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Device Modeling Report




COMPONENTS: DIODE/ GENERAL PURPOSE
RECTIFIER/ STANDARD MODEL
PART NUMBER: CUS521
MANUFACTURER: TOSHIBA




                Bee Technologies Inc.




   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                  1
Circuit Configuration


           D1
           CUS521




DIODE MODEL PARAMETERS
   PSpice
    model                                Model description
  parameter
      IS         Saturation Current
      N          Emission Coefficient
      RS         Series Resistance
     IKF         High-injection Knee Current
     CJO         Zero-bias Junction Capacitance
      M          Junction Grading Coefficient
      VJ         Junction Potential
     ISR         Recombination Current Saturation Value
      BV         Reverse Breakdown Voltage(a positive value)
     IBV         Reverse Breakdown Current(a positive value)
      TT         Transit Time
     EG          Energy-band Gap




              All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                             2
Forward Current Characteristics

Circuit Simulation result



                1.0A



               100mA



                10mA



               1.0mA



               100uA



                10uA



               1.0uA
                       0V           100mV        200mV    300mV   400mV      500mV   600mV
                            I(R1)
                                                          V_V1




Evaluation circuit

                                                     R1

                                                     0.001m

                                            V1                      D1
                                                                    CUS521




                                        0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                             3
Comparison Graph

Circuit Simulation result




Comparison table


                                             VF (V)
              IF (mA)                                                       %Error
                                Measurement           Simulation
                        0.1              0.152                 0.150              -1.16
                        0.2              0.168                 0.169              0.24
                        0.5              0.190                 0.193              1.78
                            1            0.211                 0.211              0.14
                            2            0.231                 0.231              -0.25
                            5            0.261                 0.257              -1.38
                        10               0.279                 0.278              -0.16
                        20               0.306                 0.302              -1.14
                        50               0.343                 0.343              0.06
                      100                0.379                 0.389              2.76
                      200                0.467                 0.463              -0.98


                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                          4
Junction Capacitance Characteristic

Circuit Simulation result



               100p




                10p




               1.0p
                      0V          5V       10V        15V      20V            25V   30V
                           I(V2)/(30V/100ns)
                                                      V(R)




Evaluation circuit


                                                 V2
                                            R

                                                 0V

                               V1 = 0       V1
                               V2 = 30                               D1
                               TD = 0                                CUS521
                               TR = 100ns
                               TF = 100ns
                               PW = 100us
                               PER = 10ms



                                            0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                          5
Comparison Graph

Circuit Simulation result




Comparison table


                                             C (pF)
              VR (V)                                                        %Error
                                Measurement           Simulation
                       0.2             23.200                23.334               0.58
                       0.5             19.600                19.403               -1.01
                            1          15.600                15.554               -0.29
                            2          11.500                11.665               1.43
                            5            7.250                 7.389              1.92
                       10                4.850                 5.046              4.04
                       20                3.500                 3.392              -3.08




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                          6

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CUS521 diode modeling report

  • 1. Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD MODEL PART NUMBER: CUS521 MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
  • 2. Circuit Configuration D1 CUS521 DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
  • 3. Forward Current Characteristics Circuit Simulation result 1.0A 100mA 10mA 1.0mA 100uA 10uA 1.0uA 0V 100mV 200mV 300mV 400mV 500mV 600mV I(R1) V_V1 Evaluation circuit R1 0.001m V1 D1 CUS521 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
  • 4. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (mA) %Error Measurement Simulation 0.1 0.152 0.150 -1.16 0.2 0.168 0.169 0.24 0.5 0.190 0.193 1.78 1 0.211 0.211 0.14 2 0.231 0.231 -0.25 5 0.261 0.257 -1.38 10 0.279 0.278 -0.16 20 0.306 0.302 -1.14 50 0.343 0.343 0.06 100 0.379 0.389 2.76 200 0.467 0.463 -0.98 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
  • 5. Junction Capacitance Characteristic Circuit Simulation result 100p 10p 1.0p 0V 5V 10V 15V 20V 25V 30V I(V2)/(30V/100ns) V(R) Evaluation circuit V2 R 0V V1 = 0 V1 V2 = 30 D1 TD = 0 CUS521 TR = 100ns TF = 100ns PW = 100us PER = 10ms 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
  • 6. Comparison Graph Circuit Simulation result Comparison table C (pF) VR (V) %Error Measurement Simulation 0.2 23.200 23.334 0.58 0.5 19.600 19.403 -1.01 1 15.600 15.554 -0.29 2 11.500 11.665 1.43 5 7.250 7.389 1.92 10 4.850 5.046 4.04 20 3.500 3.392 -3.08 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6