SPICE MODEL of TPC6012 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: TPC6012
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
3
0
5
10
15
20
25
30
0.0 2.0 4.0 6.0 8.0 10.0
gfs(S)
Drain Current ID (A)
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A)
gfs(S)
%Error
Measurement Simulation
0.5 6.400 6.690 4.53
1 9.200 9.435 2.55
2 13.400 13.280 -0.90
5 21.200 20.797 -1.90
10 30.000 29.091 -3.03

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4
V_V1
0V 1.0V 2.0V 3.0V 4.0V
I(V3)
0A
2A
4A
6A
8A
10A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
V1
0Vdc
V2
10
0
V3
0Vdc
U1
TPC6012

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5
0.00
2.00
4.00
6.00
8.00
10.00
0.0 1.0 2.0 3.0 4.0
DrainCurrentID(A)
Gate - Source Voltage VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
ID(A)
VGS(V)
%Error
Measurement Simulation
0.5 1.330 1.347 1.29
1 1.420 1.409 -0.77
2 1.510 1.497 -0.85
5 1.680 1.673 -0.42
10 1.860 1.873 0.71

6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
6
0
V3
0Vdc
VDS
0VdcV1
4.5
U1
TPC6012
V_VDS
0V 15mV 30mV 45mV 60mV
I(V3)
0A
0.5A
1.0A
1.5A
2.0A
2.5A
3.0A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID = 3A, VGS = 4.5V Measurement Simulation %Error
RDS (on) m 15.000 15.000 0.00

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Time*1mA
0 4n 8n 12n 16n
V(W1:3)
0V
2V
4V
6V
8V
10V
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=16V, ID=6A,
VGS=5V
Measurement Simulation %Error
Qgs nC 1.800 1.773 -1.50
Qgd nC 3.400 3.427 0.79
Qg nC 9.000 8.129 -9.67
VDD
16
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n -
+
W1
ION = 0uA
IOFF = 1mA
W
I2
6
0
D2
Dbreak
U1
TPC6012

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Capacitance Characteristic
Simulation Result
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
0.100 122.000 122.090 0.07
0.200 117.000 117.010 0.01
0.500 105.000 104.700 -0.29
1.000 90.000 90.300 0.33
2.000 73.000 72.870 -0.18
5.000 50.000 49.860 -0.28
10.000 35.000 35.515 1.47
20.000 25.000 24.630 -1.48
Simulation
Measurement

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Time
0.80us 0.88us 0.96us 1.04us 1.12us 1.20us
V(U1:3) V(U1:1)/2
0V
1.0V
2.0V
3.0V
4.0V
5.0V
6.0V
7.0V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=3A, VDD=10V
VGS=0/5V
Measurement Simulation %Error
ton ns 10.000 10.035 0.35
0
VDD
10Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 10
L2
50nH
U1
TPC6012
R2
4.7
R1
4.7
L1
30nH
RL
3.3

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10
V_V2
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
0A
5A
10A
15A
20A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=1.8V
4.5
2
2.2
10
V2
5
V1
0
0
V3
0Vdc
U1
TPC6012
2.6
6
2.4
2.8

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11
V_VSD
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(Vsense)
100mA
1.0A
10A
100A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
VSD
0
Vsense
0Vdc
U1
TPC6012

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12
0.1
1.0
10.0
100.0
0 0.2 0.4 0.6 0.8 1 1.2
DrainreversecurrentIDR(A)
Source - Drain voltage VSD (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VSD(V)
%Error
Measurement Simulation
0.1 0.4950 0.4897 -1.06
0.2 0.5200 0.5225 0.49
0.5 0.5700 0.5720 0.34
1 0.6150 0.6181 0.50
2 0.6750 0.6757 0.10
5 0.7750 0.7734 -0.21
10 0.8750 0.8718 -0.36
20 1.0100 1.0117 0.17

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Time
19.84us 19.92us 20.00us 20.08us 20.16us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 11.200 11.183 -0.15
V1
TD = 0us
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.60v
TR = 10ns
V2 = 10.50v
R1
50
0
U1
TPC6012

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Reverse Recovery Characteristic Reference
Trj=11.20(ns)
Trb=24.80(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement