This document summarizes the design, simulation, and measurement of a class A power amplifier operating from 2.5GHz to 4.5GHz for use in satellite transponders. The power amplifier was designed using a SZA3044Z BJT transistor in Agilent ADS. Stability and impedance matching networks were designed to maximize gain and minimize reflections. Measurements showed a gain of 26.4dB, input return loss better than -39.8dB, and output return loss better than -49.3dB, meeting most but not all specifications. While improvements are needed, the design process provided insight into challenges in high power amplifier design.
A Novel Configuration of A Microstrip Power Amplifier based on GaAs-FET for I...IJECEIAES
Power Amplifiers (PA) are very indispensable components in the design of numerous types of communication transmitters employed in microwave technology. The methodology is exemplified through the design of a 2.45GHz microwave power Amplifier (PA) for the industrial, scientific and medical (ISM) applications using microstrip technology. The main design target is to get a maximum power gain while simultaneously achieving a maximum output power through presenting the optimum impedance which is characteristically carried out per adding a matching circuit between the source and the input of the power amplifier and between the load and the output of the power amplifier. A "T" matching technique is used at the input and the output sides of transistor for assure in band desired that this circuit without reflections and to obtain a maximum power gain. The proposed power amplifier for microwave ISM applications is designed, simulated and optimized by employing Advanced Design System (ADS) software by Agilent. The PA shows good performances in terms of return loss, output power, power gain and stability; the circuit has an input return loss of -38dB and an output return loss of -33.5dB. The 1-dB compression point is 8.69dBm and power gain of the PA is 19.4dBm. The Rollet's Stability measure B1 and the stability factor K of the amplifier is greater than 0 and 1 respectively, which shows that the circuit is unconditionally stable. The total chip size of the PA is 73.5× 36 mm 2 .
Design of Wide-band Power Amplifier Based on Power Combiner Technique with Lo...IJECEIAES
RF power amplifiers are one of challenging blocks in designing radio frequency transceivers, this is due to non-linearity behavior of power amplifiers that leads to inter-modulation distortion. This paper presents the design of wide-band power amplifier which combined with parallel coupled line band pass filter at the input and output of power amplifier to allow the only required frequency band to pass through the power amplifier. Class-A topology and ATF-511P8 transistor are used in this design. Advanced Design System software used as a simulation tool to simulate the designed wideband power amplifier. The simulation results showed an input return loss (S11) which less than -10dB, and gain (S21) is higher than 10 dB over the entire frequency band and considers as flat as well. The designed amplifier is stable over the bandwidth (K>1). Inter-modulation distortion is -56.919dBc which is less than -50dBc with 10dBm input power. The designed amplifier can be used for the microwave applications which include weather radar, satellite communication, wireless networking, mobile, and TV.
The design & simulation of low noise amplifier for 1 2.8 ghz using aln s...eSAT Journals
Abstract In this paper, we have designed low noise amplifier using 2 stage Cascade topology. We have focused on intermediate matching network design of amplifier for low noise figure and selection of transistor PHEMT is based on noise figure as well as quiescent point required for 0 grid voltage so that amplifier will need only single DC supply i.e. Vdd. Depends upon different topologies used for LNA design with wide band requirement, we chose cascaded topology for good gain with low noise amplifier and optimized for greater bandwidth. Practical inductors are bulky as well as counter intuitive elements for high frequency as they behave as capacitors and to reduce S11. Several windings in inductors make them resistive which increases noise by 0.2-0.4 dB. So we proposed inductor-less input matching network for both stages so that we can increase bandwidth as well as perfect match for low noise figure. This LNA is designed using Advanced Design System (ADS) software to provide 0.5 dB noise figure with power gain of 25 dB and 1-2.5 GHz Bandwidth. So it can be used an L-Band satellite modem that is used in an asset tracking application. Layout is designed using muruta manufacturing lumped components and Aluminum Nitride (AlN) substrate having high dielectric constant and high thermal conductivity. Key Words: LNA, PHEMT, ADS, AlN
Abstract:
This paper reports on the design of an ultra wideband power amplifier using 0.25um GaN- HEMT Technology device obtained from the Triquint Semiconductor. There is huge interest in transistors based on Gallium Nitride in recent years due to its high breakdown voltage and its capability to operate in High frequency applications. The load pull analysis is carried out to obtain both the required source and load impedances. The
power amplifier with over 10W output power and 42% power added efficiency in the frequency range of 3-5GHz is presented in this paper. The PA is designed using a computer aided design tool called Advanced System Design (ADS).ADS provide two different simulation opportunities. These are referred as schematic simulation and
electromagnetic simulation called Momentum. Schematic Simulations are performed on the proposed PA in this paper.
