The document provides a device modeling report for a digital transistor with part number RN1965FS. It includes specifications for the transistor components and parameters, as well as simulation results comparing the transistor's IC-VI(ON), IC-VI(OFF), hFE-IC, and VCE(sat)-IC characteristics to measurement data, showing errors between 1-3%. Evaluation circuits and simulation conditions are also described.

1. Device Modeling Report
COMPONENTS: Digital transistor (BRT)
PART NUMBER: RN1965FS
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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2. DIGITAL TRANSISTOR MODEL
PSpice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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3. IC-VI(ON) Characteristics
Circuit simulation result
100mA
10mA
1.0mA
100uA
100mV 1.0V 10V 100V
-I(V1)
V_V2
Evaluation circuit
Q2
Q1 U1
RN1965FS V1
0.2Vdc
V2
0Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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4. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
COLLECTOR CURRENT : Ic (mA)
10
1
0.1
0.1 1 10 100
INPUT VOLTAGE : VI(ON) (V)
Simulation Result
Condition : VCE = 0.2 V
VI(ON) (V)
Ic(mA) Error (%)
Measurement Simulation
0.1 0.610 0.625 2.46
0.2 0.633 0.644 1.74
0.5 0.658 0.670 1.82
1 0.683 0.692 1.32
2 0.710 0.715 0.70
5 0.745 0.753 1.13
10 0.790 0.797 0.89
20 0.900 0.876 -2.67
50 1.200 1.166 -2.83
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
4

5. IC-VI(OFF) Characteristics
Circuit simulation result
10mA
1.0mA
100uA
10uA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(U1:4)
V_V2
Evaluation circuit
Q2
Q1 U1
RN1965FS
V1
5Vdc
V2
0Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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6. Comparison Graph
Circuit Simulation Result
10000
Measurement
Simulation
COLLECTOR CURRENT : Ic (uA)
1000
100
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
INPUT VOLTAGE : VI(OFF) (V)
Simulation Result
Condition : VCC = 5 V
VI(OFF) (V)
Ic(uA) Error (%)
Measurement Simulation
10 0.553 0.561 1.45
20 0.571 0.579 1.40
50 0.594 0.604 1.68
100 0.614 0.624 1.63
200 0.634 0.643 1.42
500 0.660 0.669 1.36
1000 0.681 0.689 1.17
2000 0.700 0.713 1.86
3000 0.715 0.728 1.82
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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7. hFE-IC Characteristics
Circuit simulation result
1.0K
100
10
1.0mA 10mA 100mA
I(V2)/ I_I1
I(V2)
Evaluation circuit
V2
0Vdc
Q2
Q1 U1
RN1965FS
VCE
5Vdc
0Adc
I1
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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8. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
DC CURRENT GAIN : hFE
100
10
1 10 100
COLLECTOR CURRENT : Ic (mA)
Simulation Result
Condition : VCC = 5 V
hFE
Ic(mA) Error (%)
Measurement Simulation
1 65.000 64.698 -0.46
2 115.000 117.009 1.75
5 222.500 228.392 2.65
10 311.000 322.907 3.83
20 365.000 375.278 2.82
30 370.000 373.149 0.85
50 340.000 341.269 0.37
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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9. VCE(Sat)-IC Characteristics
Circuit simulation result
1.0V
100mV
10mV
1.0mA 10mA 100mA
V(F1:2)
I_I2
Evaluation circuit
Q2
Q1 U1
RN1965FS
F1
GAIN = 0.05
0Adc
F I2
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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10. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
COLLECTOR-EMITTER SATURATION
VOLTAGE Vce (sat) (mV)
100
10
1 10 100
COLLECTOR CURRENT : Ic (mA)
Simulation Result
Condition : IC/IB=20
VCE(sat) (mV)
Ic(mA) Error (%)
Measurement Simulation
1 21.000 21.122 0.58
2 19.950 20.344 1.97
3 21.000 21.398 1.90
5 23.750 24.211 1.94
10 31.000 31.465 1.50
20 44.500 45.127 1.41
50 82.000 82.935 1.14
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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