SPICE MODEL of GT10Q301 (Professional+FWDP LTspice Model) in SPICE PARK

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SPICE MODEL of GT10Q301 (Professional+FWDP LTspice Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of GT10Q301 (Professional+FWDP LTspice Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Insulated Gate Bipolar Transistor (IGBT)PART NUMBER: GT10Q301MANUFACTURER: TOSHIBA*REMARK: Free-Wheeling Diode Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
  2. 2. Circuit Configuration All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
  3. 3. Transfer CharacteristicsCircuit Simulation resultEvaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
  4. 4. Comparison GraphSimulation result 20 Measurement Simulation 16 COLLECTOR CURRENT, IC, (A) 12 8 4 0 0.0 4.0 8.0 12.0 16.0 20.0 GATE-EMITTER VOLTAGE, VGE, (V)Comparison tableTest condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 0.5 7.350 7.684 4.55 1 7.800 7.978 2.28 2 8.300 8.404 1.25 4 8.950 9.027 0.86 8 9.900 9.953 0.54 12 10.650 10.699 0.46 16 11.350 11.372 0.19 20 12.050 12.058 0.07 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
  5. 5. Fall Time CharacteristicsCircuit Simulation result TimeEvaluation circuitTest condition: IC=10 (A), VCC=600 (V), VGE= ±15 (V), RG=75(Ω) Parameter Unit Measurement Simulation %Error tf us 0.160 0.155 -3.373 toff us 0.500 0.501 0.270 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
  6. 6. Gate Charge CharacteristicsCircuit Simulation resultEvaluation circuitTest condition: VCC=600 (V), IC=10 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 13.000 12.522 -3.677 Qgc nc 50.000 48.000 -4.000 Qg nc 82.000 85.063 3.735 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
  7. 7. Saturation CharacteristicsCircuit Simulation resultEvaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
  8. 8. Comparison GraphSimulation resultComparison tableTest condition: VGE =15 (V) VCE (V) Ic(A) %Error Measurement Simulation 1 1.080 1.036 -4.12 2 1.230 1.197 -2.66 4 1.480 1.474 -0.39 8 1.900 1.925 1.32 12 2.300 2.297 -0.15 16 2.650 2.640 -0.38 20 3.000 3.005 0.17 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
  9. 9. Output CharacteristicsCircuit Simulation result 15 13 12V 20 V V V VGE=10VEvaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9
  10. 10. FWD Forward Current CharacteristicsCircuit Simulation resultEvaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 10
  11. 11. Comparison GraphSimulation resultComparison table VF (V) IF(A) %Error Measurement Simulation 0.5 0.900 0.932 3.55 1 1.100 1.117 1.50 2 1.350 1.347 -0.21 4 1.650 1.643 -0.41 8 2.080 2.059 -1.03 12 2.430 2.399 -1.28 16 2.700 2.709 0.32 19.3 2.930 2.951 0.72 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 11
  12. 12. Reverse Recovery CharacteristicsCircuit Simulation result TimeEvaluation circuitTest condition: VCC=600 (V), IF=10 (A) –di/dt=200 A/usec Parameter Unit Measurement Simulation %Error trr ns 140.000 146.578 4.699 Irr A 7.000 6.683 -4.53 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 12

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