IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
DESIGN AND ANALYSIS OF 2 GHz 130nm CMOS CASCODE LOW NOISE AMPLIFIER WITH INTE...csijjournal
This work, illustrates the development of 2 GHz Low Noise Amplifier (LNA) interfaced with square truncated edge-fed right circularly polarized patch antenna. The LNA is simulated on Agilent ADS platform with TSMC 130nm RF CMOS process. The development of cascode amplifier and its optimization has been further exemplified. The developed LNA is tuned for 2 GHz and the performance is tuned for high stability factor of 4, Gain of 19 dB which is essential for any mobile device, Noise Figure (NF) of 1.15 dB with a P1dB point at -9 dBm. Further a truncated patch antenna with right circular polarization has been simulated on EMpro. The antenna has a gain of 6.1 dB in the azimuth plane. The simulated system can be further integrated to form the RF front end of TDD2000 LTE standard mobile device.
Design of 10 to 12 GHz Low Noise Amplifier for Ultrawideband (UWB) SystemIJECEIAES
Balanced amplifier is the structure proposed in this article, it provides better performance. In fact, the single amplifier meets the specification for noise figure and gain but fails to meet the return loss specification due to the large mis-matches on the input & outputs. To overcome this problem one solution is to use balanced amplifier topography. In this paper, a wide-band and highgain microwave balanced amplifier constituted with branch line coupler circuit is proposed. The amplifier is unconditionally stable in the band [9-13] GHz where the gain is about 20dB. The input reflection (S11) and output return loss (S22) at 11 GHz are -33.4dB and -33.5dB respectively.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
DESIGN AND ANALYSIS OF 2 GHz 130nm CMOS CASCODE LOW NOISE AMPLIFIER WITH INTE...csijjournal
This work, illustrates the development of 2 GHz Low Noise Amplifier (LNA) interfaced with square truncated edge-fed right circularly polarized patch antenna. The LNA is simulated on Agilent ADS platform with TSMC 130nm RF CMOS process. The development of cascode amplifier and its optimization has been further exemplified. The developed LNA is tuned for 2 GHz and the performance is tuned for high stability factor of 4, Gain of 19 dB which is essential for any mobile device, Noise Figure (NF) of 1.15 dB with a P1dB point at -9 dBm. Further a truncated patch antenna with right circular polarization has been simulated on EMpro. The antenna has a gain of 6.1 dB in the azimuth plane. The simulated system can be further integrated to form the RF front end of TDD2000 LTE standard mobile device.
Design of 10 to 12 GHz Low Noise Amplifier for Ultrawideband (UWB) SystemIJECEIAES
Balanced amplifier is the structure proposed in this article, it provides better performance. In fact, the single amplifier meets the specification for noise figure and gain but fails to meet the return loss specification due to the large mis-matches on the input & outputs. To overcome this problem one solution is to use balanced amplifier topography. In this paper, a wide-band and highgain microwave balanced amplifier constituted with branch line coupler circuit is proposed. The amplifier is unconditionally stable in the band [9-13] GHz where the gain is about 20dB. The input reflection (S11) and output return loss (S22) at 11 GHz are -33.4dB and -33.5dB respectively.
The Analysis of Dead Time on Switching Loss in High and Low Side MOSFETs of Z...IDES Editor
This work is about the analysis of dead time variation
on switching losses in a Zero Voltage Switching (ZVS)
synchronous buck converter (SBC) circuit. In high frequency
converter circuits, switching losses are commonly linked with
high and low side switches of SBC circuit. They are activated
externally by the gate driver circuit. The duty ratio, dead time
and resonant inductor are the parameters that affect the
efficiency of the circuit. These variables can be adjusted for
the optimization purposes. The study primarily focuses on
varying the settings of input pulses of the MOSFETs in the
resonant gate driver circuit which consequently affects the
performance of the ZVS synchronous buck converter circuit.
Using the predetermined inductor of 9 nH, the frequency is
maintained at 1 MHz for each cycle transition. The switching
loss graph is obtained and switching losses for both S1 and S2
are calculated and compared to the findings from previous
work. It has shown a decrease in losses by 13.8 % in S1. A dead
time of 15 ns has been determined to be optimized value in
the SBC design.
A 2.4 ghz cmos lna input matching design using resistive feedback topology in...eSAT Journals
Abstract The attempt made in the paper shows an innovative designing for the enhancement and reliability in CMOS technology. A 2.4 GHz resistive feedback narrowband noise amplifier (LNA) using a series inductor input matching networks. It is easy reliable with an extra gm boosting as well as inductively degenerated topology. By using this resistive feedback topology increases the gain as well as noise figure of 2.2 dB,S21 parameter of 26dB,and IIP3 of -13dBm,while 2.8mW of power consuming from a 1.2V and its area 0.6mm2 in 0.13μm CMOS ,which gives the best figure of merit and performance. Keywords: LNA, CMOS, noise figure, resistive feedback, gm boosting, voltage gain boosting.
