Ovonic unified memory
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This document presents an overview of Ovonic Unified Memory (OUM) as an emerging non-volatile memory technology. It discusses the limitations of current memory technologies like DRAM, RAM, and flash memory. It then provides details on the fundamentals and operation of OUM, which uses electric current to reversibly switch between amorphous and crystalline phases in chalcogenide materials for data storage. Key advantages of OUM include non-volatility, high density, low cost, and highly scalable properties. The document concludes that optimized OUM has potential for low power operation and radiation tolerance.
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Ovonic Unified Memory(Ppt)
Semiconductors currently provide the memory and processing capabilities of modern electronics, but existing memory technologies have limitations. Ovonic unified memory (OUM) uses a phase change material called chalcogenide that can rapidly and reversibly switch between amorphous and crystalline structural states to store data. OUM offers improvements over existing memory such as small cell size, simple manufacturing, low voltage operation, and high scalability. Testing of OUM integrated with CMOS transistors showed full functionality of memory arrays without degrading CMOS performance.
Ovonic unified memory(oum)
This document discusses emerging non-volatile memory technologies and focuses on Ovonic Unified Memory (OUM). It outlines the limitations of current memory technologies like DRAM, RAM, and FLASH. It then explains the fundamentals and operation of OUM, which uses a chalcogenide material that can be switched between amorphous and crystalline structural states by applying electric current to heat the material. The document notes several advantages of OUM, including its non-volatility, high density, simple structure, low cost and scalability. OUM offers improved memory that addresses many of the limitations of present technologies.
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PHASE CHANGE MEMORY
The document discusses Ovonic Unified Memory (OUM), a promising emerging non-volatile memory technology that uses a reversible phase change in chalcogenide materials to store data. OUM offers advantages over existing memory technologies like DRAM, SRAM, and flash memory by allowing higher density stacking and greater endurance. The document provides background on the history and development of OUM, which was originally explored in the 1960s and offers potential to address scaling limitations of other memory technologies.
Mram (magneticRAM)
for presenting students only:)
a clear concept and useful for 10 minute presentation.
images that helps you to discribe the slides.
have fun:) keep remember that this is basic concepts so i preffer it for MCA andCE students only. thank you.
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Ovonic Unified Memory(Ppt)
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2. By access as sequential (location must be accessed in order) vs random access memory (RAM) which allows random access.
3. As static (maintains data without refresh) vs dynamic RAM which must be periodically refreshed.
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emerging memory technologies Document
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Challenges of emerging memory memristor.
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Nanoparticle based charge trapping memory device applying mos technology a ...
Nanoparticle based charge trapping memory device applying mos technology a ...
Nanoparticle based charge trapping memory device applying mos technology a co...
Nanoparticle based charge trapping memory device applying mos technology a co...
Nanoparticle based charge trapping memory device applying mos technology a co...
Nanoparticle based charge trapping memory device applying mos technology a co...
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Ovonic unified memory
- 2. Submitted by Revanna Navi 2BL09ec056 UNDER THE GUIDENECE OF PROF: M.S JOLAD
- 3. ORGANISATION OF THE PRESENTATION 1. Introduction 2. Limitations of present memory technology 3. Fundamentals of emerging memories 4. Ovonic Unified Memory 5. Amorphous v/s crystalline 6. OUM Architecture 7. Basic device operation 8. Features of OUM 9. Advantages of OUM 10. Conclusion
- 4. INTRODUCTION SEMICONDUCTORS FORM THE FUNDAMENTAL BUILDING BLOCKS OF MODERNS ELECTRONICS WORLD MATERIAL LIMITED SCALING
- 5. Limitations of present memory technology DRAM IS VOLATILE AND DIFFICULT TO INTIGRATE RAM IS HIGH COST AND VOLATILE FLASH MEMORY IS SLOWER IN WRITES EXPANSION IN 2D SPACE
- 6. FUNDAMENTALS OF EMERGING MEMORIES FeRam Polymer Memory NROM MRAMS Ovonic Unified Memory
- 7. Ovonic Unified Memory(OUM) Instead of using laser beam, use electric current to heat the material. – High current, high temperature: amorphous phase, high resistance – Medium current, lower temperature: crystalline phase, low resistance Low current to sense resistance
- 8. Amorphous vs crystalline surfaces
- 10. BASIC DEVICE OPERATION Set/Reset Pulses
- 11. THE FEATURES OF OUM NON VOLATILE HIGH DENSITY NON DESTRUCTIVE READ HIGHLY SCALABLE LOW COST
- 12. ADVANTAGES OF OUM REVERSIBLE STRUCTURAL CHANGE SMALL ACTIVE STORAGE MEDIUM LOW VOLTAGE SINGLE SUPPLY HIGH TEMPARATURE RESISTANCE SIMPLE PLANAR DEVICE STRUCTURE
- 13. CONCLUSION OPTIMIZED OUM ALL MECHANIC DEPENDENCY OUM OFFERS LOW POWER OPERATION AND RADIATION TOLERANCE
- 14. REFERENCES www.intel.com www.ovonyx.com www.baesystems.com www.aero.org
- 16. THANK YOU