SPICE MODEL of GT20J321 (Professional+FWDP LTspice Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: GT20J321
MANUFACTURER: TOSHIBA
*REMARK: Free-Wheeling Diode Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1

2. Circuit Configuration
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2

3. Transfer Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
3

4. Comparison Graph
Simulation result
Comparison table
Test condition: VCE =5 (V)
VGE (V)
IC (A) %Error
Measurement Simulation
1 6.300 6.355 0.87
2 6.600 6.551 -0.75
5 7.000 6.953 -0.68
10 7.450 7.427 -0.31
20 8.100 8.138 0.47
30 8.650 8.716 0.76
40 9.200 9.226 0.28
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
4

5. Fall Time Characteristics
Circuit Simulation result
Time
Evaluation circuit
Test condition: IC=20 (A), VCC=300 (V), VGE=15 (V), RG=33(Ω)
Parameter Unit Measurement Simulation %Error
tf us 0.040 0.040 -0.497
tdoff us 0.240 0.245 2.266
toff us 0.340 0.348 2.429
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
5

6. Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VCC=300 (V), IC=20 (A), VGE=15 (V)
Parameter Unit Measurement Simulation %Error
Qge nc 22.000 21.585 -1.886
Qgc nc 38.000 37.248 -1.979
Qg nc 105.000 106.556 1.482
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
6

7. Saturation Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
7

8. Comparison Graph
Simulation result
Comparison table
Test condition: VGE =15 (V)
VCE (V)
Ic(A) %Error
Measurement Simulation
1 0.950 0.997 4.99
2 1.050 1.086 3.38
5 1.300 1.301 0.10
10 1.600 1.597 -0.18
20 2.050 2.053 0.14
30 2.400 2.398 -0.07
40 2.700 2.700 0.01
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
8

9. Output Characteristics
Circuit Simulation result
20V 15V 9V
8V
VGE=7V
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
9

10. FWD Forward Current Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
10

11. Comparison Graph
Simulation result
Comparison table
VF (V)
IF(A) %Error
Measurement Simulation
1 0.850 0.850 0.00
2 0.950 0.947 -0.29
5 1.110 1.115 0.47
10 1.300 1.298 -0.14
20 1.560 1.562 0.12
30 1.780 1.774 -0.33
40 1.960 1.963 0.17
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
11

12. Reverse Recovery Characteristics
Circuit Simulation result
Time
Evaluation circuit
Test condition: VCC=300 (V), IF=20 (A) –di/dt=100 A/usec
Parameter Unit Measurement Simulation %Error
trr ns 110.000 107.642 -2.144
Irr A 4.300 4.308 0.180
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
12