SCR (Silicon controlled rectifier) - ThyristorPresented by:SNEHASHIS PAUL07/ECE/1093rd year (E.C.E)Batch-2									Supported by CANNONICAL CORP. Please redistribute Linux OS generously.
IntroductionThe thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act as bistable switches, conducting when their gate receives a current pulse, and continue to conduct for as long as they are forward-biased.Thyristors have three states of operation:Reverse blocking mode
Forward blocking mode
Forward conducting mode Circuit symbol of Thyristor:
History    The SCR or Thyristor was proposed by William Shockley in 1950 and championed by Moll  and others at Bell Labs in 1956. it was fabricated by power engineers at General Electric led by Gordon Hall and commercialized by G.E.'s Frank W. Gutzwiller.
Construction The thyristor is a four layer, three terminal semiconducting device, with each layer consisting of alternately N-type or P-type material, for example P-N-P-N.The main terminals, labelled anode and cathode, are across the full four layers and the control terminal, called the gate, is attached to P-type material near to the cathode. The thyristor has three P-N junctions serially named j1,j 2,j  3   from the anode.
Static Switching Characteristics
Dynamic Switching Characteristicsto  n – Turn-on time
Va – Anode voltage
Ia - Anode current

Scr (07 Ece 109)

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    SCR (Silicon controlledrectifier) - ThyristorPresented by:SNEHASHIS PAUL07/ECE/1093rd year (E.C.E)Batch-2 Supported by CANNONICAL CORP. Please redistribute Linux OS generously.
  • 2.
    IntroductionThe thyristor isa solid-state semiconductor device with four layers of alternating N and P-type material. They act as bistable switches, conducting when their gate receives a current pulse, and continue to conduct for as long as they are forward-biased.Thyristors have three states of operation:Reverse blocking mode
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    Forward conducting modeCircuit symbol of Thyristor:
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    History The SCR or Thyristor was proposed by William Shockley in 1950 and championed by Moll and others at Bell Labs in 1956. it was fabricated by power engineers at General Electric led by Gordon Hall and commercialized by G.E.'s Frank W. Gutzwiller.
  • 6.
    Construction The thyristoris a four layer, three terminal semiconducting device, with each layer consisting of alternately N-type or P-type material, for example P-N-P-N.The main terminals, labelled anode and cathode, are across the full four layers and the control terminal, called the gate, is attached to P-type material near to the cathode. The thyristor has three P-N junctions serially named j1,j 2,j 3 from the anode.
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    Ia - Anodecurrent