The document presents a detailed power MOSFET modeling report for the part number 2SK4076 manufactured by NEC, including model parameters, circuit simulation results, and characteristic curves. It covers transconductance, gate charge, capacitance, switching time, and reverse recovery characteristics, all with associated error percentages from measurements and simulations. The findings aim to provide essential insights for engineers working with this specific MOSFET in circuit applications.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: 2SK4076
MANUFACTURER: NEC
Body Diode : (Standard)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
1.000 20.800 20.833 0.16
2.000 27.000 27.027 0.10
5.000 36.800 36.765 -0.09
10.000 45.200 44.843 -0.79
20.000 53.200 52.910 -0.54
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4. Vgs-Id Characteristic
Circuit Simulation result
100A
10A
1.0A
1.0V 2.0V 3.0V 4.0V 5.0V
I(Vsense)
V_VGS
Evaluation circuit
Vsense
U1
2SK4076 VDS
10Vdc
VGS
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Measurement Simulation Error (%)
1.000 3.100 3.131 1.01
2.000 3.170 3.173 0.11
5.000 3.290 3.268 -0.67
10.000 3.420 3.391 -0.84
20.000 3.600 3.597 -0.09
40.000 3.850 3.949 2.58
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

6. Rds(on) Characteristic
Circuit Simulation result
16A
14A
12A
10A
8A
6A
4A
2A
0A
0V 42mV 84mV 126mV 168mV 210mV
I(Vsense)
V_VDS
Evaluation circuit
Vsense
U1
2SK4076 VDS
10Vdc
VGS
10Vdc
0
Simulation Result
ID = 17.5A, VGS = 10V Measurement Simulation Error (%)
R DS (on) m 12 12 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

7. Gate Charge Characteristic
Circuit Simulation result
12V
10V
8V
6V
4V
2V
0V
0 5n 10n 15n 20n 25n
V(W1:2)
Time*1mA
Evaluation circuit
Vsense
I1
U1 D1 35Adc
2SK4076 Dbreak
W1
+
I2
-
W VD
TD = 0 ION = 0A 32Vdc
1m IOFF = 1mA
I1 = 0
0
Simulation Result
VDD=32V, ID=35A,
Measurement Simulation Error (%)
VGS=10V
Qgs nC 5.00 4.96 -0.80
Qgd nC 7.00 6.96 -0.57
Qg nC 24.00 18.71 -22.04
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd (pF)
VDS (V) Error(%)
Measurement Simulation
0.10 236.00 235.00 0.43
0.20 220.00 225.00 -2.22
0.50 190.00 191.00 -0.52
1.00 158.00 160.00 -1.25
2.00 130.00 128.00 1.56
5.00 90.00 92.00 -2.17
10.00 70.00 71.00 -1.41
20.00 52.00 53.00 -1.89
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

9. Switching Time Characteristic
Circuit Simulation result
12V
10V
8V
6V
4V
2V
0V
-2V
4.94us 4.98us 5.02us 5.06us 5.10us
V(2) V(3)/2
Time
Evaluation circuit
Vsense L2
3
50nH
R1
L3 RL
2 U1 1.14
2SK4076
10 30nH
V1 = 0
V2 = 20 V1 R2
TD = 5u 10 VDD
TR = 10n 20Vdc
TF = 10n
PW = 10u
PER = 10m
0 0 0 0
Simulation Result
ID=17.5A, VDD=20V
Measurement Simulation Error(%)
VGS=0/10V
td(on) ns 13.00 12.98 -0.15
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

10. Output Characteristic
Circuit Simulation result
60A
VGS=10V
4.5V
40A
20A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V
I(Vsense)
V_VDS
Evaluation circuit
Vsense
U1
2SK4076
VDS
10Vdc
VGS
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

11. Forward Current Characteristic
Circuit Simulation Result
1.0KA
100A
10A
1.0A
100mA
0V 0.5V 1.0V 1.5V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc 2SK4076
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VSD(V)
IDR(A) %Error
Measurement Simulation
0.100 0.650 0.649 -0.17
0.200 0.670 0.671 0.13
0.500 0.700 0.700 0.00
1.000 0.723 0.724 0.18
2.000 0.750 0.750 0.05
5.000 0.795 0.791 -0.50
10.000 0.840 0.835 -0.58
20.000 0.900 0.900 0.00
50.000 1.050 1.058 0.76
100.000 1.300 1.296 -0.29
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

13. Reverse Recovery Characteristics (Body Diode)
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
9.88us 9.96us 10.04us 10.12us 10.20us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4V V1
V2 = 10.6V
TD = 30n
TR = 10ns U1
TF = 10ns 2SK4076
PW = 10us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 12.00 11.95 -0.42
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

14. Reverse Recovery Characteristic Reference
Measurement
Trj=12.00(ns)
Trb=26.40(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008