A 2.4 ghz cmos lna input matching design using resistive feedback topology in...eSAT Publishing House
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
DESIGN AND NOISE OPTIMIZATION OF RF LOW NOISE AMPLIFIER FOR IEEE STANDARD 802...VLSICS Design
Low noise amplifier is the front end block of radio-frequency receiver system. Its design required various characteristics such as power gain, noise figure, insertion losses and power consumption. In this paper we have proposed a single stage low noise amplifier design with high gain and low noise using inductive source degeneration topology for frequency range of 3 GHz to 7 GHz and also use the active biasing devices. A range of devices like inductors and capacitors are used to achieve 50 Ω input impedance with a low noise factor. The design process is simulated process is using Advance Design System (ADS) and implemented in TSMC 0.18 µm CMOS technology. A single stage low noise amplifier has a measured forward gain 25.4 dB and noise figure 2.2 dB at frequency 5.0 GHz.
Design and Simulation of Low Noise Amplifiers at 180nm and 90nm TechnologiesIJERA Editor
With continued process scaling, CMOS has become a viable technology for the design of high-performance low noise amplifiers (LNAs) in the radio frequency (RF) regime. This thesis presents design and simulation of LNA at 180nm and 90nm technology. The LNA function is used to amplify signals without adding noise. The work is done on Cadence Virtuoso platform and the performance parameters like transient response and Noise figure are simulated and plotted. A supply voltage of just 5mV is used here. The noise figure at 180nm is found to be 259.722mdB at 1.04502GHz and The noise figure at 90nm is found to be 183.21mdB at 1.157GHz. 1.04502GHz and 1.157GHz are the peak frequency obtained from the frequency response of the Low noise amplifier. It is observed that the noise figure varies in each technology.
IOSR journal of VLSI and Signal Processing (IOSRJVSP) is an open access journal that publishes articles which contribute new results in all areas of VLSI Design & Signal Processing. The goal of this journal is to bring together researchers and practitioners from academia and industry to focus on advanced VLSI Design & Signal Processing concepts and establishing new collaborations in these areas.
Low Noise Amplifier at 2 GHz using the transistor NE85639 in ADSKarthik Rathinavel
• Systematically designed a LNA and its biasing using non-ideal components such as Microstrip TLs resistors, capacitors etc.
• Calculated the S parameters of the Transistor and simulated the gain and bandwidth to be 10 dB and 1 GHz respectively.
• Achieved a Noise Figure of 3.2 dB and s11 of -20 dB in the final design.
Power-Grid Load Balancing by Using Smart Home AppliancesValerio Aisa
Climate change is one of the greatest environmental, social and economic threats facing the planet, and can be mitigated by increasing the efficiency of the electric power generation and distribution system. Dynamic demand control is a low-cost technology that fosters better load balancing of the electricity grid, and thus enable savings on CO2 emissions at power plants. This paper discusses a practical and inexpensive solution for the implementation of dynamic demand control, based on a dedicated peripheral for a general-purpose microcontroller. Pre-production test of the peripheral has been carried out by emulating the actual microprocessor. Simulations have been carried out, to investigate actual efficacy of the proposed approach.
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
Differential Amplifiers in Bioimpedance Measurement Systems: A Comparison Bas...IDES Editor
In this paper we have analysed the Common Mode
Rejection Ratio (CMRR) for differential amplifiers used in
bioimpedance measurement systems and derived the complete
equations for the case when OPAMPs have finite differential
and common mode gains. In principle, passive ac-coupling
networks that include no grounded components have an
infinite CMRR, but they must provide a path for input bias
currents. The paper provides a novel approach as to how
component tolerances limit the CMRR and affect the transient
response of different networks. Experimental results and
various measurements support our theoretical predictions.
The best CMRR is obtained when the differential gain is
concentrated in the input stage, but it decreases at frequencies
above 1 kHz because of the reduced CMRR for the differential
stage at these frequencies.
Design and Realization of 2.4GHz Branch-line CouplerQuang Binh Pham
In the scope of this paper, a branch-line coupler working at 2.4GHz is designed and realized. The experiment results are consequently compared to the simulation results.
A New Ultra Low-Power and Noise Tolerant Circuit Technique for CMOS Domino LogicIDES Editor
Dynamic logic style is used in high performance
circuit design because of its fast speed and less transistors
requirement as compared to CMOS logic style. But it is not
widely accepted for all types of circuit implementations due
to its less noise tolerance and charge sharing problems. A
small noise at the input of the dynamic logic can change the
desired output. Domino logic uses one static CMOS inverter
at the output of dynamic node which is more noise immune
and consuming very less power as compared to other proposed
circuit. In this paper we have proposed a novel circuit for
domino logic which has less noise at the output node and has
very less power-delay product (PDP) as compared to previous
reported articles. Low PDP is achieved by using semi-dynamic
logic buffer and also reducing leakage current when PDN is
not conducting. This paper also analyses the PDP of the circuit
at very low voltage and different W/L ratio of the transistors.
