Device Modeling Report




COMPONENTS:
DIODE/ SCHOOTTKY RECTIFIER / STANDARD
PART NUMBER: D10SC4M
MANUFACTURER: SHINDENGEN




              Bee Technologies Inc.


 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
PSpice model
                                   Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




         All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic


Circuit Simulation Result




Evaluation Circuit

               R1
                                U1
                0.01m

   0Vdc   V1




               SUBD10SC4M



                     0




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                              Vfwd(V)           Vfwd(V)
           Ifwd(A)                                                   %Error
                            Measurement        Simulation
                     0.1           0.290              0.291                    0.24
                     0.2           0.310              0.310                    0.03
                     0.5           0.340              0.340                   -0.06
                       1           0.373              0.369                   -1.07
                       2           0.400              0.407                    1.80
                       5           0.500              0.495                   -1.06
                      10           0.610              0.615                    0.74
                      20           0.835              0.830                   -0.60




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Junction Capacitance Characteristic


Circuit Simulation Result




Evaluation Circuit


                        V2

                                          U1
                              0Vdc

   V2 = 40      V1
   V1 = 0
   TD = 0
   TR = 10ns
   TF = 50ns
   PW = 5us                  SUBD10SC4M
   PER = 10us



                             0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                               Cj(pF)             Cj(pF)
          Vrev(V)                                                     %Error
                            Measurement         Simulation
                    0.1            665.00             620.00                  -6.77
                    0.2            625.00             644.80                   3.17
                    0.5            555.00             576.40                   3.86
                      1            478.00             488.40                   2.18
                      2            385.00             388.60                   0.94
                      5            270.00             265.30                  -1.74
                     10            189.00             195.10                   3.23
                     20            135.00             133.50                  -1.11
                     40             87.00              90.00                   3.45




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

SPICE MODEL of D10SC4M (Standard Model) in SPICE PARK

  • 1.
    Device Modeling Report COMPONENTS: DIODE/SCHOOTTKY RECTIFIER / STANDARD PART NUMBER: D10SC4M MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 2.
    PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 3.
    Forward Current Characteristic CircuitSimulation Result Evaluation Circuit R1 U1 0.01m 0Vdc V1 SUBD10SC4M 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 4.
    Comparison Graph Circuit SimulationResult Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.1 0.290 0.291 0.24 0.2 0.310 0.310 0.03 0.5 0.340 0.340 -0.06 1 0.373 0.369 -1.07 2 0.400 0.407 1.80 5 0.500 0.495 -1.06 10 0.610 0.615 0.74 20 0.835 0.830 -0.60 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 5.
    Junction Capacitance Characteristic CircuitSimulation Result Evaluation Circuit V2 U1 0Vdc V2 = 40 V1 V1 = 0 TD = 0 TR = 10ns TF = 50ns PW = 5us SUBD10SC4M PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 6.
    Comparison Graph Circuit SimulationResult Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0.1 665.00 620.00 -6.77 0.2 625.00 644.80 3.17 0.5 555.00 576.40 3.86 1 478.00 488.40 2.18 2 385.00 388.60 0.94 5 270.00 265.30 -1.74 10 189.00 195.10 3.23 20 135.00 133.50 -1.11 40 87.00 90.00 3.45 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004