Keywords:- GaN-HEMT Technology, Load pull analysis, Advanced system design(ADS)
Wideband power amplifier based on Wilkinson power divider for s-band satellit...journalBEEI
This paper presents design and simulation of wideband power amplifier based on multi-section Wilkinson power divider. Class-A topology and ATF-511P8 transistor have been used. Advanced Design System (ADS) software used to simulate the designed power amplifier. The simulation results show an input return loss (S11)<-10dB, gain (S21)>10 dB over the entire bandwidth, and an output power around 28dBm at the Centre frequency of 3GHz. The designed amplifier is stable over the entire bandwidth (K>1). Inter-modulation distortion is -65.187dBc which is less than -50dBc. The designed amplifier can be used for the microwave applications which include weather radar, satellite communication, wireless networking, mobile, and TV.
A Novel Design of a Microstrip Microwave Power Amplifier for DCS Application ...IJECEIAES
This paper presents a 1.80GHz class-A Microwave power amplifier (PA). The proposed power amplifier is designed with single-stage architecture. This power amplifier consists of a bipolar transistor and improved by Collector-Feedback Biasing fed with a single power supply. The aim of this work is to improve the performance of this amplifier by using simple stubs with 50Ω microstrip transmissions lines. The proposed PA is investigated and optimized by utilizing Advanced Design System (ADS) software. The simulation results show that the amplifier achieves a high power gain of 13dB, output power rise up to 21dBm and good impedances matching ;For the input reflection coefficient (S11) is below than - 46.39dB. Regarding the output reflection coefficient (S22) is below than -29.898dB, with an overall size of about 93 x 59mm². By the end; we find that this power amplifier offers an excellent performance for DCS applications.
A Novel Configuration of A Microstrip Power Amplifier based on GaAs-FET for I...IJECEIAES
Power Amplifiers (PA) are very indispensable components in the design of numerous types of communication transmitters employed in microwave technology. The methodology is exemplified through the design of a 2.45GHz microwave power Amplifier (PA) for the industrial, scientific and medical (ISM) applications using microstrip technology. The main design target is to get a maximum power gain while simultaneously achieving a maximum output power through presenting the optimum impedance which is characteristically carried out per adding a matching circuit between the source and the input of the power amplifier and between the load and the output of the power amplifier. A "T" matching technique is used at the input and the output sides of transistor for assure in band desired that this circuit without reflections and to obtain a maximum power gain. The proposed power amplifier for microwave ISM applications is designed, simulated and optimized by employing Advanced Design System (ADS) software by Agilent. The PA shows good performances in terms of return loss, output power, power gain and stability; the circuit has an input return loss of -38dB and an output return loss of -33.5dB. The 1-dB compression point is 8.69dBm and power gain of the PA is 19.4dBm. The Rollet's Stability measure B1 and the stability factor K of the amplifier is greater than 0 and 1 respectively, which shows that the circuit is unconditionally stable. The total chip size of the PA is 73.5× 36 mm 2 .
Design of Wide-band Power Amplifier Based on Power Combiner Technique with Lo...IJECEIAES
RF power amplifiers are one of challenging blocks in designing radio frequency transceivers, this is due to non-linearity behavior of power amplifiers that leads to inter-modulation distortion. This paper presents the design of wide-band power amplifier which combined with parallel coupled line band pass filter at the input and output of power amplifier to allow the only required frequency band to pass through the power amplifier. Class-A topology and ATF-511P8 transistor are used in this design. Advanced Design System software used as a simulation tool to simulate the designed wideband power amplifier. The simulation results showed an input return loss (S11) which less than -10dB, and gain (S21) is higher than 10 dB over the entire frequency band and considers as flat as well. The designed amplifier is stable over the bandwidth (K>1). Inter-modulation distortion is -56.919dBc which is less than -50dBc with 10dBm input power. The designed amplifier can be used for the microwave applications which include weather radar, satellite communication, wireless networking, mobile, and TV.