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
The Analysis of Dead Time on Switching Loss in High and Low Side MOSFETs of Z...IDES Editor
This work is about the analysis of dead time variation
on switching losses in a Zero Voltage Switching (ZVS)
synchronous buck converter (SBC) circuit. In high frequency
converter circuits, switching losses are commonly linked with
high and low side switches of SBC circuit. They are activated
externally by the gate driver circuit. The duty ratio, dead time
and resonant inductor are the parameters that affect the
efficiency of the circuit. These variables can be adjusted for
the optimization purposes. The study primarily focuses on
varying the settings of input pulses of the MOSFETs in the
resonant gate driver circuit which consequently affects the
performance of the ZVS synchronous buck converter circuit.
Using the predetermined inductor of 9 nH, the frequency is
maintained at 1 MHz for each cycle transition. The switching
loss graph is obtained and switching losses for both S1 and S2
are calculated and compared to the findings from previous
work. It has shown a decrease in losses by 13.8 % in S1. A dead
time of 15 ns has been determined to be optimized value in
the SBC design.
A 2.4 ghz cmos lna input matching design using resistive feedback topology in...eSAT Journals
Abstract The attempt made in the paper shows an innovative designing for the enhancement and reliability in CMOS technology. A 2.4 GHz resistive feedback narrowband noise amplifier (LNA) using a series inductor input matching networks. It is easy reliable with an extra gm boosting as well as inductively degenerated topology. By using this resistive feedback topology increases the gain as well as noise figure of 2.2 dB,S21 parameter of 26dB,and IIP3 of -13dBm,while 2.8mW of power consuming from a 1.2V and its area 0.6mm2 in 0.13μm CMOS ,which gives the best figure of merit and performance. Keywords: LNA, CMOS, noise figure, resistive feedback, gm boosting, voltage gain boosting.
A 2.4 ghz cmos lna input matching design using resistive feedback topology in...eSAT Publishing House
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
DESIGN AND NOISE OPTIMIZATION OF RF LOW NOISE AMPLIFIER FOR IEEE STANDARD 802...VLSICS Design
Low noise amplifier is the front end block of radio-frequency receiver system. Its design required various characteristics such as power gain, noise figure, insertion losses and power consumption. In this paper we have proposed a single stage low noise amplifier design with high gain and low noise using inductive source degeneration topology for frequency range of 3 GHz to 7 GHz and also use the active biasing devices. A range of devices like inductors and capacitors are used to achieve 50 Ω input impedance with a low noise factor. The design process is simulated process is using Advance Design System (ADS) and implemented in TSMC 0.18 µm CMOS technology. A single stage low noise amplifier has a measured forward gain 25.4 dB and noise figure 2.2 dB at frequency 5.0 GHz.
Design and Simulation of Low Noise Amplifiers at 180nm and 90nm TechnologiesIJERA Editor
With continued process scaling, CMOS has become a viable technology for the design of high-performance low noise amplifiers (LNAs) in the radio frequency (RF) regime. This thesis presents design and simulation of LNA at 180nm and 90nm technology. The LNA function is used to amplify signals without adding noise. The work is done on Cadence Virtuoso platform and the performance parameters like transient response and Noise figure are simulated and plotted. A supply voltage of just 5mV is used here. The noise figure at 180nm is found to be 259.722mdB at 1.04502GHz and The noise figure at 90nm is found to be 183.21mdB at 1.157GHz. 1.04502GHz and 1.157GHz are the peak frequency obtained from the frequency response of the Low noise amplifier. It is observed that the noise figure varies in each technology.
IOSR journal of VLSI and Signal Processing (IOSRJVSP) is an open access journal that publishes articles which contribute new results in all areas of VLSI Design & Signal Processing. The goal of this journal is to bring together researchers and practitioners from academia and industry to focus on advanced VLSI Design & Signal Processing concepts and establishing new collaborations in these areas.
Low Noise Amplifier at 2 GHz using the transistor NE85639 in ADSKarthik Rathinavel
• Systematically designed a LNA and its biasing using non-ideal components such as Microstrip TLs resistors, capacitors etc.
• Calculated the S parameters of the Transistor and simulated the gain and bandwidth to be 10 dB and 1 GHz respectively.
• Achieved a Noise Figure of 3.2 dB and s11 of -20 dB in the final design.
Power-Grid Load Balancing by Using Smart Home AppliancesValerio Aisa
Climate change is one of the greatest environmental, social and economic threats facing the planet, and can be mitigated by increasing the efficiency of the electric power generation and distribution system. Dynamic demand control is a low-cost technology that fosters better load balancing of the electricity grid, and thus enable savings on CO2 emissions at power plants. This paper discusses a practical and inexpensive solution for the implementation of dynamic demand control, based on a dedicated peripheral for a general-purpose microcontroller. Pre-production test of the peripheral has been carried out by emulating the actual microprocessor. Simulations have been carried out, to investigate actual efficacy of the proposed approach.
