SPICE MODEL of IDH06SG60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDH06SG60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1

2. Circuit Configuration
U1
IDH06SG60C
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2

3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
3

4. Forward Current Characteristics
Circuit Simulation result
8.0A
6.0A
4.0A
2.0A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDH06SG60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
4

5. Comparison Graph
Circuit Simulation result
8
Measurement
7 Simulation
6
Forword Current, I F (A)
5
4
3
2
1
0
0 1 2 3 4
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.1 0.880 0.901 2.36
0.2 0.930 0.937 0.77
0.5 1.010 1.016 0.62
1 1.150 1.127 -2.03
2 1.350 1.329 -1.54
5 1.900 1.907 0.36
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
5

6. Reverse Current Characteristic
Circuit Simulation result
10uA
1.0uA
100nA
10nA
1.0nA
100pA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDH06SG60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
6

7. Comparison Graph
Circuit Simulation result
10
Measurement
Simulation
1
Reverse Current, IR (uA)
0.1
0.01
0.001
0.0001
100 200 300 400 500 600
Reverse Voltage , VR (V)
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
100 7.05E-04 7.03E-04 -0.27
200 1.15E-03 1.12E-03 -2.42
400 1.33E-02 1.39E-02 4.30
600 4.50E-01 4.50E-01 -0.02
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
7

8. Junction Capacitance Characteristic
Circuit Simulation result
175p
150p
100p
50p
0
100mV 1.0V 10V 100V 600V
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600 IDH06SG60C
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
8

9. Comparison Graph
Circuit Simulation result
175
Measurement
150 Simulation
125
Capacitance, C (pF)
100
75
50
25
0
0.1 1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.1 168.00 169.35 0.80
0.2 165.00 165.39 0.24
0.5 153.00 153.82 0.54
1 138.00 139.17 0.85
2 120.00 120.01 0.01
5 92.00 91.87 -0.14
10 72.00 71.75 -0.34
20 54.50 54.74 0.44
50 37.30 37.60 0.81
100 27.80 28.06 0.93
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
9