SPICE MODEL of IDH03SG60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDH03SG60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
U1
IDH03SG60C
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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4. Forward Current Characteristics
Circuit Simulation result
3.0A
2.0A
1.0A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDH03SG60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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5. Comparison Graph
Circuit Simulation result
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.1 0.840 0.852 1.43
0.2 0.938 0.940 0.21
0.5 1.125 1.113 -1.07
1 1.343 1.336 -0.52
2 1.719 1.726 0.41
3 2.094 2.093 -0.05
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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6. Reverse Current Characteristic
Circuit Simulation result
10uA
1.0uA
100nA
10nA
1.0nA
100pA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDH03SG60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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7. Comparison Graph
Circuit Simulation result
Comparison table
IR (nA)
VR (V) %Error
Measurement Simulation
100 1.300 1.304 0.33
200 2.700 2.716 0.60
400 19.500 20.267 3.93
600 200.000 194.911 -2.54
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8. Junction Capacitance Characteristic
Circuit Simulation result
80p
70p
60p
50p
40p
30p
20p
10p
0
100mV 1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600 IDH03SG60C
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Comparison Graph
Circuit Simulation result
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
1 60.000 60.057 0.10
2 52.500 52.590 0.17
5 40.500 40.686 0.46
10 32.000 31.944 -0.18
20 24.600 24.464 -0.55
50 16.600 16.761 0.97
100 12.500 12.505 0.04
200 9.300 9.283 -0.18
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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