The design & simulation of low noise amplifier for 1 2.8 ghz using aln s...eSAT Journals
Abstract In this paper, we have designed low noise amplifier using 2 stage Cascade topology. We have focused on intermediate matching network design of amplifier for low noise figure and selection of transistor PHEMT is based on noise figure as well as quiescent point required for 0 grid voltage so that amplifier will need only single DC supply i.e. Vdd. Depends upon different topologies used for LNA design with wide band requirement, we chose cascaded topology for good gain with low noise amplifier and optimized for greater bandwidth. Practical inductors are bulky as well as counter intuitive elements for high frequency as they behave as capacitors and to reduce S11. Several windings in inductors make them resistive which increases noise by 0.2-0.4 dB. So we proposed inductor-less input matching network for both stages so that we can increase bandwidth as well as perfect match for low noise figure. This LNA is designed using Advanced Design System (ADS) software to provide 0.5 dB noise figure with power gain of 25 dB and 1-2.5 GHz Bandwidth. So it can be used an L-Band satellite modem that is used in an asset tracking application. Layout is designed using muruta manufacturing lumped components and Aluminum Nitride (AlN) substrate having high dielectric constant and high thermal conductivity. Key Words: LNA, PHEMT, ADS, AlN
Abstract:
This paper reports on the design of an ultra wideband power amplifier using 0.25um GaN- HEMT Technology device obtained from the Triquint Semiconductor. There is huge interest in transistors based on Gallium Nitride in recent years due to its high breakdown voltage and its capability to operate in High frequency applications. The load pull analysis is carried out to obtain both the required source and load impedances. The
power amplifier with over 10W output power and 42% power added efficiency in the frequency range of 3-5GHz is presented in this paper. The PA is designed using a computer aided design tool called Advanced System Design (ADS).ADS provide two different simulation opportunities. These are referred as schematic simulation and
electromagnetic simulation called Momentum. Schematic Simulations are performed on the proposed PA in this paper.
Keywords:- GaN-HEMT Technology, Load pull analysis, Advanced system design(ADS)
Wideband power amplifier based on Wilkinson power divider for s-band satellit...journalBEEI
This paper presents design and simulation of wideband power amplifier based on multi-section Wilkinson power divider. Class-A topology and ATF-511P8 transistor have been used. Advanced Design System (ADS) software used to simulate the designed power amplifier. The simulation results show an input return loss (S11)<-10dB, gain (S21)>10 dB over the entire bandwidth, and an output power around 28dBm at the Centre frequency of 3GHz. The designed amplifier is stable over the entire bandwidth (K>1). Inter-modulation distortion is -65.187dBc which is less than -50dBc. The designed amplifier can be used for the microwave applications which include weather radar, satellite communication, wireless networking, mobile, and TV.
A Novel Design of a Microstrip Microwave Power Amplifier for DCS Application ...IJECEIAES
This paper presents a 1.80GHz class-A Microwave power amplifier (PA). The proposed power amplifier is designed with single-stage architecture. This power amplifier consists of a bipolar transistor and improved by Collector-Feedback Biasing fed with a single power supply. The aim of this work is to improve the performance of this amplifier by using simple stubs with 50Ω microstrip transmissions lines. The proposed PA is investigated and optimized by utilizing Advanced Design System (ADS) software. The simulation results show that the amplifier achieves a high power gain of 13dB, output power rise up to 21dBm and good impedances matching ;For the input reflection coefficient (S11) is below than - 46.39dB. Regarding the output reflection coefficient (S22) is below than -29.898dB, with an overall size of about 93 x 59mm². By the end; we find that this power amplifier offers an excellent performance for DCS applications.
Vlsi implementation of a programmable low drop out voltage regulatoreSAT Journals
Abstract LDO voltage regulators compose a small subset of the power supply arena. Low-drop-out (LDO) voltage regulators are used in analog applications that generally require low noise and high accuracy power rails. Voltage regulators provide a constant voltage supply rail under certain loading conditions. Circuits that are not performing tasks are temporarily turned off lowering the overall power consumption. The LDO voltage regulator, therefore, must respond quickly to system demands and power up connected circuits. To motivate new aspect of power management towards a design of a low drop-out voltage regulator that fulfils the present industry requirements as well as the upcoming demands of the future, it becomes necessary to design the LDO regulator which gives overall performance. A low-voltage low-dropout regulator that uses an Vdd of 1 V to an output of 0.8–0.74 V, with 32-nm CMOS technology is proposed. By scaling down the technology, we can get lower power consumption. More emphasis is given on the compactness and low drop-out voltage. The latest power management unit concept inside the system on chip (Soc) scheme inspires the digital control potential for the design of a novel LDO regulator. A simple operational transconductance amplifier is used as the error amplifier (EA), with a current splitting technique which is able to boost the gain. In the rail-to-rail output stage of the EA, a power noise cancellation mechanism is adopted. Programmability is added by applying two external control signals. These advantages allow the proposed LDO regulator to achieve a 60-mV output variation for low load transient, area efficient architecture with low power consumption. Keywords: low drop-out,32nm,low power consumption, programmability
Design of 10 to 12 GHz Low Noise Amplifier for Ultrawideband (UWB) SystemIJECEIAES
Balanced amplifier is the structure proposed in this article, it provides better performance. In fact, the single amplifier meets the specification for noise figure and gain but fails to meet the return loss specification due to the large mis-matches on the input & outputs. To overcome this problem one solution is to use balanced amplifier topography. In this paper, a wide-band and highgain microwave balanced amplifier constituted with branch line coupler circuit is proposed. The amplifier is unconditionally stable in the band [9-13] GHz where the gain is about 20dB. The input reflection (S11) and output return loss (S22) at 11 GHz are -33.4dB and -33.5dB respectively.