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
Differential Amplifiers in Bioimpedance Measurement Systems: A Comparison Bas...IDES Editor
In this paper we have analysed the Common Mode
Rejection Ratio (CMRR) for differential amplifiers used in
bioimpedance measurement systems and derived the complete
equations for the case when OPAMPs have finite differential
and common mode gains. In principle, passive ac-coupling
networks that include no grounded components have an
infinite CMRR, but they must provide a path for input bias
currents. The paper provides a novel approach as to how
component tolerances limit the CMRR and affect the transient
response of different networks. Experimental results and
various measurements support our theoretical predictions.
The best CMRR is obtained when the differential gain is
concentrated in the input stage, but it decreases at frequencies
above 1 kHz because of the reduced CMRR for the differential
stage at these frequencies.
Design and Realization of 2.4GHz Branch-line CouplerQuang Binh Pham
In the scope of this paper, a branch-line coupler working at 2.4GHz is designed and realized. The experiment results are consequently compared to the simulation results.
A New Ultra Low-Power and Noise Tolerant Circuit Technique for CMOS Domino LogicIDES Editor
Dynamic logic style is used in high performance
circuit design because of its fast speed and less transistors
requirement as compared to CMOS logic style. But it is not
widely accepted for all types of circuit implementations due
to its less noise tolerance and charge sharing problems. A
small noise at the input of the dynamic logic can change the
desired output. Domino logic uses one static CMOS inverter
at the output of dynamic node which is more noise immune
and consuming very less power as compared to other proposed
circuit. In this paper we have proposed a novel circuit for
domino logic which has less noise at the output node and has
very less power-delay product (PDP) as compared to previous
reported articles. Low PDP is achieved by using semi-dynamic
logic buffer and also reducing leakage current when PDN is
not conducting. This paper also analyses the PDP of the circuit
at very low voltage and different W/L ratio of the transistors.
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
IOSR Journal of Electronics and Communication Engineering(IOSR-JECE) is an open access international journal that provides rapid publication (within a month) of articles in all areas of electronics and communication engineering and its applications. The journal welcomes publications of high quality papers on theoretical developments and practical applications in electronics and communication engineering. Original research papers, state-of-the-art reviews, and high quality technical notes are invited for publications.
The Approach on Influence of Biasing Circuit in Wideband Low Noise Amplifier ...IJEACS
This proposed work investigates the effects of biasing
circuit in the ultra-wideband microwave low noise amplifier
which operates between 3GHz to 10GHz. The complete circuit is
visualized the importance of every component in the design with
respect to linear measurements like Gain, Noise Figure, Return
loss under unconditionally stable condition. The design and
realization are made by using Hybrid Microwave integrated
circuit in AWR microwave office. The thing that is absolutely
necessary and frequently the difficult step in the design of an
LNA is 'biasing circuit design'. The difficulty situation arises
because traditional methods LNA by using S-parameters data
files in EDA tools provides almost all linear measurements.
Hence a number of time consuming iterations of different biasing
circuits with optimization methods may be required to reach
targeted specifications with the fixed operating point at the
desired points in the load line. Considering this behavior, various
alternate biasing circuit schemes are prepared and founded the
results associated with it. Furthermore, this paper unmistakably
clarifies the impacts of the biasing circuit by utilizing
intermodulation and harmonics distortion technique for
portrayal characterization. Different cases and sorts of the
biasing circuits with various biasing focuses have been tested and given clear perspective of the biasing ideas.
Optimization of Cmos 0.18 µM Low Noise Amplifier Using Nsga-Ii for UWB Applic...VLSICS Design
A design and optimization of 3-5 GHz single ended Radio Frequency (RF) Low Noise Amplifier (LNA) for
ultra-wide-band (UWB) applications using standard UMC 0.18 μm CMOS technology is reported.
Designing of RF circuit components is a challenging job, since even after performing lengthy calculations
and finding parameter values it is less guarantee that the design performs as expected. In view of this the
optimization tool; Elitist Non-Dominated Sorting Genetic Algorithm (NSGA-II); has been employed to get
the optimized starting values of components in the proposed LNA design. The obtained NSGA-II
parameters were simulated using Cadence Spectre- RF simulator. The designed Low Noise Amplifier
achieves a power gain of 22 dB and a minimum Noise Figure of 3 dB is achieved. It dissipates 12.5 mW of
power out of 1.8 V supply.
