This document summarizes the key parameters and test results of a Darlington transistor model. It includes the component name, manufacturer, and model number. Tables list the parameters for the bipolar junction transistor and diode models in the simulation. Graphs show simulations that match measurements of hFE, Vce(sat), and output characteristics to within 5% error. Circuit diagrams display the test configurations.

1. Device Modeling Report
COMPONENTS: DARLINGTON TRANSISTOR
PART NUMBER: 2SD985
MANUFACTURER: NEC CORPORATION
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

2. BIPOLAR JUNCTION TRANSISTOR MODEL
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
TF Forward Transit Time
TR Reverse Transit Time
XTB Forward Beta Temperature Coefficient
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

3. DIODE MODEL
PSpice model
Model description
parameter
IS Saturation Current
RS Series Resistance
CJO Zero-bias Junction Capacitance
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

4. Ic-hFE Characteristics
Simulation result
Evaluation Circuit
V2
Simulation
0Vdc
U1
2(C)
V3
3(B)
V1
0Vdc 2Vdc
R1 R2
Q2SD985 1(E)
I1
0.15Adc
0
Peak of hFE Measurement Simulation % Error
IC(A) 1 1.0489 -4.89
hFE 10 k 10.489 k -4.89
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

5. Vce(sat) Voltage & Vbe(sat) Voltage Characteristics
Simulation result
Vbe(sat) Voltage/Simulation
Vce(sat) Voltage/Simulation
Evaluation Circuit
U1 2(C)
3(B)
R1 R2
Q2SD985 1(E)
I2
I1 1Adc
1mAdc
0
Measurement Simulation % Error
Vce(sat) 0.8 V 0.798 V 0.250
Vbe(sat) 1.25 V 1.23 V 1.6
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

6. Output Characteristics
Simulation result
Ib=200u
Ib=180u Ib=160u
u
u u
Ib=140u
u
Ib=120u
u
Ib=100u
Evaluation Circuit
U2 2(C)
3(B)
V1
5Vdc
R1 R2
Q2SD985 1(E)
I1
220uAdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004