4. OUM(Ovonic Unified Memory) II. OUM Technology Concept Annealing Dependence of Ge2Sb2Te5 Electrical Resistivity (ten minute isochronal anneal)
5.
6.
7.
8. OUM(Ovonic Unified Memory) IV. OUM Array Operation READ SET RESET Vdd 0 V Vdd 0 V I READ 0 V Vdd 0 V Vdd 0 V I SET 0 V Vdd 0 V Vdd 0 V I RESET 0 V WL n+1 WL n WL n-1 BL n+1 BL n BL n-1
9. OUM(Ovonic Unified Memory) V. OUM advantages OUM uses a reversible structural phase-change scaled device has been demonstrated Cost/Bit Reduction Small active storage medium Small cell size – small die size Simple manufacturing process – low step count Simple planar device structure Low voltage – single supply Reduced assembly and test costs Highly Scalable Performance improves with scaling Only lithography limited Low voltage operation Multi-state demonstrated
![OUM(Ovonic Unified Memory) ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]](https://image.slidesharecdn.com/oum1-ovonicunifiedmemory-110913051130-phpapp02/85/Oum-1-ovonic-unified-memory-1-320.jpg)
![OUM(Ovonic Unified Memory) I.Introduction ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)