Real Coded Genetic Algorithm Based Improvement of Efficiency in Interleaved B...IJPEDS-IAES
The reliability, efficiency, and controllability of Photo Voltaic power systems can be increased by embedding the components of a Boost Converter. Currently, the converter technology overcomes the main problems of manufacturing cost, efficiency and mass production. Issue to limit the life span of a Photo Voltaic inverter is the huge electrolytic capacitor across the Direct Current bus for energy decoupling. This paper presents a two-phase interleaved boost converter which ensures 180 angle phase shift between the two interleaved converters. The Proportional Integral controller is used to reshape that the controller attempts to minimize the error by adjusting the control inputs and also real coded genetic algorithm is proposed for tuning of controlling parameters of Proportional Integral controller. The real coded genetic algorithm is applied in the Interleaved Boost Converter with Advanced Pulse Width Modulation Techniques for improving the results of efficiency and reduction of ripple current. Simulation results illustrate the improvement of efficiency and the diminution of ripple current.
Sigma-Delta Analog-to-Digital converter (ADC), is widely used in portable electronic products. An operational
transconductance amplifier (OTA) is one of the most important components of ADC. This paper presents a
new design of two stages OTA. The design incorporates Sleep insertion technique and leakage feedback current
approach for improving design parameters such as gain, and power as compared to earlier work. The design is
simulated in 0.18µm CMOS technology with supply voltage 1.8V.
Switching pulse generation for DC-DC boost converter using Xilinx-ISE with FP...IJECEIAES
This paper explains steps to generate switching pulse using Xilinx-ISE with FPGA processor for DC-DC boost converter. The switching pulse generated using Very high speed integrated circuit Hardware Description Language (VHDL) with Xilinx-ISE. VHDL is a programming language, which is used to model and design any complex circuits in a dynamic environment. This paper gives the course of action for generation of switching pulses for dc-dc boost converter using Xilinx-ISE and matlab simulink. The switching pulse generated using Xilinx-ISE with FPGA-Spartan 6 processor compared with switching pulse generated using matlab.
JMV LPS Ltd Make in India Product for SolarPv,High Energy Storage and Electri...Mahesh Chandra Manav
JMV LPS Ltd Offer Electrical Safety Product for Solar PV ,High Energy Storage ,Electric Vehicle Charging Infra Earthing ,Lightning and Surge Protection ,AJB/DCDB, MC4 Connectors,
Useful Information for SECI,MNRE,NTPC,BHEL,NHPC,SVJN, State Electricity Board,State Power Generation Companies, State Renewable Power Generation Companies, Smart City Projects by States,Ministry of Power ,Ministry of Renewable,Discom Companies,Solar Power Developers,Solar EPC Companies Ground Mounted,Roof Top Projects, Indian Railways ,DMRC,
Impact of Positive Sequence Admittance and Negative Sequence Conductance of D...ijtsrd
Voltage fluctuations resulting from variable output power of renewable energy sources are strictly challenging power quality in distributed-generation systems. This paper presents a control method for distributed static synchronous compensator (D-STATCOM) to alleviate variation of both positive- and negative-sequence voltages. The D-STATCOM simultaneously operates as fundamental positive-sequence admittance and fundamental negative-sequence conductance to restore the positive sequence voltage to the nominal value as well as reduce the negative-sequence voltage to an allowable level. Both admittance and conductance are dynamically tuned to improve voltage regulation performances in response to load changes and power variation of renewable sources. A proportional“resonant current regulator with selectively harmonic compensation is realized to control the fundamental current of the D-STATCOM as well as reduce the harmonic current, which could be an advantage in practical applications due to high voltage distortion in low-voltage micro grids. Voltage-regulation performances are discussed for different D-STATCOM locations as well as different D-STATCOM currents. Computer simulations and laboratory tests validate effectiveness. CH. Venkata Krishna | N. S. Kalyan Chakravarthi"Impact of Positive Sequence Admittance and Negative Sequence Conductance of D-Statcom to Compensate Variations in Voltage Levels in Distributed Generation Systems" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-2 | Issue-1 , December 2017, URL: http://www.ijtsrd.com/papers/ijtsrd5919.pdf http://www.ijtsrd.com/engineering/electrical-engineering/5919/impact-of-positive-sequence-admittance-and-negative-sequence-conductance-of-d-statcom-to-compensate-variations-in-voltage-levels-in-distributed-generation-systems/ch-venkata-krishna
