SPICE MODEL of 2SK4076 (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of 2SK4076 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SK4076 (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Model Parameters) PART NUMBER: 2SK4076 MANUFACTURER: NEC Body Diode : (Standard) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 3. Transconductance Characteristic Circuit Simulation Result Comparison table gfs Id(A) Error(%) Measurement Simulation 1.000 20.800 20.833 0.16 2.000 27.000 27.027 0.10 5.000 36.800 36.765 -0.09 10.000 45.200 44.843 -0.79 20.000 53.200 52.910 -0.54 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 4. Vgs-Id Characteristic Circuit Simulation result 100A 10A 1.0A 1.0V 2.0V 3.0V 4.0V 5.0V I(Vsense) V_VGS Evaluation circuit Vsense U1 2SK4076 VDS 10Vdc VGS 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 5. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Measurement Simulation Error (%) 1.000 3.100 3.131 1.01 2.000 3.170 3.173 0.11 5.000 3.290 3.268 -0.67 10.000 3.420 3.391 -0.84 20.000 3.600 3.597 -0.09 40.000 3.850 3.949 2.58 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 6. Rds(on) Characteristic Circuit Simulation result 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 42mV 84mV 126mV 168mV 210mV I(Vsense) V_VDS Evaluation circuit Vsense U1 2SK4076 VDS 10Vdc VGS 10Vdc 0 Simulation Result ID = 17.5A, VGS = 10V Measurement Simulation Error (%) R DS (on) m 12 12 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 7. Gate Charge Characteristic Circuit Simulation result 12V 10V 8V 6V 4V 2V 0V 0 5n 10n 15n 20n 25n V(W1:2) Time*1mA Evaluation circuit Vsense I1 U1 D1 35Adc 2SK4076 Dbreak W1 + I2 - W VD TD = 0 ION = 0A 32Vdc 1m IOFF = 1mA I1 = 0 0 Simulation Result VDD=32V, ID=35A, Measurement Simulation Error (%) VGS=10V Qgs nC 5.00 4.96 -0.80 Qgd nC 7.00 6.96 -0.57 Qg nC 24.00 18.71 -22.04 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd (pF) VDS (V) Error(%) Measurement Simulation 0.10 236.00 235.00 0.43 0.20 220.00 225.00 -2.22 0.50 190.00 191.00 -0.52 1.00 158.00 160.00 -1.25 2.00 130.00 128.00 1.56 5.00 90.00 92.00 -2.17 10.00 70.00 71.00 -1.41 20.00 52.00 53.00 -1.89 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 9. Switching Time Characteristic Circuit Simulation result 12V 10V 8V 6V 4V 2V 0V -2V 4.94us 4.98us 5.02us 5.06us 5.10us V(2) V(3)/2 Time Evaluation circuit Vsense L2 3 50nH R1 L3 RL 2 U1 1.14 2SK4076 10 30nH V1 = 0 V2 = 20 V1 R2 TD = 5u 10 VDD TR = 10n 20Vdc TF = 10n PW = 10u PER = 10m 0 0 0 0 Simulation Result ID=17.5A, VDD=20V Measurement Simulation Error(%) VGS=0/10V td(on) ns 13.00 12.98 -0.15 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 10. Output Characteristic Circuit Simulation result 60A VGS=10V 4.5V 40A 20A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V I(Vsense) V_VDS Evaluation circuit Vsense U1 2SK4076 VDS 10Vdc VGS 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 11. Forward Current Characteristic Circuit Simulation Result 1.0KA 100A 10A 1.0A 100mA 0V 0.5V 1.0V 1.5V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc 2SK4076 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 12. Comparison Graph Circuit Simulation Result Simulation Result VSD(V) IDR(A) %Error Measurement Simulation 0.100 0.650 0.649 -0.17 0.200 0.670 0.671 0.13 0.500 0.700 0.700 0.00 1.000 0.723 0.724 0.18 2.000 0.750 0.750 0.05 5.000 0.795 0.791 -0.50 10.000 0.840 0.835 -0.58 20.000 0.900 0.900 0.00 50.000 1.050 1.058 0.76 100.000 1.300 1.296 -0.29 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 13. Reverse Recovery Characteristics (Body Diode) Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 9.88us 9.96us 10.04us 10.12us 10.20us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4V V1 V2 = 10.6V TD = 30n TR = 10ns U1 TF = 10ns 2SK4076 PW = 10us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 12.00 11.95 -0.42 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 14. Reverse Recovery Characteristic Reference Measurement Trj=12.00(ns) Trb=26.40(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008