The document is a device modeling report for the silicon carbide Schottky diode SCS110AG manufactured by ROHM, detailing various specifications and performance characteristics. It includes simulation results for forward current, junction capacitance, and reverse recovery characteristics, comparing measured values against simulations. Copyright information indicates all content is protected under Bee Technologies Inc.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: SCS110AG
MANUFACTURER: ROHM
REMARK: Standard Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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3. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
10mA
1.0mA
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 D1
0Vdc SCS110AG
0
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4. Comparison Graph
Circuit Simulation Result
100.000
Measurement
Simulation
10.000
FORWARD CURRENT: IF(A)
1.000
0.100
0.010
0.001
0.0 0.5 1.0 1.5 2.0 2.5
FORWARD VOLTAGE: VF(V)
Simulation Result
VF(V)
IF(A) Error (%)
Measurement Simulation
0.001 0.8800 0.8860 0.68
0.01 0.9400 0.9459 0.63
0.1 1.0100 1.0091 -0.09
0.2 1.0350 1.0311 -0.38
0.5 1.0700 1.0669 -0.29
1 1.1070 1.1050 -0.18
2 1.1700 1.1628 -0.62
5 1.3000 1.3030 0.23
10 1.5000 1.5062 0.41
15 1.7000 1.6964 -0.21
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5. Junction Capacitance Characteristic
Circuit Simulation Result
1.0n
100p
10p
1.0p
100mV 1.0V 10V 100V
I(V2)/(600V/500n)
V(N36166)
Evaluation Circuit
V2
0Vdc
V2 = 600 V1 D1
V1 = 0 SCS110AG
TD = 0
TR = 500ns
TF = 500ns
PW = 100us
PER = 500us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

6. Comparison Graph
Circuit Simulation Result
1000
Measurement
CAPACITANCE BETWEEN TERMINAL: Ct(pF)
Simulation
100
10
1
0.1 1 10 100
REVERSE VOLTAGE:VR(V)
Simulation Result
C (pF)
VR(V) Error (%)
Measurement Simulation
0.1 530.012 533.839 0.72
0.2 507.843 517.441 1.89
0.5 458.372 463.662 1.15
1 400.824 403.313 0.62
2 331.687 331.478 -0.06
5 234.876 237.073 0.94
10 176.213 177.055 0.48
20 129.285 129.551 0.21
50 84.692 84.318 -0.44
100 62.109 60.590 -2.45
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

7. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
1.98us 2.00us 2.02us 2.06us 2.08us 2.10us 2.12us 2.16us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.25V
V2 = 11.1V
TD = 28n
TR = 20ns V1 D1
PW = 2us SCS110AG
TF = 15ns
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 7.500 7.509 0.11
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8. Reverse Recovery Characteristic Reference
Measurement
Trj =7.5(ns)
Trb=16.00(ns)
Conditions: Ifwd=0.2A, Irev=0.2A, Rl=50Ω
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010