“INVESTIGATIONS ON LCL-T FILTER BASED TWO STAGE SINGLE PHASE GRID CONNECTED M...Dr.Raja R
Motivation to Research
Objectives of Research
Introduction
Literature Survey
Proposed System
Simulation Model of the Proposed System
Simulation Results and Discussion
Experimental Model of the Proposed System
Experimental Model Results and Discussion
Conclusion
Future Work
References
Vlsi implementation of a programmable low drop out voltage regulatoreSAT Journals
Abstract LDO voltage regulators compose a small subset of the power supply arena. Low-drop-out (LDO) voltage regulators are used in analog applications that generally require low noise and high accuracy power rails. Voltage regulators provide a constant voltage supply rail under certain loading conditions. Circuits that are not performing tasks are temporarily turned off lowering the overall power consumption. The LDO voltage regulator, therefore, must respond quickly to system demands and power up connected circuits. To motivate new aspect of power management towards a design of a low drop-out voltage regulator that fulfils the present industry requirements as well as the upcoming demands of the future, it becomes necessary to design the LDO regulator which gives overall performance. A low-voltage low-dropout regulator that uses an Vdd of 1 V to an output of 0.8–0.74 V, with 32-nm CMOS technology is proposed. By scaling down the technology, we can get lower power consumption. More emphasis is given on the compactness and low drop-out voltage. The latest power management unit concept inside the system on chip (Soc) scheme inspires the digital control potential for the design of a novel LDO regulator. A simple operational transconductance amplifier is used as the error amplifier (EA), with a current splitting technique which is able to boost the gain. In the rail-to-rail output stage of the EA, a power noise cancellation mechanism is adopted. Programmability is added by applying two external control signals. These advantages allow the proposed LDO regulator to achieve a 60-mV output variation for low load transient, area efficient architecture with low power consumption. Keywords: low drop-out,32nm,low power consumption, programmability
Design of 10 to 12 GHz Low Noise Amplifier for Ultrawideband (UWB) SystemIJECEIAES
Balanced amplifier is the structure proposed in this article, it provides better performance. In fact, the single amplifier meets the specification for noise figure and gain but fails to meet the return loss specification due to the large mis-matches on the input & outputs. To overcome this problem one solution is to use balanced amplifier topography. In this paper, a wide-band and highgain microwave balanced amplifier constituted with branch line coupler circuit is proposed. The amplifier is unconditionally stable in the band [9-13] GHz where the gain is about 20dB. The input reflection (S11) and output return loss (S22) at 11 GHz are -33.4dB and -33.5dB respectively.
Real Coded Genetic Algorithm Based Improvement of Efficiency in Interleaved B...IJPEDS-IAES
The reliability, efficiency, and controllability of Photo Voltaic power systems can be increased by embedding the components of a Boost Converter. Currently, the converter technology overcomes the main problems of manufacturing cost, efficiency and mass production. Issue to limit the life span of a Photo Voltaic inverter is the huge electrolytic capacitor across the Direct Current bus for energy decoupling. This paper presents a two-phase interleaved boost converter which ensures 180 angle phase shift between the two interleaved converters. The Proportional Integral controller is used to reshape that the controller attempts to minimize the error by adjusting the control inputs and also real coded genetic algorithm is proposed for tuning of controlling parameters of Proportional Integral controller. The real coded genetic algorithm is applied in the Interleaved Boost Converter with Advanced Pulse Width Modulation Techniques for improving the results of efficiency and reduction of ripple current. Simulation results illustrate the improvement of efficiency and the diminution of ripple current.
Sigma-Delta Analog-to-Digital converter (ADC), is widely used in portable electronic products. An operational
transconductance amplifier (OTA) is one of the most important components of ADC. This paper presents a
new design of two stages OTA. The design incorporates Sleep insertion technique and leakage feedback current
approach for improving design parameters such as gain, and power as compared to earlier work. The design is
simulated in 0.18µm CMOS technology with supply voltage 1.8V.
