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Device Modeling Report




COMPONENTS: DIODE/ GENERAL PURPOSE
RECTIFIER/ STANDARD MODEL
PART NUMBER: MA3X152K0L
MANUFACTURER: Panasonic




                Bee Technologies Inc.




   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                  1
Circuit Configuration


        D1
        DMA3X152K0L




             All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                            2
DIODE MODEL PARAMETERS
  PSpice
   model                                Model description
 parameter
     IS         Saturation Current
     N          Emission Coefficient
     RS         Series Resistance
    IKF         High-injection Knee Current
    CJO         Zero-bias Junction Capacitance
     M          Junction Grading Coefficient
     VJ         Junction Potential
    ISR         Recombination Current Saturation Value
     BV         Reverse Breakdown Voltage(a positive value)
    IBV         Reverse Breakdown Current(a positive value)
     TT         Transit Time
    EG          Energy-band Gap




             All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                            3
Forward Current Characteristics

Circuit Simulation result


               1.0A




              100mA




               10mA




              1.0mA




              100uA




               10uA
                      0V           0.2V   0.4V     0.6V       0.8V       1.0V       1.2V
                           I(R1)
                                                   V_V1




Evaluation circuit


                                           R1


                                          0.001m

                                     V1                        D1
                            0V                                 DMA3X152K0L




                                     0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                           4
Comparison Graph

Circuit Simulation result




Comparison table


                                             VF (V)
              IF (mA)                                                       %Error
                                Measurement           Simulation
                        0.1              0.520                 0.521              0.22
                        0.2              0.555                 0.553              -0.23
                        0.5              0.595                 0.596              0.11
                            1            0.631                 0.629              -0.42
                            2            0.656                 0.662              0.81
                            5            0.708                 0.707              -0.15
                        10               0.745                 0.744              -0.21
                        20               0.786                 0.786              -0.03
                        50               0.859                 0.858              -0.13
                      100                0.939                 0.940              0.07




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                          5
Junction Capacitance Characteristic

Circuit Simulation result


               10p




              1.0p




              100f
                     0V         10V                20V        30V    40V       50V   60V
                          I(V2)/(80V/1u)
                                                              V(R)



Evaluation circuit

                                                         V2
                                           R

                                                         0

                              V1 = 0       V1                        D1
                              V2 = 80                                DMA3X152K0L
                              TD = 0
                              TR = 1us
                              TF = 100ns
                              PW = 100us
                              PER = 10m


                                               0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                           6
Comparison Graph

Circuit Simulation result




Comparison table


                                             C (pF)
              VR (V)                                                        %Error
                                Measurement           Simulation
                            1            0.800                 0.795              -0.67
                            2            0.790                 0.775              -1.90
                            5            0.739                 0.749              1.33
                       10                0.715                 0.729              1.95
                       20                0.700                 0.709              1.33
                       50                0.695                 0.684              -1.60




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                          7
Reverse Recovery Characteristics

Circuit Simulation result


                    400mA




                    200mA




                       0A




                   -200mA




                   -400mA
                       0.96us     0.98us       1.00us          1.02us       1.04us 1.06us
                            I(R1)
                                                        Time


Evaluation circuit

                                                 R1



                            V1 = -9.4V           50
                            V2 = 10.99V
                            TD = 0ns      V1
                            TR = 3ns                                    D1
                            TF = 2.85ns                                 DMA3X152K0L
                            PW = 1us
                            PER = 100us




                                          0




    Comparison Measurement vs. Simulation
       Parameter            Unit     Measurement               Simulation             %Error
             trj            ns                 2.560                       2.539            -0.84




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                                    8
Reverse Recovery Characteristics                                                Reference




                                                     Measurement




Trj = 2.56 (ns)
Trb = 1.68 (ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50




                                                        Example




                               Relation between trj and trb




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                        9

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SPICE MODEL of MA3X152K0L (Standard Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD MODEL PART NUMBER: MA3X152K0L MANUFACTURER: Panasonic Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
  • 2. Circuit Configuration D1 DMA3X152K0L All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
  • 3. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
  • 4. Forward Current Characteristics Circuit Simulation result 1.0A 100mA 10mA 1.0mA 100uA 10uA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(R1) V_V1 Evaluation circuit R1 0.001m V1 D1 0V DMA3X152K0L 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
  • 5. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (mA) %Error Measurement Simulation 0.1 0.520 0.521 0.22 0.2 0.555 0.553 -0.23 0.5 0.595 0.596 0.11 1 0.631 0.629 -0.42 2 0.656 0.662 0.81 5 0.708 0.707 -0.15 10 0.745 0.744 -0.21 20 0.786 0.786 -0.03 50 0.859 0.858 -0.13 100 0.939 0.940 0.07 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
  • 6. Junction Capacitance Characteristic Circuit Simulation result 10p 1.0p 100f 0V 10V 20V 30V 40V 50V 60V I(V2)/(80V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 D1 V2 = 80 DMA3X152K0L TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
  • 7. Comparison Graph Circuit Simulation result Comparison table C (pF) VR (V) %Error Measurement Simulation 1 0.800 0.795 -0.67 2 0.790 0.775 -1.90 5 0.739 0.749 1.33 10 0.715 0.729 1.95 20 0.700 0.709 1.33 50 0.695 0.684 -1.60 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
  • 8. Reverse Recovery Characteristics Circuit Simulation result 400mA 200mA 0A -200mA -400mA 0.96us 0.98us 1.00us 1.02us 1.04us 1.06us I(R1) Time Evaluation circuit R1 V1 = -9.4V 50 V2 = 10.99V TD = 0ns V1 TR = 3ns D1 TF = 2.85ns DMA3X152K0L PW = 1us PER = 100us 0 Comparison Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trj ns 2.560 2.539 -0.84 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
  • 9. Reverse Recovery Characteristics Reference Measurement Trj = 2.56 (ns) Trb = 1.68 (ns) Conditions: Ifwd = lrev = 0.2(A), Rl = 50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9