This document summarizes the PSpice model for the STPSC1006 silicon carbide Schottky diode from STMicroelectronics. It describes the key electrical parameters in the model and includes simulation results that compare well with manufacturer measurement data for forward and reverse current characteristics and junction capacitance over voltage. Simulation error is generally within a few percent.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: STPSC1006
MANUFACTURER: STMicroelectronics
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

3. Forward Current Characteristic
Circuit Simulation Result
20A
18A
16A
14A
12A
10A
8A
6A
4A
2A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc STPSC1006_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

4. Comparison Graph
Circuit Simulation Result
20
Measurement
18 Simulation
16
FORWARD CURRENT: IF(A)
14
12
10
8
6
4
2
0
0 0.5 1 1.5 2 2.5 3
FORWARD VOLTAGE: VF(V)
Simulation Result
VF(V)
IF(A) Error (%)
Measurement Simulation
0.5 0.9000 0.9016 0.18
1 0.9400 0.9394 -0.07
2 0.9950 0.9970 0.20
4 1.1000 1.0938 -0.56
8 1.2700 1.2678 -0.17
12 1.4300 1.4320 0.14
16 1.5900 1.5914 0.09
20 1.7500 1.7479 -0.12
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

5. Junction Capacitance Characteristic
Circuit Simulation Result
500p
450p
400p
350p
300p
250p
200p
150p
100p
50p
0
1.0V 10V 100V 400V
I(V2)/(400V/500n)
V(N16610)
Evaluation Circuit
V2
0Vdc
V2 = 400 V1 U1
V1 = 0 STPSC1006_P
TD = 0
TR = 500ns
TF = 500ns
PW = 100us
PER = 500us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

6. Comparison Graph
Circuit Simulation Result
500
Measurement
450 Simulation
400
350
CAPACITANCE: C(pF)
300
250
200
150
100
50
0
1 10 100 1000
REVERSE VOLTAGE:VR(V)
Simulation Result
C (pF)
VR(V) Error (%)
Measurement Simulation
1 465.000 470.064 1.09
2 390.000 386.879 -0.80
5 280.000 281.009 0.36
10 210.000 213.398 1.62
20 162.000 159.753 -1.39
50 105.000 107.577 2.45
100 76.000 79.434 4.52
200 58.000 58.509 0.88
300 50.500 48.958 -3.05
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

7. Reverse Characteristic
Circuit Simulation Result
10mA
1.0mA
100uA
10uA
1.0uA
100nA
0V 50V 100V 150V 200V 250V 300V 350V 400V 450V 500V 550V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc STPSC1006_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

8. Comparison Graph
Circuit Simulation Result
1.E+04
Measurement
Simulation
1.E+03
REVERSE CURRENT:IR(uA )
1.E+02
1.E+01
1.E+00
1.E-01
0 50 100 150 200 250 300 350 400 450 500 550 600
REVERSE VOLTAGE：VR(V)
Simulation Result
IR(uA)
VR(V) Error (%)
Measurement Simulation
25 0.180 0.180 0.07
50 0.235 0.230 -2.34
100 0.420 0.409 -2.55
200 1.550 1.498 -3.37
300 4.600 4.474 -2.75
400 14.000 13.597 -2.88
500 46.000 45.372 -1.37
600 145.000 144.087 -0.63
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010