This document provides a summary report of the simulation and characterization of a Toshiba MOSFET transistor (TK80K04K3Z) and its internal body diode. It includes the MOSFET model parameters, as well as simulation results and comparisons to measurements for key electrical characteristics such as transconductance, drain current, gate charge, switching times, and reverse recovery behavior. Simulation results show good agreement with measurements across various operating conditions and parameters.