SPICE MODEL of SSM6N24TU (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: SSM6N24TU
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

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Transconductance Characteristics
Circuit Simulation result
Comparison table
ID (mA)
gfs (S)
%Error
Measurement Simulation
20 0.528 0.530 0.38
50 0.8403 0.845 0.56
100 1.186 1.199 1.10
200 1.689 1.702 0.77
500 2.723 2.708 -0.55
1000 3.887 3.852 -0.90
1300 4.451 4.406 -1.01
VDS=3V

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V_VGS
0V 1.0V 2.0V 3.0V
I(U1:6)
10mA
100mA
1.0A
10A
VGS
V1
3V
0
Q2
Q1
U1
SSM6N24TU
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Circuit Simulation result
Comparison table
ID (mA)
VGS (V)
%Error
Measurement Simulation
10 0.890 0.901 1.24
20 0.925 0.923 -0.22
50 0.983 0.966 -1.73
100 1.035 1.015 -1.93
200 1.090 1.084 -0.57
500 1.200 1.219 1.58
1000 1.341 1.372 2.31
1300 1.407 1.445 2.70
VDS=3V

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VGS
4.5V
0
VDS
Q2
Q1
U1
SSM6N24TU
V_VDS
0V 10mV 20mV 30mV 40mV 50mV 60mV 70mV
I(U1:6)
0A
50mA
100mA
150mA
200mA
250mA
300mA
350mA
400mA
450mA
500mA
550mA
Rds (on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VGS=4.5(V), ID=0.5(A)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 120.000 120.062 0.05

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V_VDS
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(U1:6)
0A
0.2A
0.4A
0.6A
0.8A
1.0A
1.2A
1.4A
1.6A
VGS
0
VDSQ2
Q1
U1
SSM6N24TU
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS=1.4V
1.8V 1.6V
2V
3V
4V
5V

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Capacitance Characteristics
Simulation result
Comparison table
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
0.1 35.000 35.037 0.11
0.2 33.000 32.900 -0.30
0.5 28.000 28.100 0.36
1 23.000 23.068 0.30
2 18.000 17.648 -1.96
5 11.000 11.290 2.64
10 7.500 7.710 2.80
20 5.400 5.135 -4.91
30 4.000 4.013 0.32
Simulation
Measurement

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Time*10mA
0 2n 4n 6n 8n 10n
V(W1:3)
0V
2V
4V
6V
8V
10V
Q2
Q1
U1
SSM6N24TU
D1
dmod ID
0.25A
VDD
25V
0
-
+
W1
ION = 0
IOFF = 1mA
WIGTD = 0
TF = 10n
PW = 10m
PER = 1
I1 = 0
I2 = 10m
TR = 10n
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=25(V), VGS=4(V), ID=0.25(A)
Parameter Unit Measurement Simulation %Error
Qgs nC 0.440 0.439 -0.23
Qgd nC 1.160 1.165 0.43
Qg nC 3.750 2.580 -31.19

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Time
1.90us 1.95us 2.00us 2.05us 2.10us 2.15us
V(U1:2) V(U1:6)/4
0V
1.0V
2.0V
3.0V
4.0V
5.0V
L1
30nH
1 2
R2
4.7
Q2
Q1
U1
SSM6N24TU
V1TD = 2u
TF = 4n
PW = 5u
PER = 500u
V1 = 0
TR = 4n
V2 = 2.5V VDD
10V
0
RL
40
L2
30nH
12
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=10(V), VGS=0/2.5(V), ID=0.25(A), RG=4.7
Parameter Unit Measurement Simulation %Error
ton ns 9.000 9.036 0.40

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V_VDS
0V -0.2V -0.4V -0.6V -0.8V -1.0V
I(VDS)
0A
0.2A
0.4A
0.6A
0.8A
1.0A
1.2A
1.4A
1.6A
0
VDS
Q2
Q1
U1
SSM6N24TU
Body Diode Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
IDR (mA)
-VDS (V)
%Error
Measurement Simulation
10 0.475 0.478 0.63
20 0.499 0.504 1.00
50 0.539 0.544 0.93
100 0.575 0.579 0.70
200 0.625 0.621 -0.64
500 0.709 0.697 -1.69
1000 0.799 0.789 -1.25
1500 0.859 0.869 1.16

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Time
0.98us 1.00us 1.02us 1.04us 1.06us 1.08us
I(R1)
-200mA
-150mA
-100mA
-50mA
-0mA
50mA
100mA
150mA
200mA
Q2
Q1
U1
SSM6N24TU
0
V1TD = 7ns
TF = 3ns
PW = 1us
PER = 100us
V1 = -4.5V
TR = 3ns
V2 = 5.6V
R1
50
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 5.200 5.171 -0.56

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Reverse Recovery Characteristics Reference
trj = 5.2(ns)
trb = 6.6(ns)
Conditions: Ifwd = lrev = 0.1(A), Rl = 50
Relation between trj and trb
Example
Measurement

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V_VGS
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
-I(VGS)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
VGS
0
R1
1G
Q2
Q1
U1
SSM6N24TU
ESD PROTECTION DIODE
Zener Voltage Characteristics
Circuit Simulation result
Evaluation circuit

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Zener Voltage Characteristics Reference
IZ = 1(mA)
VZ =15.6(V) at IZ=1.07mA
Measurement