This document discusses the emerging field of transparent electronics. The key goals are to discover transparent, high-performance electronic materials and implement them in transistors, circuits and systems. This would enable applications like touchscreens, solar cells, displays, and smart windows that are transparent. Technologies like transparent thin-film transistors, resistors, capacitors and indutors are discussed. Recent advances include transparent memory devices that could replace flash memory and memristors that mimic the brain's neurons. Future applications may include electronic devices integrated into car windshields, windows, and other transparent surfaces.

1. TRANSPARENT ELECTRONICS

2. the device building block materials, the
semiconductor
, the electric contacts, and the dielectric
layers,
must now be invisible –
A TRUE CHALLENGE!!
touch display panels,
solar cells, flat panel
displays,
heaters,‘smart
windows’

3. Boom in electronic gadgets

4. TOUCH PANELS

5. Transparent Concept Phone
By BloodRabbit, which he
thought
of while driving home from
work.
its dimensions are that of a
credit card
You are probably scratching
your
head andwondering how the
electronics and other
stuff like a battery and camera
fits
in but this a very futuristic
concept phone

6. **CLEAR ELECTRONICS MAKE YOUR
ROOM APPEAR MORE SPACIOUS BY
ALLOWING
ELECTRONIC DEVICES TO BE
CONSOLIDATED AND STACKED IN
SMALL SPACES
**THIS TECHNOLOGY COULD ENABLE
THE WINDOWS OR MIRRORS IN OUR
HOMES
TO BE USED AS COMPUTER
MONITORS AND TELEVISION
SCREENS

8. Information displayed on an automobile windshield or
surfing the web on the Glass top of the coffee table

9. 3 GOALS TO MOVE AHEAD
the first scientific goal of this technology must be to discover, understand
and implement transparent high-performance electronic materials.
The second goal is their implementation and evaluation in transistor and
circuit structures.
The third goal relates to achieving application-specific properties since
transistor performance and materials property
requirements vary, depending on the final product device specifications.

11. COMBINING OPTICAL TRANSPARENCY WITH
ELECTRICAL CONDUCTIVITY
*Transparent insulator possesses
completely filled
valence band and empty
conduction band.
*To become transparent
conducting oxide(TCO),these are
doped with some oxides In2O3,
SnO2, ZnO and CdO to displace
fermi level near to the conduction
band

12. TRANSPARENT ELECTRONIC DEVICES
These devices must be
chosen,designed ,fabricated and
interconnected inorder to construct
circuits which have to be
simulated and build in such a way that
they function appropriately
with other circuits
DEVICES CIRCUITS SYSTEMS

13. PASSIVE LINEAR DEVICES
*Passive device absorb energy, in
contrast to an active device which
is capable of controlling the flow of
energy
*a linear device is distinguished by the
fact that its input and output
characterstics can be described using
linear mathematical relationship
*the three passive linear devices are:
**RESISTORS
**CAPACITORS
**INDUDCTORS

14. RESISTORS
a)plan-view of linear
transparent thin-film
resistor(TTFR)
b)A meander TTFR
c) cross-section view of
TTFR

16. CAPACITORS
*TheTTFC capacitance is
established by the capacitance
density, i.e., the capacitance
per unit area,
*a large capacitance density
is desired, in order to minimize
the size of a capacitor.
* reducing the insulator
thickness alsoincreases the
capacitance density

18. INDUCTORS
*The quality factor, Q,
is basically an inductor
performance figure-of-merit.
A larger Q is better.
*Inductors are useful in resonant
circuits and filters.
limiting current fluctuations
energy storage devices for
switched-mode power supplies
*TTFI with good performance appears
to be difficult to construct and still
challenging

19. TRANSPARENT THIN-FILM TRANSISTORS(TTFTs)
TTFTs constitute the heart of transparent electronics
a) staggered, bottom-gate since
source-drain
and gate contacts
are located at the top and bottom
of the device
b) shows a coplanar, top-gate
structure in which the sourcedrain and thegate are all
positioned on the top side of the
TTFT

20. Ideal n-channel transparent thin
-film transistor (TTFT) operation
(a) Cut- off. Zero drain current
(I D =0)
which is defined by V GS <V ON
(b) Linear, pre-pinch-off.
I D is described by Ohm’s law
[I D =V DS / R C (V GS )] at
low V DS [V DS <<V GS -V ON ]
(c) Nonlinear, pre-pinch-off and,
post- pinch-off, saturation
V DS =V GS -V ON because of the
depletion or ‘pinch- off’

21. ADVANCEMENTS IN TECHNOLOGY
* TRRAM(transparent resistive random access memory),like cmos device
that provides non-volatile memory means data don't get lost when power is off
*TRRAM device is based on an ITO(indium tin oxide) capacitor structure which
provides a transmittance of 81%in the visible region of the chip. the data
retention is expected to be about 10 years
*RRAM is referred to as “memristor” which could be a new technology where
computer memory is based on resistance instead of electric
which flash memory depends.
charge on
*products using these approach could become more smaller,faster and cheaper
than silicon transistors

22. Flash memory
Flash memory can erase its
data in entire blocks, ease in
frequent updating
of large amounts of data,
Inside the flash chip,
information is stored in
cells. Tunneling electrons pass
through a low conductive
material to change the
electronic charge of the gate
"in a flash," clearing the cell
of its contents so that it can be
rewritten. This is how flash
memory gets its name.

23. The first memory chip “Memristor” mimics
the brain,Future flash memory.
*Whose electrical resistance
changes when voltage is
applied.ReRAM is based on
materials
*ReRAM significantly stores more
memory and demans less energy
and space to store data.It is far
more advanced than the current
technology.
*does not depend on the diffusion
of metallic ions to form conductive
paths.

24. RRAM v/s flash memory
*its resistance changes depending on
how much current has passed through it
it “remembers” that value
even after power is turned off.
*“We’re reaching the limits of what
we can do with flash memory in terms of
increasing the storage density,
and it’s also relatively high power
and not as fast as we would like
*“Memristor memory chips promise to
run at least 10 times faster and use 10
times less power than an equivalent Flash
memory chip,

25. MEMRISTOR
Continuously variable
resistance that
depends on the last
voltage that was
applied.
This is an important
property that allows the
device to mimic how
neurons in the brain
function.
Devices that operate in
this way are known as
‘memristors’.

26. RECENT DISCOVERIES
*its introduction in 1988 by Toshiba, NAND flash nonvolatile memory
has scaled to 1x-nm feature sizes, shrinking cell sizes reduce the
number of electronsstored on the floating gate. RRAM provides an alternative.
*in march 2003,researchers at Oregon State University(OSU) builts
the world’s First transparent transistor
*A group of scientists at Korea Advanced Institute Of Science
And Technology (KAIST) had fabricated a working computer chip
that is almost transparent in Dec,2008
*hewletl-packard is the first company which is gonna to to use RRAM
TECHNOLOGY in its products from this july

27. A NEW REVOLUTION

28. FUTURE SCOPE
The team are also exploring
using the resistance properties
of their material not just for use
in memory but also as a
computer processor.This
versatility will someday replace
memory and central processing
units(CPUs)with a single chip
that can perform both
functions.
much progress has beenmade in developing new materials and devices for high
performance transparentsolar cells, there is still plenty of opportunity to study and
improve deviceperformance and fabrication techniques compared with the
nontransparent solarcell devices.

30. FUTURE GADGETS

31. What we see in science fiction movies are going to be a real working
technology and it is not very far,Competition in the world of technology
brings us suprising stuffs that we once dreamed of.