Switching pulse generation for DC-DC boost converter using Xilinx-ISE with FP...IJECEIAES
This paper explains steps to generate switching pulse using Xilinx-ISE with FPGA processor for DC-DC boost converter. The switching pulse generated using Very high speed integrated circuit Hardware Description Language (VHDL) with Xilinx-ISE. VHDL is a programming language, which is used to model and design any complex circuits in a dynamic environment. This paper gives the course of action for generation of switching pulses for dc-dc boost converter using Xilinx-ISE and matlab simulink. The switching pulse generated using Xilinx-ISE with FPGA-Spartan 6 processor compared with switching pulse generated using matlab.
JMV LPS Ltd Make in India Product for SolarPv,High Energy Storage and Electri...Mahesh Chandra Manav
JMV LPS Ltd Offer Electrical Safety Product for Solar PV ,High Energy Storage ,Electric Vehicle Charging Infra Earthing ,Lightning and Surge Protection ,AJB/DCDB, MC4 Connectors,
Useful Information for SECI,MNRE,NTPC,BHEL,NHPC,SVJN, State Electricity Board,State Power Generation Companies, State Renewable Power Generation Companies, Smart City Projects by States,Ministry of Power ,Ministry of Renewable,Discom Companies,Solar Power Developers,Solar EPC Companies Ground Mounted,Roof Top Projects, Indian Railways ,DMRC,
Impact of Positive Sequence Admittance and Negative Sequence Conductance of D...ijtsrd
Voltage fluctuations resulting from variable output power of renewable energy sources are strictly challenging power quality in distributed-generation systems. This paper presents a control method for distributed static synchronous compensator (D-STATCOM) to alleviate variation of both positive- and negative-sequence voltages. The D-STATCOM simultaneously operates as fundamental positive-sequence admittance and fundamental negative-sequence conductance to restore the positive sequence voltage to the nominal value as well as reduce the negative-sequence voltage to an allowable level. Both admittance and conductance are dynamically tuned to improve voltage regulation performances in response to load changes and power variation of renewable sources. A proportional“resonant current regulator with selectively harmonic compensation is realized to control the fundamental current of the D-STATCOM as well as reduce the harmonic current, which could be an advantage in practical applications due to high voltage distortion in low-voltage micro grids. Voltage-regulation performances are discussed for different D-STATCOM locations as well as different D-STATCOM currents. Computer simulations and laboratory tests validate effectiveness. CH. Venkata Krishna | N. S. Kalyan Chakravarthi"Impact of Positive Sequence Admittance and Negative Sequence Conductance of D-Statcom to Compensate Variations in Voltage Levels in Distributed Generation Systems" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-2 | Issue-1 , December 2017, URL: http://www.ijtsrd.com/papers/ijtsrd5919.pdf http://www.ijtsrd.com/engineering/electrical-engineering/5919/impact-of-positive-sequence-admittance-and-negative-sequence-conductance-of-d-statcom-to-compensate-variations-in-voltage-levels-in-distributed-generation-systems/ch-venkata-krishna
“INVESTIGATIONS ON LCL-T FILTER BASED TWO STAGE SINGLE PHASE GRID CONNECTED M...Dr.Raja R
Motivation to Research
Objectives of Research
Introduction
Literature Survey
Proposed System
Simulation Model of the Proposed System
Simulation Results and Discussion
Experimental Model of the Proposed System
Experimental Model Results and Discussion
Conclusion
Future Work
References
Television Program Development - Charting New PathsChelse Benham
How to create greater diversity in public broadcasting involving the cooperation and partnership with a Hispanic Serving Institution and its regional PBS Station
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
LOW POWER SI CLASS E POWER AMPLIFIER AND RF SWITCH FOR HEALTH CAREieijjournal1
This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um
Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software.
And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate
goal for such application is to reach high performance and low cost, and between high performance and
low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and
RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can
transmit 16dBm output power to a 50Ω load. The performance of the power amplifier and switch meet the
specification requirements of the desired.
LOW POWER SI CLASS E POWER AMPLIFIER AND RF SWITCH FOR HEALTH CAREieijjournal
This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um
Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software.
And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate goal for such application is to reach high performance and low cost, and between high performance and low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and
RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can
transmit 16dBm output power to a 50Ω load. The performance of the power amplifier and switch meet the specification requirements of the desired.