OPTIMIZATION OF CMOS 0.18 M LOW NOISE AMPLIFIER USING NSGA-II FOR UWBVLSICS Design
A design and optimization of 3-5 GHz single ended Radio Frequency (RF) Low Noise Amplifier (LNA) for ultra-wide-band (UWB) applications using standard UMC 0.18 µm CMOS technology is reported. Designing of RF circuit components is a challenging job, since even after performing lengthy calculations and finding parameter values it is less guarantee that the design performs as expected. In view of this the optimization tool; Elitist Non-Dominated Sorting Genetic Algorithm (NSGA-II); has been employed to get the optimized starting values of components in the proposed LNA design. The obtained NSGA-II parameters were simulated using Cadence Spectre- RF simulator. The designed Low Noise Amplifier achieves a power gain of 22 dB and a minimum Noise Figure of 3 dB is achieved. It dissipates 12.5 mW of power out of 1.8 V supply
Design and Implementation of a Low Noise Amplifier for Ultra Wideband Applica...IOSRJVSP
This paper represents the design and implementation of Low Noise Amplifier for Ultra wideband application using 0.18μm CMOS Technology. The proposed two stage LNA is for a 3-5 GHz. At supply voltage of 1.8V, for the exceed limit of 50μm of width of each transistor, the power consumption is 7.22mW. Noise figure is 4.33dB, Maximum power gain i.e. S21 is 20.4dB, S12 < -20dB, S11 < -8dB, S22 < -10dB. For the required bandwidth range, LNA is unconditionally stable and have good linearity
MULTISIM DESIGN AND SIMULATION OF 2.2GHz LNA FOR WIRELESS COMMUNICATIONVLSICS Design
This paper presents the work done on the design and simulation of a high frequency low noise amplifier for wireless communication. The purpose of the amplifier is to amplify the received RF path of a wireless network. With high gain, high sensitivity and low noise using Bipolar Junction transistor (BJT). The design methodology requires analysis of the transistor for stability, proper matching, network selection and fabrication. The BJT transistor was chosen for the design of the LNA due to its low noise and good gain at high frequency. These properties were confirmed using some measurement techniques including Network Analyzer, frequency analyzer Probe and Oscilloscope for the simulation and practical testing of the amplifier to verify the performance of the designed High frequency Low noise amplifier. The design goals of noise figure of 0.52dB-0.7dB and bias conditions are Vcc = 3.5 V and Icc= 55 mA to produce 16.8 dB gain across the 0.4–2.2GHz band.
Multisim design and simulation of 2.2 g hz lna for wireless communicationVLSICS Design
This paper presents the work done on the design and simulation of a high frequency low noise amplifier for
wireless communication. The purpose of the amplifier is to amplify the received RF path of a wireless
network. With high gain, high sensitivity and low noise using Bipolar Junction transistor (BJT). The design
methodology requires analysis of the transistor for stability, proper matching, network selection and
fabrication. The BJT transistor was chosen for the design of the LNA due to its low noise and good gain at
high frequency. These properties were confirmed using some measurement techniques including Network
Analyzer, frequency analyzer Probe and Oscilloscope for the simulation and practical testing of the
amplifier to verify the performance of the designed High frequency Low noise amplifier. The design goals
of noise figure of 0.52dB-0.7dB and bias conditions are Vcc = 3.5 V and Icc= 55 mA to produce 16.8 dB
gain across the 0.4–2.2GHz band.
Ultra-low power 0.45 mW 2.4 GHz CMOS low noise amplifier for wireless sensor ...journalBEEI
This paper describes the design topology of a ultra-low power low noise amplifier (LNA) for wireless sensor network (WSN) application. The proposed design of ultra-low power 2.4 GHz CMOS LNA is implemented using 0.13-μm Silterra technology. The LNA benefits of low power from forward body bias technique for first and second stages. Two stages are implemented in order to enhance the gain while obtaining low power consumption for overall circuit. The simulation results show that the total power consumed is only 0.45 mW at low supply voltage of 0.55 V. The power consumption is decreased about 36% as compared with the previous work. A gain of 15.1 dB, noise figure (NF) of 5.9 dB and input third order intercept point (IIP3) of -2 dBm are achieved. The input return loss (S11) and the output return loss (S22) is -17.6 dB and -12.3 dB, respectively. Meanwhile, the calculated figure of merit (FOM) is 7.19 mW-1.
