Device Modeling Report



COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: SCS110AG_75C
MANUFACTURER: ROHM
REMARK: Professional Model




                Bee Technologies Inc.



  All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
PSpice model
                                      Model description
 parameter
     IS         Saturation Current
     N          Emission Coefficient
     RS         Series Resistance
    IKF         High-injection Knee Current
    CJO         Zero-bias Junction Capacitance
     M          Junction Grading Coefficient
     VJ         Junction Potential
    ISR         Recombination Current Saturation Value
     BV         Reverse Breakdown Voltage(a positive value)
    IBV         Reverse Breakdown Current(a positive value)
     TT         Transit Time
    EG          Energy-band Gap




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Forward Current Characteristic

Circuit Simulation Result

       100A




        10A




       1.0A




      100mA




       10mA




      1.0mA
              0V             0.5V            1.0V            1.5V               2.0V   2.5V
                   I(R1)
                                                      V_V1

Evaluation Circuit


                                             R1


                                             0.01m



                                    V1                         U1
                           0Vdc                                SCS110AG_75C_P




                                                  0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Comparison Graph

Circuit Simulation Result



                                                  Measurement
                                                  Simulation

                               10.000
      FORWARD CURRENT: IF(A)




                                1.000



                                0.100



                                0.010



                                0.001
                                        0.0           0.5            1.0         1.5           2.0            2.5
                                                               FORWARD VOLTAGE: VF(V)


Simulation Result

                                                                      VF(V)
                                   IF(A)                                                          Error (%)
                                                    Measurement               Simulation
                                         0.001             0.8050                    0.8119               0.86
                                          0.01             0.8730                    0.8723              -0.08
                                            0.1            0.9450                    0.9408              -0.45
                                            0.2            0.9750                    0.9683              -0.69
                                            0.5            1.0200                    1.0174              -0.25
                                              1            1.0700                    1.0692              -0.07
                                              2            1.1350                    1.1414               0.56
                                              5            1.3000                    1.2999              -0.01
                                            10             1.5200                    1.5213               0.09
                                            15             1.7300                    1.7278              -0.13




                                          All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Junction Capacitance Characteristic

Circuit Simulation Result


      1.0n




      100p




       10p




      1.0p
        100mV                              1.0V                        10V          100V
            I(V2)/(600V/500n)
                                                       V(N36166)


Evaluation Circuit


                                              V2


                                                   0Vdc



                        V2 = 600      V1                           U1
                        V1 = 0                                     SCS110AG_75C_P
                        TD = 0
                        TR = 500ns
                        TF = 500ns
                        PW = 100us
                        PER = 500us


                                                   0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Comparison Graph

Circuit Simulation Result


                                              1000
                                                                                                            Measurement
       CAPACITANCE BETWEEN TERMINAL: Ct(pF)




                                                                                                            Simulation




                                              100




                                                10




                                                1
                                                     0.1                   1                 10                           100
                                                                          REVERSE VOLTAGE:VR(V)


Simulation Result

                                                                                C (pF)
                                                VR(V)                                                          Error (%)
                                                                  Measurement             Simulation
                                                            0.1         542.337                 544.030                0.31
                                                            0.2         522.371                 529.732                1.41
                                                            0.5         465.350                 471.766                1.38
                                                              1         404.500                 408.068                0.88
                                                              2         333.714                 334.092                0.11
                                                              5         236.672                 238.254                0.67
                                                            10          177.213                 177.749                0.30
                                                            20          130.504                 130.397               -0.08
                                                            50           85.120                  85.112               -0.01
                                                           100           62.215                  61.343               -1.40




                                                       All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Reverse Recovery Characteristic

Circuit Simulation Result

       400mA


       300mA


       200mA


       100mA


        -0mA


      -100mA


      -200mA


      -300mA


      -400mA
          1.98us 2.00us 2.02us              2.06us 2.08us 2.10us 2.12us              2.16us
               I(R1)
                                                      Time

Evaluation Circuit

                                             R1


                                             50
                        V1 = -9.29V
                        V2 = 11V
                        TD = 28n
                        TR = 20ns     V1                        U1
                        PW = 2us                                SCS110AG_75C_P
                        TF = 15ns
                        PER = 50us




                                                  0




Compare Measurement vs. Simulation

                                 Measurement             Simulation              Error (%)
            trj        ns                   7.500                  7.532               0.42




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Reverse Recovery Characteristic                                                 Reference




                                                      Measurement




Trj =7.5(ns)
Trb=16.00(ns)
Conditions: Ifwd=0.2A, Irev=0.2A, Rl=50Ω




                                                          Example




                               Relation between trj and trb




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Reverse Characteristic

Circuit Simulation Result

       10uA




      1.0uA




      100nA




       10nA




      1.0nA
              0V           100V         200V          300V          400V         500V   600V
                   I(R1)
                                                      V_V1

