A silicon-controlled rectifier or semiconductor-controlled rectifier is a four-layer solid-state current-controlling device. Some sources define silicon-controlled rectifiers and thyristors as synonymous,[5] other sources define silicon-controlled rectifiers as a proper subset of the set of thyristors. SCRs are mainly used in devices where the control of high power, possibly coupled with high voltage, is demanded. Their operation makes them suitable for use in medium- to high-voltage AC power control applications, such as lamp dimming, power regulators and motor control.
A silicon-controlled rectifier or semiconductor-controlled rectifier is a four-layer solid-state current-controlling device. Some sources define silicon-controlled rectifiers and thyristors as synonymous,[5] other sources define silicon-controlled rectifiers as a proper subset of the set of thyristors. SCRs are mainly used in devices where the control of high power, possibly coupled with high voltage, is demanded. Their operation makes them suitable for use in medium- to high-voltage AC power control applications, such as lamp dimming, power regulators and motor control.
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. http://bit.ly/2PIOIQM
Block diagram of a typical op-amp – characteristics of ideal and practical op-amp - parameters of opamp – inverting and non-inverting amplifier configurations - frequency response - circuit stability.
These slides provide an elementary description of Power Electronics and its application domains. It also shows the different power devices and converters.
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. http://bit.ly/2PIOIQM
Block diagram of a typical op-amp – characteristics of ideal and practical op-amp - parameters of opamp – inverting and non-inverting amplifier configurations - frequency response - circuit stability.
These slides provide an elementary description of Power Electronics and its application domains. It also shows the different power devices and converters.
Silicon Control Rectifier Phase ControlDerrick Tiew
These slides provide brief introduction to the use of silicon control rectifier in phase control circuit, i.e. half-wave as well as full-wave rectifier circuit.
Part of Lecture series on EE321N, Power Electronics-I delivered by me during Fifth Semester of B.Tech. Electrical Engg., 2012
Z H College of Engg. & Technology, Aligarh Muslim University, Aligarh
Please comment and feel free to ask anything related. Thanks!
The complete list of thyristor family members include diac (bidirectional diode thyristor), triac (bidirectional triode thyristor), SCR (silicon controlled rectifier), Shockley diode, SCS (silicon controlled switch), SBS (silicon bilateral switch), SUS (silicon unilateral switch) also known as complementary SCR or CSCR, LASCR (light activated SCR), LAS (light activated switch) and LASCS (light activated SCS).
Part of Lecture series on EE321N, Power Electronics-I delivered by me during Fifth Semester of B.Tech. Electrical Engg., 2012
Z H College of Engg. & Technology, Aligarh Muslim University, Aligarh
Please comment and feel free to ask anything related. Thanks!
Project is designed to develop a FACTs (Flexible AC Transmission) by TSR (Thyristor Switch Reactance) used in two ways. Read more about this project here.
Transister Tester Project Report with Circuit DiagramTeam Kuk
Transistor testers are instruments for testing the electrical behavior of transistors and solid-state diodes circuit. This device is used to detect a faulty transistor, within an assembled PCB. The testing can be carried out on the PCB's components, so that only the faulty transistor needs to be removed and replaced
1. SCR (Silicon controlled rectifier) - Thyristor Presented by: SNEHASHIS PAUL 07/ECE/109 3rd year (E.C.E) Batch-2 Supported by CANNONICAL CORP. Please redistribute Linux OS generously.
5. History The SCR or Thyristor was proposed by William Shockley in 1950 and championed by Moll and others at Bell Labs in 1956. it was fabricated by power engineers at General Electric led by Gordon Hall and commercialized by G.E.'s Frank W. Gutzwiller.
6. Construction The thyristor is a four layer, three terminal semiconducting device, with each layer consisting of alternately N-type or P-type material, for example P-N-P-N. The main terminals, labelled anode and cathode, are across the full four layers and the control terminal, called the gate, is attached to P-type material near to the cathode. The thyristor has three P-N junctions serially named j1,j 2,j 3 from the anode.