The design & simulation of low noise amplifier for 1 2.8 ghz using aln s...eSAT Journals
Abstract In this paper, we have designed low noise amplifier using 2 stage Cascade topology. We have focused on intermediate matching network design of amplifier for low noise figure and selection of transistor PHEMT is based on noise figure as well as quiescent point required for 0 grid voltage so that amplifier will need only single DC supply i.e. Vdd. Depends upon different topologies used for LNA design with wide band requirement, we chose cascaded topology for good gain with low noise amplifier and optimized for greater bandwidth. Practical inductors are bulky as well as counter intuitive elements for high frequency as they behave as capacitors and to reduce S11. Several windings in inductors make them resistive which increases noise by 0.2-0.4 dB. So we proposed inductor-less input matching network for both stages so that we can increase bandwidth as well as perfect match for low noise figure. This LNA is designed using Advanced Design System (ADS) software to provide 0.5 dB noise figure with power gain of 25 dB and 1-2.5 GHz Bandwidth. So it can be used an L-Band satellite modem that is used in an asset tracking application. Layout is designed using muruta manufacturing lumped components and Aluminum Nitride (AlN) substrate having high dielectric constant and high thermal conductivity. Key Words: LNA, PHEMT, ADS, AlN
This paper gives a step-by-step of the design, simulation and measurement of a Power Amplifier(PA) operating frequency from 2.5GHz to 4.5GHz. The design of Class A Power amplifier was performed in Agilent ADS and the performance was tested with SZA3044Z BJT
Design consideration in low dropout voltage regulator for batteryless power m...journalBEEI
Harvesting energy from ambient Radio Frequency (RF) source is a great deal toward batteryless Internet of Thing (IoT) System on Chip (SoC) application as green technology has become a future interest. However, the harvested energy is unregulated thus it is highly susceptible to noise and cannot be used efficiently. Therefore, a dedicated low noise and high Power Supply Ripple Rejection (PSRR) of Low Dropout (LDO) voltage regulator are needed in the later stages of system development to supply the desired load voltage. Detailed analysis of the noise and PSRR of an LDO is not sufficient. This work presents a design of LDO to generate a regulated output voltage of 1.8V from 3.3V input supply targeted for 120mA load application. The performance of LDO is evaluated and analyzed. The PSRR and noise in LDO have been investigated by applying a low-pass filter. The proposed design achieves the design specification through the simulation results by obtaining 90.85dB of open-loop gain, 76.39º of phase margin and 63.46dB of PSRR respectively. The post-layout simulation shows degradation of gain and maximum load current due to parasitic issue. The measurement of maximum load regulation is dropped to 96mA compared 140mA from post-layout. The proposed LDO is designed using 180nm Silterra CMOS process technology.
A 10 d bm 25 dbm, 0.363 mm2 two stage 130 nm rf cmos power amplifierVLSICS Design
This paper proposes a 2.4 GHz RF CMOS Power amplifi
er and variation in its main performance
parameters i.e, output power, S-parameters and powe
r added efficiency with respect to change in supply
voltage and size of the power stage transistor. The
supply voltage was varied form 1 V to 5 V and the
range
of output power at 1dB compression point was found
to be from 10.684 dBm to 25.08 dBm respectively.
The range of PAE is 16.65 % to 48.46 %. The width o
f the power stage transistor was varied from 150 μm
to 500 μm to achieve output power of range 15.47 dB
m to 20.338 dBm. The range of PAE obtained here is
29.085 % to 45.439 %. The total dimension of the la
yout comes out to be 0.714 * 0.508 mm
2
.
1. M.A. Othman, M.M. Ismail, H.A. Sulaiman, M.H. Misran, M.A. Meor Said / International
Journal of Engineering Research and Applications (IJERA) ISSN: 2248-9622
www.ijera.com Vol. 2, Issue4, July-August 2012, pp.2055-2059
LC Matching Circuit Technique For 2.4 Ghz LNA Using AVAGO
ATF-54143
M.A. Othman, M.M. Ismail, H.A. Sulaiman, M.H. Misran, M.A. Meor Said
Centre for Telecommunication Research and Innovation (CeTRi)
Fakulti Kej. Elektronik dan Kej. Komputer
Universiti Teknikal Malaysia Melaka
76100 Durian Tunggal, Melaka, Malaysia
ABSTRACT
This paper presents the design, design and transistor. It can amplify small signal at operating
simulates a single stage LNA circuit with high frequency around 2 GHz. Thus, it meets our
gain and low noise using NPN Epitaxial for requirement to design a LNA at 2.4 GHz. Besides
frequency range of 2.4GHz. The design simulation that, ATF 54143 can perform with low voltage
process is using Advance Design Simulation supplied.
(ADS) and performance of each microwave Before start designing, the design
receiver there is Low Noise Amplifier (LNA) requirement is set in order to ensure our LNA
circuit. This amplifier exhibits a quality factor of designed can achieve the target.
the receiver. When this amplifier is biased for low i. Operating range = 2.0 to 3.0 Ghz
noise figure, requires the trade-off many ii. Gain > 12 dB
importance characteristics such as gain, Noise iii. Noise Figure < 2.5 dB
Figure (NF), stability, power consumption and iv. Return loss for source > 10 dB
complexity. Besides its excellent noise v. Return loss for load > 10 dB
performance, this is the highest frequency vi. Power supply = 5V
amplifier ever reported using three terminal
devices.
