SPICE MODEL of SG30SC6M (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / PROFESSIONAL
PART NUMBER: SG30SC6M
MANUFACTURER: SHINDENGEN
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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2. Spice Model Parameters
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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3. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.5V 1.0V 1.5V 2.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc SG30SC6M
R2
100MEG
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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4. Comparison Graph
Circuit Simulation Result
FORWARD CURRENT:IF(A) 100
10
1
Measurement
Simulation
0.1
0 0.5 1 1.5 2
FORWARD VOLTAGE：VF(V)
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.1 0.2450 0.2445 -0.19
0.2 0.2650 0.2637 -0.49
0.5 0.2950 0.2912 -1.29
1 0.3150 0.3150 -0.01
2 0.3450 0.3448 -0.05
5 0.4050 0.4041 -0.21
10 0.4800 0.4813 0.27
20 0.6100 0.6177 1.25
50 0.9700 0.9966 2.74
100 1.6200 1.6066 -0.83
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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5. Capacitance Characteristic
Circuit Simulation Result
10n
1.0n
100p
10p
100mV 1.0V 10V 60V
I(V2)/(60V/100n)
V(N16610)
Evaluation Circuit
V2
0Vdc R1
100MEG
V2 = 60 V1
V1 = 0 U1
TD = 0 SG30SC6M
TR = 100ns
TF = 100ns
PW = 100us
PER = 500us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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6. Comparison Graph
Circuit Simulation Result
10000
Measurement
Simulation
JUNCTION CAPACITANCE
1000
Cj(pF)
100
10
0.1 1 10
REVERSE VOLTAGE:VR(V)
Simulation Result
Cj (pF)
VR (V) %Error
Measurement Simulation
0.1 1800.000 1795.400 -0.26
0.2 1650.000 1648.500 -0.09
0.5 1350.000 1361.200 0.83
1 1100.000 1097.800 -0.20
2 830.000 839.867 1.19
5 550.000 554.881 0.89
10 390.000 395.674 1.45
20 280.000 278.459 -0.55
60 160.000 158.027 -1.23
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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7. Reverse Characteristic
Circuit Simulation Result
10mA
1.0mA
100uA
10uA
1.0uA
0V 20V 40V 60V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m R2
100MEG
V1
0Vdc U1
SG30SC6M
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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8. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
REVERSE CURRENT:IR(mA )
1
0.1
0.01
0.001
0 10 20 30 40 50 60
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Simulation Result
IR(mA)
VR(V) Error (%)
Measurement Simulation
6 0.0095 0.009 -4.29
10 0.0135 0.014 4.04
20 0.0200 0.021 3.70
30 0.0275 0.027 -2.61
40 0.0420 0.042 -1.13
50 0.0730 0.074 1.80
60 0.1350 0.135 -0.37
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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