SPICE MODEL of TPCP8405 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
1
COMPONENTS: Power MOSFET (Professional Model)
PART NUMBER: TPCP8405
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
3
0
5
10
15
20
25
30
0.0 5.0 10.0 15.0 20.0
Gfs(S)
Drain Current ID (-A)
Measurement
Simulation
Transconductance Characteristics P-Channel
Circuit Simulation Result
Comparison table
-Id(A)
gfs(S)
%Error
Measurement Simulation
0.5 4.750 4.651 -2.08
1 6.670 6.563 -1.60
2 9.330 9.253 -0.82
5 14.500 14.543 0.30
10 20.330 20.429 0.49
20 27.800 28.599 2.87

4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
4
V2
-10
V1
0
0
V3
0Vdc
U1
TPCP8405
V_V1
0V -1.0V -2.0V -3.0V -4.0V -5.0V -6.0V
I(V3)
0A
-4A
-8A
-12A
-16A
-20A
Vgs-Id Characteristics P-Channel
Circuit Simulation result
Evaluation circuit

5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
5
0
4
8
12
16
20
0.0 1.0 2.0 3.0 4.0 5.0 6.0
DrainCurrentID(-A)
Gate - Source Voltage VGS (-V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
-ID(A)
-VGS(V)
%Error
Measurement Simulation
0.5 1.850 1.817 -1.78
1 1.940 1.906 -1.74
2 2.060 2.033 -1.33
5 2.280 2.285 0.21
10 2.575 2.571 -0.17
20 3.040 2.978 -2.03

6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
6
0
U1
TPCP8405
V3
0Vdc
VDS
0Vdc
V1
-10
V_VDS
0V -12mV -24mV -36mV -48mV -60mV -72mV
I(V3)
0A
-0.5A
-1.0A
-1.5A
-2.0A
-2.5A
-3.0A
Rds(on) Characteristics P-Channel
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -3A, VGS= -10V Measurement Simulation %Error
RDS (on) mΩ 24.000 24.000 0.00

7. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
7
Time*1mA
0 5n 10n 15n 20n 25n 30n
V(W1:4)
0V
-3V
-6V
-9V
-12V
-15V
-18V
VDD
-24
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n
-
+
W1
ION = 0uA
IOFF = 1mA
W
I2
6
0
D2
Dbreak
U1
TPCP8405
Gate Charge Characteristics P-Channel
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD= -24V,ID=-6A
,VGS= -10V
Measurement Simulation %Error
Qgs nC 3.300 3.294 -0.18
Qgd nC 5.600 5.632 0.58
Qg nC 24.100 24.074 -0.11

8. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
8
Capacitance Characteristics P-Channel
Simulation Result
-VDS(V)
Cbd(pF)
%Error
Measurement Simulation
0.1 150.000 152.000 1.33
0.2 136.000 138.000 1.47
0.5 108.000 110.000 1.85
1 89.000 89.500 0.56
2 70.000 70.500 0.71
5 49.000 49.500 1.02
10 38.000 38.500 1.32
20 29.000 29.200 0.69
30 25.000 24.700 -1.20
Simulation
Measurement

9. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
9
Time
0.94us 0.96us 0.98us 1.00us 1.02us 1.04us 1.06us
V(U1:G) V(U1:D)/1.5
0V
-2V
-4V
-6V
-8V
-10V
-12V
-14V
Switching Time Characteristics P-Channel
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -3A, VDD= -15V
VGS=0/-10V
Measurement Simulation %Error
ton ns 13.600 13.634 0.25
0
VDD
-15Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 20
U1
TPCP8405
L2
50nH
R2
4.7
R1 4.7
L1
30nH
RL
5

10. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
10
V2
-10
V1
0
0
V3
0Vdc
U1
TPCP8405
V_V2
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
0A
-4A
-8A
-12A
-16A
-20A
Output Characteristics P-Channel
Circuit Simulation result
Evaluation circuit
VGS= -2.3
-2.4
-3
-2.5
-2.6
-2.7
-2.8
-2.9
-10 -3.2
-3.5
-4.5

11. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
11
VDS
0
U1
TPCP8405
Vsense
0Vdc
V_VDS
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(Vsense)
100mA
1.0A
10A
100A
BODY DIODE SPICE MODEL
Forward Current Characteristics P-Channel
Circuit Simulation Result
Evaluation Circuit

12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
12
0.1
1.0
10.0
100.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
DrainreversecurrentIDR(A)
Drain - Source voltage VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VDS (V)
%Error
Measurement Simulation
0.1 0.665 0.660 -0.71
0.2 0.680 0.679 -0.16
0.5 0.708 0.708 0.02
1 0.735 0.737 0.33
2 0.780 0.778 -0.28
5 0.860 0.860 -0.02
10 0.965 0.962 -0.28
20 1.135 1.136 0.11

13. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
13
0
R1
50
U1
DPTPCP8405_P
V1
TD = 36ns
TF = 21.5ns
PW = 10us
PER = 100us
V1 = -9.7v
TR = 10ns
V2 = 10.7v
Time
9.6us 9.8us 10.0us 10.2us 10.4us 10.6us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics P-Channel
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 11.000 10.926 -0.67
trb ns 30.400 30.247 -0.50
trr ns 41.400 41.173 -0.55

14. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
14
P-Channel
Reverse Recovery Characteristics Reference
Trj= 11 (ns)
Trb= 30.4 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement

15. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
15
0
8
16
24
32
40
0.0 4.0 8.0 12.0 16.0 20.0
gfs(S)
Drain Current ID (A)
Measurement
Simulation
Transconductance Characteristics N-Channel
Circuit Simulation Result
Comparison table
Id(A)
gfs(S)
%Error
Measurement Simulation
1 10.700 10.327 -3.49
2 14.500 13.990 -3.52
5 21.000 20.405 -2.83
10 27.500 26.535 -3.51
20 34.500 33.690 -2.35

16. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
16
V1
0Vdc
V2
10
0
U1
TPCP8405
V3
0Vdc
V_V1
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
0A
4A
8A
12A
16A
20A
Vgs-Id Characteristics N-Channel
Circuit Simulation result
Evaluation circuit

17. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
17
0
4
8
12
16
20
0 1 2 3 4 5
DrainCurrentID(A)
Gate - Source Voltage VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
ID(A)
VGS(V)
%Error
Measurement Simulation
1 2.750 2.787 1.36
2 2.870 2.869 -0.02
5 3.030 3.043 0.41
10 3.200 3.254 1.70
20 3.500 3.584 2.41

18. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
18
0
VDS
0Vdc
V1
10Vdc
U1
TPCP8405
V3
0Vdc
V_VDS
0V 20mV 40mV 60mV
I(V3)
0A
0.5A
1.0A
1.5A
2.0A
2.5A
3.0A
Rds(on) Characteristics N-Channel
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= 3.3A, VGS= 10V Measurement Simulation %Error
RDS (on) mΩ 20.000 20.000 0.00

19. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
19
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n VDD
24
-
+
W1
ION = 0uA
IOFF = 1mA
W
I2
6.5
0
D2
DbreakU1
TPCP8405
Time*1mA
0 5n 10n 15n 20n 25n 30n
V(W1:3)
0V
3V
6V
9V
12V
15V
18V
Gate Charge Characteristics N-Channel
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD= 24V, ID=6.5A
,VGS= 10V
Measurement Simulation %Error
Qgs nC 3.000 3.021 0.69
Qgd nC 2.300 2.292 -0.36
Qg nC 13.800 13.611 -1.37

20. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
20
Capacitance Characteristics N-Channel
Simulation Result
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
0.100 395.000 396.810 0.46
0.200 380.000 377.960 -0.54
0.500 335.000 334.180 -0.24
1.000 285.000 286.000 0.35
2.000 230.000 230.500 0.22
5.000 160.000 160.400 0.25
10.000 118.000 117.270 -0.62
20.000 86.000 84.130 -2.17
30.000 67.000 68.920 2.87
Simulation
Measurement

21. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
21
Time
0.94us 0.96us 0.98us 1.00us 1.02us 1.04us 1.06us
V(U1:2) V(U1:7)/1.5
0V
2V
4V
6V
8V
10V
12V
14V
Switching Time Characteristics N-Channel
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= 3.3A, VDD= 15V
VGS=0/10V
Measurement Simulation %Error
ton ns 10.800 10.787 -0.12
0
VDD
15Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 20
L2
50nH
R2
4.7
R1
4.7
L1
30nH
U1
TPCP8405
RL
4.5

22. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
22
0
V2
10
V1
0Vdc
U1
TPCP8405
V3
0Vdc
V_V2
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
0A
4A
8A
12A
16A
20A
Output Characteristics N-Channel
Circuit Simulation result
Evaluation circuit
VGS=3V
3.3
3.2
3.5
3.4
3.6
3.1
3.73.8
4
4.5
10

23. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
23
VSD
0
Vsense
0Vdc
U1
TPCP8405
V_VSD
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(Vsense)
100mA
1.0A
10A
100A
BODY DIODE SPICE MODEL
Forward Current Characteristics N-Channel
Circuit Simulation Result
Evaluation Circuit

24. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
24
0.1
1.0
10.0
100.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
DrainreversecurrentIDR(A)
Source - Drain voltage VSD (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VSD (V)
%Error
Measurement Simulation
0.1 0.6500 0.6505 0.08
0.2 0.6750 0.6745 -0.07
0.5 0.7100 0.7093 -0.10
1 0.7400 0.7404 0.06
2 0.7800 0.7804 0.05
5 0.8600 0.8604 0.05
10 0.9600 0.9593 -0.07
20 1.1200 1.1202 0.02

25. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
25
V1
TD = 35ns
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.40v
TR = 10ns
V2 = 10.60v
0
R1
50
U1
DNTPCP8405_P
Time
19.88us 19.96us 20.04us 20.12us 20.20us 20.28us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics N-Channel
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Characteristics Unit Measurement Simulation %Error
trj ns 14.400 14.244 -1.08
trb ns 20.000 20.193 0.97
trr ns 34.400 34.437 0.11

26. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
26
N-Channel
Reverse Recovery Characteristics Reference
Trj= 14.4 (ns)
Trb= 20.00 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement