SPICE MODEL of SCS110AG , TC=-25degree , LTspice (Professional Model) in SPICE PARK

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SPICE MODEL of SCS110AG , TC=-25degree , LTspice (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of SCS110AG , TC=-25degree , LTspice (Professional Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Silicon Carbide Schottky DiodePART NUMBER: SCS110AG_-25cMANUFACTURER: ROHMREMARK: Professional ModelREPORT:(LTspice IV) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  2. 2. Spice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  3. 3. Forward Current CharacteristicCircuit Simulation ResultEvaluation Circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  4. 4. Comparison GraphCircuit Simulation Result 100.000 Measurement Simulation 10.000 FORWARD CURRENT: IF(A) 1.000 0.100 0.010 0.001 0.0 0.5 1.0 1.5 2.0 2.5 FORWARD VOLTAGE: VF(V)Simulation Result VF(V) IF(A) Error (%) Measurement Simulation 0.001 0.9500 0.9471 -0.30 0.01 1.0100 1.0070 -0.30 0.1 1.0700 1.0695 -0.05 0.2 1.0900 1.0908 0.07 0.5 1.1250 1.1244 -0.05 1 1.1600 1.1589 -0.09 2 1.2050 1.2100 0.41 5 1.3300 1.3332 0.24 10 1.5100 1.5170 0.46 15 1.7000 1.6933 -0.39 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  5. 5. Junction Capacitance CharacteristicCircuit Simulation ResultEvaluation Circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  6. 6. Comparison GraphCircuit Simulation Result 1000 Measurement CAPACITANCE BETWEEN TERMINAL: Ct(pF) Simulation 100 10 1 0.1 1 10 100 REVERSE VOLTAGE:VR(V)Simulation Result C (pF) VR(V) Error (%) Measurement Simulation 0.1 495.522 500.945 1.09 0.2 478.484 484.972 1.36 0.5 432.707 437.279 1.06 1 381.755 382.943 0.31 2 315.733 317.098 0.43 5 227.287 228.635 0.59 10 170.646 171.457 0.48 20 125.176 125.891 0.57 50 82.750 82.216 -0.65 100 60.545 59.210 -2.20 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  7. 7. Reverse Recovery CharacteristicCircuit Simulation Result Time (s)Evaluation CircuitCompare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 7.500 7.468 -0.42 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  8. 8. Reverse Recovery Characteristic Reference MeasurementTrj =7.5(ns)Trb=16.0(ns)Conditions: Ifwd=0.2A, Irev=0.2A, Rl=50Ω Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  9. 9. Reverse CharacteristicCircuit Simulation ResultEvaluation Circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  10. 10. Comparison GraphCircuit Simulation Result 100000 Measurement Simulation 10000 REVERSE CURRENT:IR(nA ) 1000 100 10 1 0 100 200 300 400 500 600 REVERSE VOLTAGE:VR(V)Simulation Result IR(nA) VR(V) Error (%) Measurement Simulation 20 2.1000 2.0962 -0.18 100 2.3000 2.2804 -0.85 200 2.6590 2.6677 0.33 300 4.3000 4.2257 -1.73 400 14.0000 14.3290 2.35 500 83.0000 86.7290 4.49 600 640.0000 613.3040 -4.17 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

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