LOW POWER SI CLASS E POWER AMPLIFIER AND RF SWITCH FOR HEALTH CAREieijjournal
This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um
Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software.
And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate
goal for such application is to reach high performance and low cost, and between high performance and
low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and
RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can
transmit 16dBm output power to a 50Ω load. The performance of the power amplifier and switch meet the
specification requirements of the desired
LOW POWER SI CLASS E POWER AMPLIFIER AND RF SWITCH FOR HEALTH CAREieijjournal
This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um
Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software.
And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate
goal for such application is to reach high performance and low cost, and between high performance and
low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can transmit 16dBm output power to a 50Ω load. The performance of the power amplifier and switch meet the specification requirements of the desired.
Low Power SI Class E Power Amplifier and Rf Switch for Health Careieijjournal1
This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software. And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate goal for such application is to reach high performance and low cost, and between high performance and low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can transmit 16dBm output power to a 50Ω load. The performance of the power amplifier and switch meet the specification requirements of the desired.
Review on Design and Performance Analysis of Low Power Transceiver Circuit in...iosrjce
IOSR Journal of Electronics and Communication Engineering(IOSR-JECE) is a double blind peer reviewed International Journal that provides rapid publication (within a month) of articles in all areas of electronics and communication engineering and its applications. The journal welcomes publications of high quality papers on theoretical developments and practical applications in electronics and communication engineering. Original research papers, state-of-the-art reviews, and high quality technical notes are invited for publications.
A Novel Configuration of a Microstrip Microwave Wideband Power Amplifier for ...TELKOMNIKA JOURNAL
RF/microwave power amplifier (PA) is one of the components that has a large effect on the
overall performance of communication system especially in transmitter system and their design is decided
by the parameters of transistor selected. This letter presents a new concept of a wide-band microwave
amplifier using scattering parameters that is often used in the radio frequency communication systemas an
application of the active integrated antenna[1- 2]. This power amplifier operates from 1.75 GHz to 2.15GHz
frequency and it is based on AT-41410 NPN transistor that has a high transition frequency of 10GHz. The
proposed Single Stage PA is designed by microstrip technology and simulated with Advanced Design
System (ADS) software. The simulation results indicate good performances; the small power gain (S21) is
changed between 11.8 and 10dB. For the input reflection coefficient (S11) is varied between -11 and -
22.5dB. Regarding the output reflection coefficient (S22) is varied between -13.1 and -18.7dB over the
wide frequency band of 1.75-2.15GHz and stability without oscillating over a wide range of frequencies.
Design of Ku-band power divider using Substrate Integrated Waveguide techniquejournalBEEI
A Ku-band Substrate Integrated Waveguide power divider is proposed. In this work, the SIW power divider is designed with T-junction configuration. The SIW technique enables the power divider to have low insertion loss, low cost and features uniplanar circuit. An additional of metallic via hole is added in the center of the junction to improve the return loss performance of the Tjunction SIW power divider. The simulated input return losses at port 1 are better than 27 dB, and features equal power division of about -3.1 dB ±0.4 dB at both output ports across frequency range of 13.5-18 GHz. The SIW power divider is fabricated, and the measurement results show acceptable performances. Since there are some losses contributed by the SMA connector of the fabricated SIW power divider prototype, an additional SIW transmission line is simulated and fabricated to analyze the connector loss.
A 10 d bm 25 dbm, 0.363 mm2 two stage 130 nm rf cmos power amplifierVLSICS Design
This paper proposes a 2.4 GHz RF CMOS Power amplifi
er and variation in its main performance
parameters i.e, output power, S-parameters and powe
r added efficiency with respect to change in supply
voltage and size of the power stage transistor. The
supply voltage was varied form 1 V to 5 V and the
range
of output power at 1dB compression point was found
to be from 10.684 dBm to 25.08 dBm respectively.
The range of PAE is 16.65 % to 48.46 %. The width o
f the power stage transistor was varied from 150 μm
to 500 μm to achieve output power of range 15.47 dB
m to 20.338 dBm. The range of PAE obtained here is
29.085 % to 45.439 %. The total dimension of the la
yout comes out to be 0.714 * 0.508 mm
2
.
The Approach on Influence of Biasing Circuit in Wideband Low Noise Amplifier ...IJEACS
This proposed work investigates the effects of biasing
circuit in the ultra-wideband microwave low noise amplifier
which operates between 3GHz to 10GHz. The complete circuit is
visualized the importance of every component in the design with
respect to linear measurements like Gain, Noise Figure, Return
loss under unconditionally stable condition. The design and
realization are made by using Hybrid Microwave integrated
circuit in AWR microwave office. The thing that is absolutely
necessary and frequently the difficult step in the design of an
LNA is 'biasing circuit design'. The difficulty situation arises
because traditional methods LNA by using S-parameters data
files in EDA tools provides almost all linear measurements.
