SPICE MODEL of SSM3J130TU (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Professional Model)
PART NUMBER: SSM3J130TU
MANUFACTURER: TOSHIBA
Body Diode (Professional Model) / ESD Protection Diode

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
3
0
5
10
15
20
25
30
0 2 4 6 8 10
Transconductancegfs(S)
Drain current -ID (A)
Measurement
Simulation
Transconductance Characteristics
Circuit Simulation Result
Comparison table
-Id(A)
gfs(S)
Error (%)
Measurement Simulation
0.1 3.950 4.116 4.21
0.2 5.600 5.725 2.22
0.5 8.500 8.760 3.06
1 11.800 11.955 1.31
2 15.900 16.110 1.32
5 23.600 23.291 -1.31
9 29.500 28.945 -1.88

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V1
0Vdc
V2
-3
0
V3
0Vdc
U1
SSM3J130TU
V_V1
0V -0.2V -0.4V -0.8V -1.2V -1.4V -1.8V
I(V3)
-100mA
-10A
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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0.1
1.0
10.0
0.0 0.5 1.0 1.5
DrainCurrent-ID(A)
Gate−source voltage -VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
-ID(A)
-VGS(V)
Error (%)
Measurement Simulation
0.1 0.710 0.726 2.19
0.2 0.750 0.746 -0.55
0.5 0.800 0.787 -1.59
1 0.840 0.835 -0.55
2 0.905 0.906 0.16
5 1.050 1.058 0.71
9 1.180 1.210 2.55

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6
0
V3
0Vdc
VDS
0Vdc
V1
-4.5
U1
SSM3J130TU
V_VDS
0V -20mV -40mV -60mV -80mV -100mV
I(V3)
0A
-2.0A
-4.0A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -4A, VGS= -4.5V Measurement Simulation Error (%)
RDS (on) mΩ 20.900 20.900 0.00

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Time*1mA
0 10n 20n 30n 40n 50n
V(W1:4)
0V
-2.0V
-4.0V
-6.0V
-8.0V
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD= -10V,ID=-4.4A
,VGS= -4.5V
Measurement Simulation Error (%)
Qgs nC 1.200 1.195 -0.44
Qgd nC 6.800 6.726 -1.09
Qg nC 24.800 25.616 3.29
VDD
-10
I1TD = 0
TF = 1n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 0.5n -
+
W1
ION = 0uA
IOFF = 1mA
W
I2
4.4
0
D2
Dbreak
U1
SSM3J130TU

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Capacitance Characteristics
Simulation Result
VSD(V)
Cbd(pF)
Error (%)
Measurement Simulation
0.1 98.000 95.400 -2.65
0.2 87.000 86.800 -0.23
0.5 70.000 70.300 0.43
1.0 55.000 55.800 1.45
2.0 42.000 42.060 0.14
5.0 28.000 27.460 -1.93
10.0 20.000 19.440 -2.80
20.0 14.000 13.638 -2.59
Simulation
Measurement

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Time
0.84us 0.92us 1.00us 1.08us 1.16us 1.24us
V(U1:G) V(U1:D)/4
1.0V
0V
-1.0V
-2.0V
-3.0V
-4.0V
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -1.5A, VDD= -10V
VGS=0/-2.5V
Measurement Simulation Error (%)
ton ns 25.000 24.852 -0.59
0
VDD
-10Vdc
V2
TD = 1u
TF = 4n
PW = 10u
PER = 1m
V1 = 0
TR = 4n
V2 = 5
L2
50nH
R2
4.7
R1 4.7 L1
30nH
U1
SSM3J130TU
RL
6.64

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10
V2
-1V1
0
0
V3
0Vdc
U1
SSM3J130TU
V_V2
0V -0.2V -0.4V -0.6V -0.8V -1.0V
I(V3)
0A
-2A
-4A
-6A
-8A
-10A
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS= -1.2
-1.8
-1.5
-8
-2.5
-4.5

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VDS
0
Vsense
0Vdc
U1
SSM3J130TU
V_VDS
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(Vsense)
1.0mA
10mA
100mA
1.0A
10A
BODY DIODE SPICE MODEL
Forward Current Characteristics
Circuit Simulation Result
Evaluation Circuit

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0.001
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2
DrainreversecurrentIDR(A)
Drain−source voltage VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VDS (V)
Error (%)
Measurement Simulation
0.001 0.430 0.432 0.53
0.002 0.450 0.450 0.09
0.005 0.475 0.476 0.17
0.01 0.500 0.497 -0.54
0.02 0.525 0.522 -0.51
0.05 0.565 0.562 -0.51
0.1 0.595 0.596 0.14
0.2 0.625 0.631 0.96
0.5 0.680 0.680 -0.07
1 0.720 0.715 -0.65
2 0.765 0.755 -1.37
5 0.840 0.822 -2.16
9 0.910 0.883 -3.00

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V1
TD = 0ns
TF = 10ns
PW = 10us
PER = 100us
V1 = -9.4V
TR = 10ns
V2 = 10.6v
R1
50
0
U1
DSSM3J130TU_P
Time
9.6us 9.7us 9.8us 9.9us 10.1us 10.3us 10.5us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 20.000 20.327 1.64
trb ns 52.000 51.647 -0.68
trr ns 72.000 71.974 -0.04

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Reverse Recovery Characteristics Reference
Trj= 20 (ns)
Trb= 52 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement

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R1
0.001m
V1
0Vdc
0
U1
SSM3J130TU R2
100MEG
V_V1
0V -5V -10V -15V -20V -25V -30V -35V -40V -45V
I(R1)
0A
-1mA
-2mA
-3mA
-4mA
-5mA
-6mA
-7mA
-8mA
-9mA
-10mA
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristics
Circuit Simulation Result
Evaluation Circuit

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16
Zener Voltage Characteristics Reference