Evaluation Circuit


                                           R1


                                           100m



                                  V1                         U1
                           0Vdc                              SCS110AG_75C_P




                                                0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Comparison Graph

Circuit Simulation Result


                               100000
                                                  Measurement
                                                  Simulation

                                10000
     REVERSE CURRENT:IR(nA )




                                 1000



                                  100



                                   10



                                    1
                                        0           100         200         300         400         500            600

                                                               REVERSE VOLTAGE:VR(V)

Simulation Result

                                                                      IR(nA)
                                    VR(V)                                                           Error (%)
                                                     Measurement               Simulation
                                             20             2.2000                    2.1980               -0.09
                                            100             2.3500                    2.3920                1.79
                                            200             2.7800                    2.8865                3.83
                                            300             5.2400                    5.4553                4.11
                                            400            23.7000                   24.7090                4.26
                                            500           170.0000                 178.1630                 4.80
                                            600          1470.0000                1411.1000                -4.01




                                            All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

SPICE MODEL of SCS110AG , TC=75degree , PSpice (Professional Model) in SPICE PARK

  • 1.
    Device Modeling Report COMPONENTS:Silicon Carbide Schottky Diode PART NUMBER: SCS110AG_75C MANUFACTURER: ROHM REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  • 2.
    PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  • 3.
    Forward Current Characteristic CircuitSimulation Result 100A 10A 1.0A 100mA 10mA 1.0mA 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc SCS110AG_75C_P 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  • 4.
    Comparison Graph Circuit SimulationResult Measurement Simulation 10.000 FORWARD CURRENT: IF(A) 1.000 0.100 0.010 0.001 0.0 0.5 1.0 1.5 2.0 2.5 FORWARD VOLTAGE: VF(V) Simulation Result VF(V) IF(A) Error (%) Measurement Simulation 0.001 0.8050 0.8119 0.86 0.01 0.8730 0.8723 -0.08 0.1 0.9450 0.9408 -0.45 0.2 0.9750 0.9683 -0.69 0.5 1.0200 1.0174 -0.25 1 1.0700 1.0692 -0.07 2 1.1350 1.1414 0.56 5 1.3000 1.2999 -0.01 10 1.5200 1.5213 0.09 15 1.7300 1.7278 -0.13 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  • 5.
    Junction Capacitance Characteristic CircuitSimulation Result 1.0n 100p 10p 1.0p 100mV 1.0V 10V 100V I(V2)/(600V/500n) V(N36166) Evaluation Circuit V2 0Vdc V2 = 600 V1 U1 V1 = 0 SCS110AG_75C_P TD = 0 TR = 500ns TF = 500ns PW = 100us PER = 500us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  • 6.
    Comparison Graph Circuit SimulationResult 1000 Measurement CAPACITANCE BETWEEN TERMINAL: Ct(pF) Simulation 100 10 1 0.1 1 10 100 REVERSE VOLTAGE:VR(V) Simulation Result C (pF) VR(V) Error (%) Measurement Simulation 0.1 542.337 544.030 0.31 0.2 522.371 529.732 1.41 0.5 465.350 471.766 1.38 1 404.500 408.068 0.88 2 333.714 334.092 0.11 5 236.672 238.254 0.67 10 177.213 177.749 0.30 20 130.504 130.397 -0.08 50 85.120 85.112 -0.01 100 62.215 61.343 -1.40 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  • 7.
    Reverse Recovery Characteristic CircuitSimulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 1.98us 2.00us 2.02us 2.06us 2.08us 2.10us 2.12us 2.16us I(R1) Time Evaluation Circuit R1 50 V1 = -9.29V V2 = 11V TD = 28n TR = 20ns V1 U1 PW = 2us SCS110AG_75C_P TF = 15ns PER = 50us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 7.500 7.532 0.42 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  • 8.
    Reverse Recovery Characteristic Reference Measurement Trj =7.5(ns) Trb=16.00(ns) Conditions: Ifwd=0.2A, Irev=0.2A, Rl=50Ω Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  • 9.
    Reverse Characteristic Circuit SimulationResult 10uA 1.0uA 100nA 10nA 1.0nA 0V 100V 200V 300V 400V 500V 600V I(R1) V_V1 Evaluation Circuit R1 100m V1 U1 0Vdc SCS110AG_75C_P 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  • 10.
    Comparison Graph Circuit SimulationResult 100000 Measurement Simulation 10000 REVERSE CURRENT:IR(nA ) 1000 100 10 1 0 100 200 300 400 500 600 REVERSE VOLTAGE:VR(V) Simulation Result IR(nA) VR(V) Error (%) Measurement Simulation 20 2.2000 2.1980 -0.09 100 2.3500 2.3920 1.79 200 2.7800 2.8865 3.83 300 5.2400 5.4553 4.11 400 23.7000 24.7090 4.26 500 170.0000 178.1630 4.80 600 1470.0000 1411.1000 -4.01 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010