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Evaluation Report



COMPONENTS: TRANSISTOR
PART NUMBER: 2SC2712
MANUFACTURER: TOSHIBA




              Bee Technologies Inc.




All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Pspice model
                                            Model description
 parameter
      IS        Saturation Current
      BF        Ideal Maximum Forward Beta
      NF        Forward Current Emission Coefficient
    VAF         Forward Early Voltage
     IKF        Forward Beta Roll-off Knee Current
     ISE        Non-ideal Base-Emitter Diode Saturation Current
     NE         Non-ideal Base-Emitter Diode Emission Coefficient
     BR         Ideal Maximum Reverse Beta
     NR         Reverse Emission Coefficient
    VAR         Reverse Early Voltage
    IKR         Reverse Beta Roll-off Knee Current
    ISC         Non-ideal Base-Collector Diode Saturation Current
     NC         Non-ideal Base-Collector Diode Emission Coefficient
     NK         Forward Beta Roll-off Slope Exponent
     RE         Emitter Resistance
     RB         Base Resistance
     RC         Series Collector Resistance
    CJE         Zero-bias Emitter-Base Junction Capacitance
    VJE         Emitter-Base Junction Potential
    MJE         Emitter-Base Junction Grading Coefficient
    CJC         Zero-bias Collector-Base Junction Capacitance
    VJC         Collector-base Junction Potential
    MJC         Collector-base Junction Grading Coefficient
      FC        Coefficient for Onset of Forward-bias Depletion
                Capacitance
     TF         Forward Transit Time
    XTF         Coefficient for TF Dependency on Vce
    VTF         Voltage for TF Dependency on Vce
    ITF         Current for TF Dependency on Ic
    PTF         Excess Phase at f=1/2pi*TF
    TR          Reverse Transit Time
    EG          Activation Energy
    XTB         Forward Beta Temperature Coefficient
    XTI         Temperature Coefficient for IS




               All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Transistor hFE-IC Characteristics

 Circuit Simulation Result

1.0K




 100




  10
  100uA             1.0mA                        10mA           100mA   300mA
      I(vsence)/ IB(Q1)
                                      I(vsence)



Evaluation Circuit


                                      v sence


                               0Vdc



                           Q1
                          C2712Y
                                                   V1
                                          6Vdc
         I1

         0Adc




                           0




                All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph

 Circuit Simulation Result



               1000
                             Measurement
                             Simulation




                100
      hFE(S)




                 10
                      0.1           1               10             100              1000
                                                 -IC(mA)


Simulation Result

                                           hFE
          Ic(mA)                                                         Error(%)
                            Measurement            Simulation
                  0.1               140.000                158.000          12.857
                  0.2               140.000                158.000          12.857
                  0.5               140.000                158.000          12.857
                    1               140.000                158.000          12.857
                    2               140.000                158.000          12.857
                    5               140.000                158.000          12.857
                   10               140.000                158.000          12.857
                   20               140.000                157.000          12.143
                   50               140.000                154.000          10.000
                 100                135.000                150.000          11.111
                 200                 91.000                143.000          57.143



                  All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
VCE(Sat)-IC Characteristics

  Circuit Simulation Result

 3.0V




 1.0V




100mV




 10mV
   100uA                     1.0mA                 10mA               100mA 300mA
       V(Q1:c)
                                              IC(Q1)

 Evaluation Circuit



                                              VC




                                      Q1
                                     C2712Y
                  F1
                  F
             I1   10

          0Adc




         0




                       All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph

 Circuit Simulation Result



                 100
                                 Measurement
                                 Simulation


                  10
     VCE(SAT)




                   1




                  0.1




                 0.01
                        0.1              1              10              100             1000
                                                      IC(mA)

Simulation Result

                                         VCE(sat)
                IC(mA)                                                        Error(%)
                                Measurement      Simulation
                        0.1                   0.042                 0.057         35.714
                        0.2                   0.040                 0.057         42.500
                        0.5                   0.038                 0.057         50.000
                          1                   0.038                 0.058         52.632
                          2                   0.037                 0.061         64.865
                          5                   0.038                 0.068         78.947
                         10                   0.041                 0.080         95.122
                         20                   0.048                 0.101        110.417
                         50                   0.070                 0.161        130.000
                        100                   0.105                 0.255        142.857
                        200                   0.195                 0.435        123.077



                         All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
VBE(Sat)-IC Characteristics

  Circuit Simulation Result

 30V




 10V




1.0V




100mV
   100uA                     1.0mA                 10mA               100mA 300mA
       V(Q1:b)
                                              IC(Q1)



 Evaluation Circuit


                                              VC




                                      Q1
                                     C2712Y
                  F1
                  F
             I1   10

          0Adc




         0




                       All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph

 Circuit Simulation Result


                  2
                                Measurement
                                Simulation



                 1.5
      VBE(SAT)




                  1




                 0.5




                  0
                       0.1             1               10             100              1000
                                                     IC(mA)


Simulation Result

                                        VBE(sat)
            IC(A)                                                            Error(%)
                               Measurement      Simulation
                    0.1                      0.600                0.598          -0.333
                    0.2                      0.610                0.616           0.984
                    0.5                      0.635                0.642           1.102
                      1                      0.650                0.664           2.154
                      2                      0.680                0.688           1.176
                      5                      0.720                0.730           1.389
                     10                      0.760                0.773           1.711
                     20                      0.810                0.835           3.086
                     50                      0.900                0.968           7.556
                   100                       0.980                1.140          16.327
                   200                       1.050                1.437          36.857