Keywords - Low Noise Amplifier, Lumped
Elements Matching, Power gain, Noise Figure,
Unilateral
I. INTRODUCTION
The function of low noise amplifier (LNA)
is to amplify low-level signals with maintain a very
low noise. Additionally, for large signal levels, the
low noise amplifier will amplified the received Figure 1: Equivalent circuit of ATF 54143 from
signal without introducing any noise, hence AVAGO
eliminating channel interference. A low noise
amplifier function plays an undisputed importance in II. LNA DESIGN
the receiver. Transistor must be biased at appropriate
Low Noise Amplifier (LNA) plays a crucial operating point before used. So that, transistor can
role in the receiver designs. LNA is located at the work under values required and achieve less power
first stage of microwave receiver and it has dominant consumption. In this project, passive biasing method
effect on the noise performance of the overall is adopted. The component readings are determined
system. It amplifies extremely low signals without with reference from datasheet.
adding noise, thus the Signal-to-Noise Ratio (SNR) By referring datasheet, data of Vds = 3V and Ids
of the system is preserved. In LNA design, it is = 60mA had be chosen because it is believed can
necessary to compromise its simultaneous give optimum values in gain and noise figure
requirements for high gain, low noise figure, With Vgs = 0.52, IBB=2m, Vds = 3V and Ids =
stability, good input and output matching . The LNA 60mA,
design in this report is carried out with a systematic
procedure and simulated by Advanced Design
System (ADS2008).Microwave Amplifier Design.
In this project, ATF 54143 transistor is
chosen in designing low pass amplifier. It is because
AT-54143 is a high dynamic range, low noise
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2. M.A. Othman, M.M. Ismail, H.A. Sulaiman, M.H. Misran, M.A. Meor Said / International
Journal of Engineering Research and Applications (IJERA) ISSN: 2248-9622
www.ijera.com Vol. 2, Issue4, July-August 2012, pp.2055-2059
= 56.43 = 17.52 dB
Transducer gain, GT
Stability Consideration
The stability of an amplifier or its
resistance to oscillate is an important consideration
in a design. It can be determined from the S
parameters. Oscillation occurs when > 1 or
> 1.This is due to the dependence of and on
the source and load matching networks. An amplifier
Figure 2: DC biasing Circuit is said to be unconditionally stable if the auxiliary
condition along with Rollet’s condition, defined as in
The R1, R4 and R3 in circuit are slightly adjusted equations below, are simultaneously satisfied.
from calculation readings in order to obtain better
Vds and Ids reading in the simulation.
Given
From the data sheet, S parameter at 2.5 GHz is: (8)
K = 1.11478 > 1 = 0.3427 < 1
Noise Figure
Besides the stability and gain requirement,
noise figure is another important consideration for a
microwave amplifier. In receiver applications, it
often required preamplifier with as low noise figure
The reflection coefficient to source, ГS and as possible as it has dominant effect on the noise
reflection coefficient to load, ГL. The equation is performance of the system. From the ATF-54143
shown in (1) and (2). datasheet, Fmin = 0.52, = 0.26 and RN/Zo = 0.04
at 2.4 GHz at 2.4 GHz (There are not reference for
2.5 GHz)
Figure. 3: The General Transistor Amplifier
.
Circuit.
= 0.52
Reflection coefficient at the load:
NF = 2.769 dB
Matching Network
The impedance matching basic idea is
presented in Fig. 2, which ensembles that an
impedance matching network placed between the
Since given ZL = ZS = Zo = 50Ω, the ГL and ГS load impedance and transmission line.Matching
calculated as zero. Reflection coefficient at the input network is made to ideally avoid the unnecessary
and output: loss power. There are variety of factors that needed
to be considered in the matching network selection
e.g. complexity, implementation and adjustability. In
this paper, the LNA is designed by using lumped
elements matching and quarter-wave transformer
matching techniques.
Power gain, G
Figure 4: Impedance Matching Network
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3. M.A. Othman, M.M. Ismail, H.A. Sulaiman, M.H. Misran, M.A. Meor Said / International
Journal of Engineering Research and Applications (IJERA) ISSN: 2248-9622
www.ijera.com Vol. 2, Issue4, July-August 2012, pp.2055-2059
III. RESULTS AND DISCUSSIONS
A. Before Matching
Figure 5: Circuit before matching
Figure 6: Output load matching
The parameters of noise figure, stability
factor, return loss and gain values are calculated by The components reading designed by ADS
using equations (1 to 9). While simulation results software are not exist in market. Thus, to fabricate, it
before the matching are listed as in Table 1. must change to actual values.
Parameters Calculated Simulation
0
0
1.1478 0.97
17.52 dB 17.25 dB
15.65 dB 15.31 dB
15.58 dB 15.76 dB
15.58 dB 15.63 dB
NF 2.769 dB 0.375 dB LC
Table 1: Results differences in calculated and matching
simulation before applying matching network. circuit
B. After Matching
To match both impedance of input and
output. Lumped elements matching is added into
LNA circuit with assistance of smith chart utility in Figure 5: Circuit after matching
AdS software. After matching from smitch chart, the
Lumped elements circuit will automatical generated.
m2 m3
freq=2.400GHz freq=2.400GHz
dB(S12)=-23.066 dB(S21)=17.333
Forward and Reverse Trans., dB
19 -22.5
18 m2
m3 -23.0
dB(S12)
dB(S21)
17
-23.5
16
-24.0
15
14 -24.5
2.0 2.2 2.4 2.6 2.8 3.0
freq, GHz
Figure 6: S12 (isolation) and S21 (gain)
Figure 5: Input source matching
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4. M.A. Othman, M.M. Ismail, H.A. Sulaiman, M.H. Misran, M.A. Meor Said / International
Journal of Engineering Research and Applications (IJERA) ISSN: 2248-9622
www.ijera.com Vol. 2, Issue4, July-August 2012, pp.2055-2059
0 m4 The gain is also an important factor in
freq=2.400GHz designing LNA for use in amplifier design.
