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Device Modeling Report



COMPONENTS:
DIODE/ SCHOOTTKY RECTIFIER /STANDARD
PART NUMBER: HN2S01FU
MANUFACTURER: TOSHIBA




                Bee Technologies Inc.




   All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
PSpice model
                                   Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




          All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic


Circuit Simulation Result




Evaluation Circuit

                R1


                 0.01m

         V1
  0Vdc


                 U1
              HN2S01FU


                     0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                              Vfwd(V)           Vfwd(V)
            Ifwd(A)                                                %Error
                            Measurement        Simulation
                0.0001             0.200             0.198                -1.25
                0.0002             0.213             0.212                -0.28
                0.0005             0.235             0.236                 0.51
                 0.001             0.255             0.254                -0.35
                 0.002             0.273             0.272                -0.37
                 0.005             0.294             0.296                 0.61
                   0.01            0.312             0.314                 0.64
                   0.02            0.330             0.332                 0.70
                   0.05            0.355             0.357                 0.62
                    0.1            0.379             0.377                -0.50




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Junction Capacitance Characteristic


Circuit Simulation Result




Evaluation Circuit

                      V2


                           0Vdc

    V2 = 10      V1
    V1 = 0
    TD = 0
    TR = 1u
    TF = 10ns
    PW = 20us    U1 HN2S01FU
    PER = 50us


                           0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                               Cj(pF)            Cj(pF)
            Vrev(V)                                                 %Error
                            Measurement        Simulation
                    0.02          18.700            18.600                -0.53
                    0.05          18.200            18.100                -0.55
                     0.1          17.411            17.400                -0.06
                     0.2          16.205            16.200                -0.03
                     0.5          13.808            13.800                -0.06
                       1          11.620            11.600                -0.17
                       2           9.470             9.400                -0.74
                       5           7.000             6.900                -1.43
                      10           5.500             5.400                -1.82




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

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Device modeling report Schottky diode

  • 1. Device Modeling Report COMPONENTS: DIODE/ SCHOOTTKY RECTIFIER /STANDARD PART NUMBER: HN2S01FU MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 3. Forward Current Characteristic Circuit Simulation Result Evaluation Circuit R1 0.01m V1 0Vdc U1 HN2S01FU 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 4. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.0001 0.200 0.198 -1.25 0.0002 0.213 0.212 -0.28 0.0005 0.235 0.236 0.51 0.001 0.255 0.254 -0.35 0.002 0.273 0.272 -0.37 0.005 0.294 0.296 0.61 0.01 0.312 0.314 0.64 0.02 0.330 0.332 0.70 0.05 0.355 0.357 0.62 0.1 0.379 0.377 -0.50 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 5. Junction Capacitance Characteristic Circuit Simulation Result Evaluation Circuit V2 0Vdc V2 = 10 V1 V1 = 0 TD = 0 TR = 1u TF = 10ns PW = 20us U1 HN2S01FU PER = 50us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 6. Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0.02 18.700 18.600 -0.53 0.05 18.200 18.100 -0.55 0.1 17.411 17.400 -0.06 0.2 16.205 16.200 -0.03 0.5 13.808 13.800 -0.06 1 11.620 11.600 -0.17 2 9.470 9.400 -0.74 5 7.000 6.900 -1.43 10 5.500 5.400 -1.82 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004