The document is a detailed device modeling report for a MOSFET (2SK3058) manufactured by NEC, featuring extensive specifications and circuit simulation results for various characteristics including transconductance, Vgs-ID characteristics, and body diode behavior. It includes comparison tables between measured and simulated data, highlighting errors, as well as insights into gate charge and switching times. Copyright information indicates all rights are reserved for Bee Technologies Inc., 2006.

1. Device Modeling Report
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: 2SK3058
MANUFACTURER: NEC Corporation
REMARK: Body Diode (Professional Model) /
ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL PARAMETERS
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristics
Circuit Simulation Result
100
Measurement
Simulation
TRANSCONDUCTANCE Gfs(s)
10
1
0 4 8 12 16 20
DRIAN CURRENT ID (A)
Comparison table
gfs(s)
Id(A) Error(%)
Measurement Simulation
1 13.6986 13.7800 0.5940
2 17.1253 17.0000 -0.7317
5 25.0000 25.1235 0.4942
10 36.0101 36.2158 0.5712
20 60.0000 59.8892 -0.1847
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristics
Circuit Simulation Result
100A
10A
1.0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V
I(V2)
V_VGS
Evaluation circuit
V2
U1 2SK3058
VDD
10Vdc
VGS
0Vdc
0 0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
ID - Drain Current -A
10
1
1 2 3 4
VGS - Gate to Source Voltage - V
Comparison table
VGS(V)
ID(A) Measurement Simulation Error (%)
1 2.1700 2.1786 0.3963
2 2.2800 2.2633 -0.7325
5 2.4500 2.4426 -0.3020
10 2.6500 2.6609 0.4113
20 2.9600 2.9900 1.0135
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. *Rds(on) Characteristic
Circuit Simulation result
28.0A
25.2A
22.4A
19.6A
16.8A
14.0A
11.2A
8.4A
5.6A
2.8A
0A
0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V
I(V2)
V_VDD
Evaluation circuit
V2
U1 2SK3058
VDD
10Vdc
VGS
10Vdc
0 0
0
Simulation Result
ID=28A, VGS=10V Measurement Simulation Error (%)
R DS (on) 12.000 m 12.017 m 0.1416
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
10V
8V
6V
4V
2V
0V
0 10n 20n 30n 40n 50n 60n 70n 80n 90n 100n
V(W1:3)
Time*1.0mA
Evaluation circuit
Vsense
U1 2SK3058
I1
D1
Dbreak 55Adc
W1
+
-
I2 W VD
ION = 0A 48Vdc
IOFF = 1.1mA
0
Simulation Result
VDD=48V,ID=55A
,VGS=10V Measurement Simulation Error (%)
Qgs 7.00 nC 6.69 nC -4.4285
Qgd 18.00 nC 18.73 nC 4.0555
Qg 46.00 nC 44.40 nC -3.4782
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
1 780.000 779.625 -0.048
2 610.000 615.899 0.967
5 420.000 430.794 2.570
10 330.000 321.183 -2.672
20 245.000 237.566 -3.034
50 150.000 158.466 5.644
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
12V
11V
10V
9V
8V
7V
6V
5V
4V
3V
2V
1V
0V
0.8us 1.0us 1.2us 1.4us
V(L3:2) V(3)/3
Time
Evaluation circuit
Vsense RL
3
10
V1 = 0 U1 2SK3058_pro
R1 L3
V2 = 20 2
10
TD = 1u 30nH VD
30Vdc
TR = 10n V1
R2
TF = 10n 10
PW = 10u
PER = 10m
0
Simulation Result
ID=28A, VDD=30V
Measurement Simulation Error(%)
VGS=0/10V
td (on) 36.000 ns 36.012 ns 0.0333
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
100A
90A
VGS=10V
80A
70A
60A
50A VGS= 4.0V
40A
30A
20A
10A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V
I(V2)
V_VDS
Evaluation circuit
V2
U1 2SK3058
VDS
10Vdc
VGS
10Vdc
0 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
10mA
0V 0.5V 1.0V 1.5V 2.0V
I(R1)
V_V1
Evaluation Circuit
V2
VGS
0Vdc
VDS
0Vdc
U1 2SK3058
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
100
Diode Forward Current - A
10
1
0.1
0.01
0 0.5 1 1.5 2
Source to Drain Voltage - V
Simulation Result
VDS(V)
IDR(A) Measurement Simulation %Error
0.1 0.5950 0.5967 0.2857
0.2 0.6220 0.6211 -0.1447
0.5 0.6550 0.6546 -0.0611
1 0.6810 0.6804 -0.0881
2 0.7100 0.7084 -0.2254
5 0.7540 0.7515 -0.3316
10 0.7920 0.7936 0.2020
20 0.8600 0.8570 -0.3488
50 1.0100 1.0000 -0.9901
100 1.2000 1.2144 1.2000
200 1.6200 1.6144 -0.3457
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
14.96us 15.04us 15.12us 15.20us 15.28us 15.36us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.5V
V2 = 10.5 U1 D2SK3058_pro
TD = 50n V1
TR = 10n
TF = 10n
PW = 15us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 32.000 ns 32.021 ns 0.065
trb 51.000 ns 51.210 ns 0.411
trr 83.000 ns 83.321 ns 0.3867
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=32(ns)
Trb=51(ns)
Conditions:Ifwd=0.2,lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(V2)
V_VGS
Evaluation Circuit
U1 2SK3058
V2
ID
0Adc
VGS
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006