SPICE MODEL of S30SC4MT (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / PROFESSIONAL
PART NUMBER: S30SC4MT
MANUFACTURER: SHINDENGEN
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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2. Circuit Configuration
U1
S30SC4MT
1 2 3
Spice Model Parameters
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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3. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.5V 1.0V 1.5V 2.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc S30SC4MT
R2
100MEG
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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4. Comparison Graph
Circuit Simulation Result
100
FORWARD CURRENT:IF(A)
10
1
Measurement
Simulation
0.1
0 0.5 1 1.5 2
FORWARD VOLTAGE：VF(V)
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.1 0.2600 0.2562 -1.46
0.2 0.2800 0.2748 -1.86
0.5 0.3000 0.3009 0.28
1 0.3200 0.3221 0.67
2 0.3500 0.3469 -0.87
5 0.3950 0.3913 -0.93
10 0.4400 0.4435 0.81
20 0.5200 0.5300 1.92
50 0.7500 0.7583 1.11
100 1.1300 1.1140 -1.42
150 1.4500 1.4588 0.61
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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5. Capacitance Characteristic
Circuit Simulation Result
5.0n
1.0n
100p
10p
100mV 1.0V 10V 40V
I(V2)/(40V/100n)
V(N16610)
Evaluation Circuit
V2
0Vdc R1
100MEG
V2 = 40 V1
V1 = 0 U1
TD = 0 S30SC4MT
TR = 100ns
TF = 100ns
PW = 100us
PER = 500us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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6. Comparison Graph
Circuit Simulation Result
10000
Measurement
Simulation
JUNCTION CAPACITANCE
1000
Cj(pF)
100
10
0.1 1 10
REVERSE VOLTAGE:VR(V)
Simulation Result
Cj (pF)
VR (V) %Error
Measurement Simulation
0.1 1800.000 1813.700 0.76
0.2 1650.000 1670.200 1.22
0.5 1400.000 1384.200 -1.13
1 1150.000 1123.600 -2.30
2 870.000 865.789 -0.48
5 590.000 581.680 -1.41
10 415.000 420.903 1.42
20 300.000 301.076 0.36
40 215.000 214.136 -0.40
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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7. Reverse Characteristic
Circuit Simulation Result
1.0mA
100uA
10uA
1.0uA
0V 10V 20V 30V 40V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m R2
100MEG
V1
0Vdc U1
S30SC4MT
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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8. Comparison Graph
Circuit Simulation Result
1
Measurement
Simulation
REVERSE CURRENT:IR(mA )
0.1
0.01
0.001
0 5 10 15 20 25 30 35 40
REVERSE VOLTAGE：VR(V)
Simulation Result
IR(mA)
VR(V) Error (%)
Measurement Simulation
2 0.010 0.010 -4.83
5 0.013 0.013 0.97
10 0.018 0.018 -1.53
15 0.022 0.022 0.20
20 0.028 0.028 -0.73
25 0.037 0.037 -0.81
30 0.050 0.050 0.94
35 0.070 0.071 1.18
40 0.100 0.099 -0.52
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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