
R1
10
U1
SSM3K318T
V1TD = 2u
TF = 4n
PW = 5u
PER = 500u
V1 = 0
TR = 4n
V2 = 9 VDD
30V
0
RL
30
L2
30nH
12
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=30(V), VGS=0/4.5(V), ID=1(A), RG=10
Parameter Unit Measurement Simulation %Error
ton ns 14.000 14.001 0.01

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V_VDS
0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V
I(VDS)
1.0mA
10mA
100mA
1.0A
10A
0
VDS
U1
SSM3K318T
Body Diode Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
IDR (A)
-VDS (V)
%Error
Measurement Simulation
0.001 0.555 0.555 -0.09
0.002 0.575 0.574 -0.21
0.005 0.599 0.600 0.10
0.01 0.619 0.619 -0.03
0.02 0.639 0.638 -0.13
0.05 0.664 0.664 0.03
0.1 0.685 0.685 -0.04
0.2 0.705 0.707 0.23
0.5 0.743 0.740 -0.39
1 0.772 0.771 -0.10
2 0.809 0.810 0.12
5 0.879 0.879 -0.05

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Time
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
U1
DSSM3K318T_P
0
V1TD = 0ns
TF = 3ns
PW = 1us
PER = 100us
V1 = -9.3V
TR = 3ns
V2 = 10.7V
R1
50
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 9.600 9.667 0.70
trb ns 6.400 6.381 -0.30
trr ns 16.000 16.048 0.30

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Reverse Recovery Characteristics Reference
trj = 9.6(ns)
trb = 6.4(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement

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V_VGS
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V
-I(VGS)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
VGS
0
R1
1G
U1
SSM3K318T
ESD PROTECTION DIODE
Zener Voltage Characteristics
Circuit Simulation result
Evaluation circuit

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Zener Voltage Characteristics Reference
IZ = 1(mA)
VZ =31.5(V) at IZ=2mA
Measurement