-5 dB(S(1,1))=-10.077
m4 Maximum available gain is a figure of merit for the
dB(S(1,1))
-10 LNA, which indicates the maximum theoretical
-15 power gain when it is conjugate matched to its
-20
source and load impedances. The calculated gain is
17.52 dB compared to the simulated gain which is
-25
2.0 2.2 2.4 2.6 2.8 3.0
17.25, the calculated and simulated power gain show
freq, GHz almost the same result. The matching network of
Figure 7: S11freq
(dB) dB(S(1,1))
amplifier design is measured by the tranducer power
2.000 GHz -14.042 gain where it can be defined as separate effective
2.100 GHz -20.441
2.200 GHz
m5 -17.531 gain for input (source) matching network, transistor
2.300 GHz -12.876 and the output matching network.
-5 2.400 freq= 2.400GHz
GHz -10.077
2.500 dB(S(2,2))=-10.442
GHz -8.269 An LNA is a design that minimizes the
2.600 GHz
m5 -7.017
-10 2.700
2.800
GHz
GHz
-6.106
-5.420
noise figure of the system by matching the device to
dB(S(2,2))
2.900
3.000
GHz
GHz
-4.887
-4.465
its noise matching impedance, or Gamma optimum.
-15
Gamma optimum occurs at impedance where the
-20
noise of the device is terminated. All devices exhibit
noise energy. To minimize the noise as seen from
-25 the output port, we need to match the input load to
2.0 2.2 2.4 2.6 2.8 3.0
the conjugate noise impedance of the device.
freq, GHz Otherwise, the noise will be reflected back from the
Figure 8: S22 (dB)
freq dB(S(2,2)) load to the device and amplified. The noise figure
2.000 GHz -5.472 passes the requirements. It can be observed that the
2.100 GHz -6.497
0.70 2.200 GHz -7.699 calculated noise figure and the simulated noise
2.300 GHz -9.027
0.65 2.400 GHz -10.442 figure is not the same. This is because the input and
2.500 GHz -11.918 output port of the network is not matched.
0.60 2.600 m8
GHz -13.445
0.55
2.700
2.800
GHz 2.400GHz
freq=
GHz
-15.022
-16.658
For the result obtained from the simulation, the
nf(2)=0.478
NFmin
power gain is 17.25dB and the noise figure is
nf(2)
2.900 GHz m8 -18.367
0.50 3.000 GHz -20.166
0.382dB, while the return loss for source and return
0.45
m7 loss for load is -10.077dB and -10.442dB
0.40 m7 respectively. The results obtained from the LNA
0.35 freq= 2.400GHz
NFmin=0.382 simulation have achieved the requirements that have
0.30
been set.
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Filter matching can be included into the
freq, GHz designed circuit which is used at the output of
Figure: Minimum Noise Figure (NFmin), Noise transistor method. This is used to eliminate gain at
Figure (nf2) high frequencies and increase the band of operation.
On the other hand, resistive loading is recommended
Parameters Before Matching After Matching to have at the input as the stability of circuit can be
-3.078 -10.077 dB improved. The matching procedures for input and
-28.530 -10.442 dB output have to be carried out simultaneously to
-25.438 -23.066dB ensure prefect matching is achieved.
14.960 17.333 dB
NFmin 0.382 0.382 IV. CONCLUSION
NF 0.375 0.478 A Low Noise Amplifier with given desired
K 1.004 1.004 characteristics was able to design. From the
Table 1: Results differences in calculated and comparison of the calculated and simulated result it
simulation after applying matching network. can be seen that there is a slight difference in values.
From the simulation result above, it is difficult to
The stability of this transistor is design a low noise amplifier that has both low noise
unconditionally stable at 2.5 GHz since its K figure and high gain together. So, it is very
constant is more than 1, which is 1.004 from the important to tolerate between the input and output
simulation. Therefore, no stability circle has to be matching in order to get the perfect match.
drawn. Stability and maximum available gain are
two of the more important considerations in ACKNOWLEDGEMENTS
choosing a two-port network LNA for use in Authors would like to thank Universiti
amplifier design. As used here, stability measures Teknikal Malaysia Melaka for their support in term
the tendency of an LNA to oscillate. of financing to this project and also to this journal.
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