The document is a device modeling report for the silicon carbide Schottky diode part number scs110ag_75c from Rohm. It includes various circuit simulation results, evaluations, and comparisons of forward current characteristics, junction capacitance, and reverse recovery characteristics, detailing errors between measurement and simulation data. The report emphasizes the copyright owned by Bee Technologies Inc. for its content and simulations.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: SCS110AG_75C
MANUFACTURER: ROHM
REMARK: Professional Model
REPORT:(LTspice IV)
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

2. Spice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

3. Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
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4. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
10.000
FORWARD CURRENT: IF(A)
1.000
0.100
0.010
0.001
0.0 0.5 1.0 1.5 2.0 2.5
FORWARD VOLTAGE: VF(V)
Simulation Result
VF(V)
IF(A) Error (%)
Measurement Simulation
0.001 0.8050 0.8119 0.86
0.01 0.8730 0.8723 -0.08
0.1 0.9450 0.9408 -0.45
0.2 0.9750 0.9683 -0.69
0.5 1.0200 1.0174 -0.25
1 1.0700 1.0692 -0.07
2 1.1350 1.1414 0.56
5 1.3000 1.2999 -0.01
10 1.5200 1.5213 0.09
15 1.7300 1.7278 -0.13
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

5. Junction Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

6. Comparison Graph
Circuit Simulation Result
1000
Measurement
CAPACITANCE BETWEEN TERMINAL: Ct(pF)
Simulation
100
10
1
0.1 1 10 100
REVERSE VOLTAGE:VR(V)
Simulation Result
C (pF)
VR(V) Error (%)
Measurement Simulation
0.1 542.337 544.030 0.31
0.2 522.371 529.732 1.41
0.5 465.350 471.766 1.38
1 404.500 408.068 0.88
2 333.714 334.092 0.11
5 236.672 238.254 0.67
10 177.213 177.749 0.30
20 130.504 130.397 -0.08
50 85.120 85.112 -0.01
100 62.215 61.343 -1.40
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

7. Reverse Recovery Characteristic
Circuit Simulation Result
Time (s)
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 7.500 7.532 0.42
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8. Reverse Recovery Characteristic Reference
Measurement
Trj =7.5(ns)
Trb=16.0(ns)
Conditions: Ifwd=0.2A, Irev=0.2A, Rl=50Ω
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

9. Reverse Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

10. Comparison Graph
Circuit Simulation Result
100000
Measurement
Simulation
10000
REVERSE CURRENT:IR(nA )
1000
100
10
1
0 100 200 300 400 500 600
REVERSE VOLTAGE：VR(V)
Simulation Result
IR(nA)
VR(V) Error (%)
Measurement Simulation
20 2.2000 2.1980 -0.09
100 2.3500 2.3920 1.79
200 2.7800 2.8865 3.83
300 5.2400 5.4553 4.11
400 23.7000 24.7090 4.26
500 170.0000 178.1630 4.80
600 1470.0000 1411.1000 -4.01
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010