SPICE MODEL of TLP281 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS : PHOTOCOUPLER
PART NUMBER : TLP281
MANUFACTURER : TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Corporation 2008

2. DIODE MODEL
Pspice model Model description
Parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
BIPOLAR JUNCTION TRANSISTOR MODEL
Pspice Model description
model
parameter
NR Reverse Emission Coefficient
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
CJC Zero-bias Collector-Base Junction Capacitance
TF Forward Transit Time
TR Reverse Transit Time
VOLTAGE CONTROLLED VOLTAGE SOURCE MODEL(VCVS)
E<Name><(+)Node><(－)Node>VALUE={Expression}
E<Name><(+)Node><(－)Node>TABLE={Expression}
VOLTAGE CONTROLLED CURRENT SOURCE MODEL(VCCS)
E<Name><(+)Node><(－)Node>VALUE={Expression}
All Rights Reserved Copyright (C) Bee Technologies Corporation 2008

3. CURRENT CONTROLLED MODEL(W)
Pspice Model description
model
parameter
IOFF Controlling current to Off state
ION Controlling current to On state
ROFF Off Resistance
RON On Resistance
All Rights Reserved Copyright (C) Bee Technologies Corporation 2008

4. LED IV Curve Characteristics
Simulation result
100mA
10mA
1.0mA
100uA
0.6V 0.8V 1.0V 1.2V 1.4V 1.6V
I(I1)
V(U1:A)
Evaluation Circuit
U1
V1
I1 5V dc
50 mAd c
TL P28 1
0 0
All Rights Reserved Copyright (C) Bee Technologies Corporation 2008

5. Comparison Graph
100
Measurement
Simulation
10
Ifwd (mA)
1
0.1
0.6 0.8 1 1.2 1.4 1.6
VF (V)
Comparison Table
Vfwd(V)
Ifwd (mA) % Error
Measurement Simulation
0.100 0.955 0.956 0.052
0.200 0.980 0.982 0.204
0.500 1.020 1.019 -0.137
1.000 1.048 1.046 -0.153
2.000 1.079 1.075 -0.408
5.000 1.115 1.116 0.072
10.000 1.145 1.151 0.524
20.000 1.198 1.196 -0.192
50.000 1.285 1.285 0.008
100.000 1.400 1.400 0.007
All Rights Reserved Copyright (C) Bee Technologies Corporation 2008

6. Transistor Saturation Characteristics
Simulation result
400mV
200mV
0V
0s 5ms 10ms 15ms 20ms
V(U1:C)
Time
Evaluation Circuit
V2 V1
0V dc 0V dc
U1
I1 I2
8m 2.4 mAdc
TL P28 1
0 0
Comparison Table
Measurement Simulation % Error
VCE(sat) (V) 0.4 (Max) 0.151 -
All Rights Reserved Copyright (C) Bee Technologies Corporation 2008

7. CTR(Current Transfer Ratio) Characteristics
Simulation result
1.00K
0.50K
0.01K
100uA 1.0mA 10mA 100mA
(I(V1)/I(V2))*100
I_I1
Evaluation Circuit
V2 V1
0V dc 0V dc
U1
V3
I1 5
5m
TL P28 1
0 0
All Rights Reserved Copyright (C) Bee Technologies Corporation 2008

8. Rise Curve Table
IO/IF
If (mA) % Error
Measurement Simulation
0.200 63.000 63.333 0.529
0.500 135.000 137.570 1.904
1.000 200.000 192.709 -3.646
2.000 260.000 247.500 -4.808
5.000 330.000 321.257 -2.649
7.000 340.000 346.793 1.998
Fall Curve Table
IO/IF
If(mA) % Error
Measurement Simulation
7.000 340.000 346.793 1.998
10.000 305.000 290.632 -4.711
20.000 193.000 201.031 4.161
50.000 86.000 82.046 -4.598
All Rights Reserved Copyright (C) Bee Technologies Corporation 2008

9. Switching Time Characteristics
Simulation result
1 2
16mA
5.0V
>>
0V 0A
5us 20us 40us 60us 80us 100us 120us 140us
1 V(U1:C) 2 I(V2)
Time
Evaluation Circuit
V2 R1
1.9 k
0V dc
U1
I1 = 0
I2 = 16 m I1 V1
TD = 1 0u 5
TF = 10n
TR = 1 0n
TL P28 1
PW = 5 0u
PE R = 20 0u
0 0
Comparison Table
IF=16mA, RL=1.9k Measurement Simulation % Error
tS (us) 25.000 25.012 0.048
tOFF (us) 40.000 40.056 0.140
All Rights Reserved Copyright (C) Bee Technologies Corporation 2008