The document details the device modeling report for a pin diode (part number L303EC) manufactured by Litec Corporation, including specifications such as saturation current, junction capacitance, and breakdown voltage. It presents simulation results for forward current characteristics, junction capacitance, and reverse characteristics, with comparisons to measured values and associated errors. The document is protected by copyright from Bee Technologies Inc., 2005.

1. Device Modeling Report
COMPONENTS: PIN Diode
PART NUMBER: L303EC
MANUFACTURER: Litec Corporation
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

3. Forward Current Characteristic
Circuit Simulation Result
1.0A
100mA
10mA
1.0mA
0.3V 1.0V 1.3V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc
L303EC
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

4. Comparison Graph
Circuit Simulation Result
Simulation Result
VF(V)
IF(mA) Error(%)
Measurement Simulation
1.000 0.660 0.661 0.152
2.000 0.690 0.692 0.290
5.000 0.735 0.734 -0.136
10.000 0.765 0.766 0.131
20.000 0.800 0.800 0.000
50.000 0.848 0.844 -0.472
100.000 0.880 0.882 0.227
200.000 0.925 0.926 0.108
500.000 1.010 1.010 0.000
1000.000 1.108 1.107 -0.090
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

5. Junction Capacitance Characteristic
Circuit Simulation Result
10p
1.0p
100f
1.0V 10V 100V
I(V2)/(180V/1us)
V(N12656)
Evaluation Circuit
V2
0Vdc
V2 = 180 V1 U1
TD = 0
V1 = 0 L303EC
TR = 1us
PW = 50us
TF = 10ns
PER = 10us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

6. Comparison Graph
Circuit Simulation Result
Simulation Result
Ct(pF)
VR(V) Error(%)
Measurement Simulation
1.000 2.180 2.106 -3.394
2.000 1.900 1.905 0.263
5.000 1.670 1.670 0.000
10.000 1.520 1.502 -1.184
20.000 1.380 1.359 -1.522
50.000 1.200 1.188 -1.000
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

7. Reverse Characteristic
Circuit Simulation Result
10nA
1.0nA
100pA
10pA
100mV 1.0V 10V 100V 1.0KV
-I(V1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc
L303EC
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

8. Comparison Graph
Circuit Simulation Result
Simulation Result
VR(V)
IR(nA Error(%)
Measurement Simulation
0.050 5.500 5.500 0.000
0.100 20.000 19.700 -1.500
0.200 43.000 42.300 -1.628
0.500 90.000 89.500 -0.556
0.600 105.000 105.000 0.000
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005