                        All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Output Characteristics

 Circuit Simulation Result

240mA

         3.0

200mA
                2.0


160mA
                                                          1.0


120mA



                                                          0.5
 80mA




 40mA
                                                         IB=0.2mA
                                                         A

   0A
        0V        1.0V        2.0V       3.0V          4.0V          5.0V   6.0V   7.0V
             IC(Q1)
                                                V_V1



 Evaluation Circuit




                                 Q1
                                C2712Y

                                                        10Vdc
                 I1                                             V1

                0Adc




                                 0




                       All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Output Characteristics                                   Reference




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

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Evaluation of Transistor Part 2SC2712

  • 1. Evaluation Report COMPONENTS: TRANSISTOR PART NUMBER: 2SC2712 MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 2. Pspice model Model description parameter IS Saturation Current BF Ideal Maximum Forward Beta NF Forward Current Emission Coefficient VAF Forward Early Voltage IKF Forward Beta Roll-off Knee Current ISE Non-ideal Base-Emitter Diode Saturation Current NE Non-ideal Base-Emitter Diode Emission Coefficient BR Ideal Maximum Reverse Beta NR Reverse Emission Coefficient VAR Reverse Early Voltage IKR Reverse Beta Roll-off Knee Current ISC Non-ideal Base-Collector Diode Saturation Current NC Non-ideal Base-Collector Diode Emission Coefficient NK Forward Beta Roll-off Slope Exponent RE Emitter Resistance RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance VJE Emitter-Base Junction Potential MJE Emitter-Base Junction Grading Coefficient CJC Zero-bias Collector-Base Junction Capacitance VJC Collector-base Junction Potential MJC Collector-base Junction Grading Coefficient FC Coefficient for Onset of Forward-bias Depletion Capacitance TF Forward Transit Time XTF Coefficient for TF Dependency on Vce VTF Voltage for TF Dependency on Vce ITF Current for TF Dependency on Ic PTF Excess Phase at f=1/2pi*TF TR Reverse Transit Time EG Activation Energy XTB Forward Beta Temperature Coefficient XTI Temperature Coefficient for IS All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 3. Transistor hFE-IC Characteristics Circuit Simulation Result 1.0K 100 10 100uA 1.0mA 10mA 100mA 300mA I(vsence)/ IB(Q1) I(vsence) Evaluation Circuit v sence 0Vdc Q1 C2712Y V1 6Vdc I1 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 4. Comparison Graph Circuit Simulation Result 1000 Measurement Simulation 100 hFE(S) 10 0.1 1 10 100 1000 -IC(mA) Simulation Result hFE Ic(mA) Error(%) Measurement Simulation 0.1 140.000 158.000 12.857 0.2 140.000 158.000 12.857 0.5 140.000 158.000 12.857 1 140.000 158.000 12.857 2 140.000 158.000 12.857 5 140.000 158.000 12.857 10 140.000 158.000 12.857 20 140.000 157.000 12.143 50 140.000 154.000 10.000 100 135.000 150.000 11.111 200 91.000 143.000 57.143 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 5. VCE(Sat)-IC Characteristics Circuit Simulation Result 3.0V 1.0V 100mV 10mV 100uA 1.0mA 10mA 100mA 300mA V(Q1:c) IC(Q1) Evaluation Circuit VC Q1 C2712Y F1 F I1 10 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 6. Comparison Graph Circuit Simulation Result 100 Measurement Simulation 10 VCE(SAT) 1 0.1 0.01 0.1 1 10 100 1000 IC(mA) Simulation Result VCE(sat) IC(mA) Error(%) Measurement Simulation 0.1 0.042 0.057 35.714 0.2 0.040 0.057 42.500 0.5 0.038 0.057 50.000 1 0.038 0.058 52.632 2 0.037 0.061 64.865 5 0.038 0.068 78.947 10 0.041 0.080 95.122 20 0.048 0.101 110.417 50 0.070 0.161 130.000 100 0.105 0.255 142.857 200 0.195 0.435 123.077 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 7. VBE(Sat)-IC Characteristics Circuit Simulation Result 30V 10V 1.0V 100mV 100uA 1.0mA 10mA 100mA 300mA V(Q1:b) IC(Q1) Evaluation Circuit VC Q1 C2712Y F1 F I1 10 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 8. Comparison Graph Circuit Simulation Result 2 Measurement Simulation 1.5 VBE(SAT) 1 0.5 0 0.1 1 10 100 1000 IC(mA) Simulation Result VBE(sat) IC(A) Error(%) Measurement Simulation 0.1 0.600 0.598 -0.333 0.2 0.610 0.616 0.984 0.5 0.635 0.642 1.102 1 0.650 0.664 2.154 2 0.680 0.688 1.176 5 0.720 0.730 1.389 10 0.760 0.773 1.711 20 0.810 0.835 3.086 50 0.900 0.968 7.556 100 0.980 1.140 16.327 200 1.050 1.437 36.857 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 9. Output Characteristics Circuit Simulation Result 240mA 3.0 200mA 2.0 160mA 1.0 120mA 0.5 80mA 40mA IB=0.2mA A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V IC(Q1) V_V1 Evaluation Circuit Q1 C2712Y 10Vdc I1 V1 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 10. Output Characteristics Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006