SPICE MODEL of TPCA8012-H (Professional+BDSP Model) in SPICE PARK
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SPICE MODEL of TPCA8012-H (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of TPCA8012-H (Professional+BDSP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: TPCA8012-H MANUFACTURER: TOSHIBA Body Diode (Special Model) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 2. Circuit Configuration Equivalent Circuit D S - - + + R3 S2 10MEG DGD R1 CGD 10M S1 + + - - S M1 G S All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 3. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 4. Transconductance Characteristic Circuit Simulation Result 70 Measurement Simulation 60 50 40 gfs 30 20 10 0 0 2 4 6 8 10 ID : Drain Current A Comparison table gfs Id(A) Error(%) Measurement Simulation 0.100 6.061 6.250 3.118 0.200 9.091 9.524 4.763 0.500 14.286 14.286 0.000 1.000 19.582 20.408 4.218 2.000 27.571 27.778 0.751 5.000 42.455 43.860 3.309 10.000 62.667 61.350 -2.102 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 5. Vgs-Id Characteristic Circuit Simulation result 100A 80A 60A 40A 20A 0A 0V 1.0V 2.0V 3.0V 4.0V I(V3) V_V2 Evaluation circuit V3 0Vdc U1 Vv ariable TPCA8012-H 10Vdc 10Vdc V2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 6. Comparison Graph Circuit Simulation Result 100 Measurement Simulation 80 ID : Drain Current A 60 40 20 0 0 1 2 3 4 VGS : Gate to Source Voltage V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 1 2.670 2.676 0.225 2 2.720 2.716 -0.154 5 2.830 2.800 -1.060 10 2.935 2.897 -1.295 20 3.080 3.037 -1.396 30 3.150 3.147 -0.095 50 3.300 3.327 0.818 80 3.500 3.543 1.229 100 3.650 3.670 0.548 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 7. Rds(on) Characteristic Circuit Simulation result 25A 20A 15A 10A 5A 0A 0V 20mV 40mV 60mV 80mV 100mV I(V3) V_VDS Evaluation circuit V3 0Vdc U1 TPCA8012-H VDS 0Vdc 10Vdc VGS 0 Simulation Result ID=20A, VGS=10V Measurement Simulation Error (%) R DS (on) (m) 3.700 3.701 0.027 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 8. Gate Charge Characteristic Circuit Simulation result 16V 12V 8V 4V 0V 0 20n 40n 60n 70n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc U1 TPCA8012-H PER = 100u Dbreak PW = 60u W1 TF = 10n + D1 TR = 10n I2 TD = 0 - 40Adc I2 = 1m W I1 = 0 I1 IOFF = 0.1mA ION = 0uA V1 24Vdc 0 Simulation Result VDD=24V,ID=40A Measurement Simulation Error (%) ,VGS=10V Qgs(nc) 10.000 10.000 10.000 Qgd(nc) 7.000 6.982 7.000 Qg(nc) 40.000 40.036 40.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 1550.000 1560.000 0.645 0.2 1480.000 1480.000 0.000 0.5 1300.000 1305.000 0.385 1 1120.000 1115.000 -0.446 2 890.000 890.000 0.000 5 600.000 610.000 1.667 10 440.000 440.000 0.000 20 310.000 310.000 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 10. Switching Time Characteristic Circuit Simulation result 12V 10V 8V 6V 4V 2V 0V 1.88us 1.92us 1.96us 2.00us 2.04us 2.08us 2.12us 2.16us 2.20us V(2) V(3)/1.5 Time Evaluation circuit 3 L2 50n RL U1 TPCA8012-H 0.75 R3 L1 2 VDD 15Vdc V1 = 0 30nH V2 = 20 V2 4.7 TD = 2u R2 TR = 6n TF = 7n 4.7 PW = 2u PER = 10u 0 Simulation Result ID=20A, VDD=15V Measurement Simulation Error(%) VGS=10V Ton(ns) 14.000 14.023 0.164 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 11. Output Characteristic Circuit Simulation result 100A 10 4 3.8V 4.5 5 80A 6 8 3.6V 60A 40A 3.4V 3.2V 20A VGS=3.0 V 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc U1 TPCA8012-H Vv ariable 10Vdc 0Vdc Vstep 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 12. Forward Current Characteristic Circuit Simulation Result 1.0KA 100A 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U1 DTPCA8012-H 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 13. Comparison Graph Circuit Simulation Result 1000 Measurement Simulation 100 Drain reverse current IDR(A) 10 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 Drain Source voltage VDS(V) Simulation Result VDS(V) VDS(V) IDR(A) %Error Measurement Simulation 0.100 0.600 0.599 -0.167 0.200 0.620 0.619 -0.161 0.500 0.645 0.647 0.310 1.000 0.668 0.668 0.000 2.000 0.690 0.689 -0.145 5.000 0.720 0.721 0.139 10.000 0.750 0.749 -0.133 20.000 0.785 0.786 0.127 50.000 0.860 0.859 -0.116 100.000 0.955 0.957 0.209 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 14. Reverse Recovery Characteristics (Body Diode) Circuit Simulation Result 2.0A 1.5A 1.0A 0.5A 0A -0.5A -1.0A -1.5A -2.0A 1.40us 1.44us 1.48us 1.52us 1.56us 1.60us 1.64us 1.68us 1.72us 1.76us I(R1) Time Evaluation Circuit R1 2 Vsense V1 = -30V PARAMETERS: TF = 0.975u V2 = 30V TD = 18.745n DTPCA8012-H_SP U1 TR = 10ns TF = {TF} V1 VPULSE PW = 1us PER = 20us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trr 78.400 ns 78.581 ns 0.23 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 15. Reverse Recovery Characteristic (Body Diode) Reference Trr=78.40ns Conditions: di/dt=30A/us All Rights Reserved Copyright (c) Bee Technologies Inc. 2007