This document provides a device modeling report for a Schottky rectifier diode with part number S60SC6MT. It includes details on the diode components and manufacturer. It also summarizes the SPICE model parameters used to simulate the diode's forward and reverse current characteristics and junction capacitance. Graphs comparing the simulation results to measurements show good agreement.

1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / STANDARD
PART NUMBER: S60SC6MT
MANUFACTURER: SHINDENGEN
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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2. Spice Model Parameters
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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3. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc S60SC6MT
R2
100MEG
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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4. Comparison Graph
Circuit Simulation Result
100
FORWARD CURRENT:IF(A)
10
1
Measurement
Simulation
0.1
0 0.5 1 1.5 2 2.5
FORWARD VOLTAGE：VF(V)
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.1 0.2500 0.2485 -0.61
0.2 0.2700 0.2670 -1.11
0.5 0.2900 0.2929 1.01
1 0.3150 0.3145 -0.16
2 0.3400 0.3400 0.00
5 0.3900 0.3854 -1.18
10 0.4400 0.4398 -0.05
20 0.5350 0.5304 -0.86
50 0.7600 0.7722 1.60
100 1.1500 1.1536 0.31
200 1.9000 1.8984 -0.08
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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5. Capacitance Characteristic
Circuit Simulation Result
10n
1.0n
100p
10p
100mV 1.0V 10V 60V
I(V2)/(60V/100n)
V(N16610)
Evaluation Circuit
V2
0Vdc R1
100MEG
V2 = 60 V1
V1 = 0 U1
TD = 0 S60SC6MT
TR = 100ns
TF = 100ns
PW = 100us
PER = 500us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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6. Comparison Graph
Circuit Simulation Result
10000
Measurement
Simulation
JUNCTION CAPACITANCE
1000
Cj(pF)
100
10
0.1 1 10
REVERSE VOLTAGE:VR(V)
Simulation Result
Cj (pF)
VR (V) %Error
Measurement Simulation
0.1 3000.000 3077.900 2.60
0.2 2750.000 2803.500 1.95
0.5 2250.000 2279.200 1.30
1 1800.000 1819.800 1.10
2 1400.000 1381.800 -1.30
5 910.000 912.465 0.27
10 640.000 652.033 1.88
20 460.000 461.148 0.25
60 270.000 263.352 -2.46
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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