Hence a number of time consuming iterations of different biasing
circuits with optimization methods may be required to reach
targeted specifications with the fixed operating point at the
desired points in the load line. Considering this behavior, various
alternate biasing circuit schemes are prepared and founded the
results associated with it. Furthermore, this paper unmistakably
clarifies the impacts of the biasing circuit by utilizing
intermodulation and harmonics distortion technique for
portrayal characterization. Different cases and sorts of the
biasing circuits with various biasing focuses have been tested and given clear perspective of the biasing ideas.
1. Design Of High Power Amplifier At 3.4 GHz For Satellite
Transponder (IRNSS)
Patel Neel K.
Department of Master Engineering In Communication System Engineering,
L. J. Institute of Engineering and Technology,
Gujarat Technological University,
Ahmedabad, Gujarat
patel.neel2810@gmail.com
Abstract
This paper gives a step-by-step of the design,
simulation and measurement of a Power
Amplifier(PA) operating frequency from 2.5GHz to
4.5GHz. The design of Class A Power amplifier was
performed in Agilent ADS and the performance was
tested with SZA3044Z BJT.
Key Words: RF Power Amplifier, Bipolar Junction
Transistor(BJT), IRNSS, High Gain
I. INTRODUCTION
In a communication satellite serving the earth, the
transponder transforms the received signals into forms
appropriate for the transmission from space to earth. The
transponder may be simply a repeater that amplifies and
frequency signals. In this paper, the technologies of the
major transponder elements are presented and amplifying
devices.
One of the key elements of any spacecraft
transponder is the output transmitter, consisting of a high
power amplifier (HPA) and the associated power supply.
The amplifier is operated at or near saturation (maximum
output power level) to attain a high overall efficiency of
converting dc energy from the power supply into useful
radio frequency (RF) energy that carries information.
The transmitter is required to amplify the
wanted signal without distortions and without other
impairments which would decrease the usefulness of the
signal. Two types of amplifiers (transmitters) are in
common use, electron beam devices (commonly
TWTAs) and solid state power amplifiers (SSPAs). For
the TWTAs, the electrical power supply is often required
to supply a number of high voltages (in the multikilovolt
range), which presents a series of technology and design
challenges. show in fig 1.
Fig 1 – Transponder power amplifier diagram
II. DESIGN APPROACH
The wireless communications in satellite transponder
increasing demands on systems designs. A critical
element in Radio Frequency (RF) front ends is the Power
Amplifier (PA). Main specifications for PA design
include high linearity, better gain and efficiency. This
paper describes the process of designing a single stage
classA Power Amplifier for operation in the 2.5-4.5 GHz
band.
The active device specified for this design was
a Rfmd SZA3044Z BJT. Table I shows the performance
specifications for the designed Power amplifier.
TABLE I
TARGET SPECIFICATION
Parameter Symbol Specification
Frequency range fo 2.5-4.5 GHz
Gain S21 ≥15dB
Input return loss S11 ≤ -10dB
Output return loss S22 ≤ -10dB
Input/output
Impedance
Z0 50Ω
Output power P0 1W
2. III. STABILITY CONSIDERATION
Before PA design, it is important to determine the
stability of the transistor. The stability of an amplifier
is very important in the design and if not taken care,
can create self-oscillation of the device due to
reflected wave.
Amplifier is not reliable when it is unstable
condition. The stability of a circuit is characterized by
stability factor. The transistor is stable when K>1 and
∆<1.
Fig 2- Stability simulation
After simulation ,the value of stability factor (K) is
6.673(K>1). So, now the transistor is in stable region.
STABILITY FACTOR, K (SHOULD BE >1)
Fig 3- Stability result
IV. MATCHING NETWORK DESIGN
Impedance matching is required to maximize the
power transfer and minimize the reflections. Smith
chart is used for impedance matching. According to
maximum power transfer theorem, maximum power
delivered to the load when the impedance of load is
equal to the complex conjugate of the impedance of
source (ZS=ZL*).
A.INPUT MATCHING NETWORK
The first set of measurements we are taken
for S11 with the device mounted on the board and
biased, but without matching networks. These
measurements were de-embedded in ADS to obtain
the input impedance at the device terminal.
Fig 4- Input matching network
The circuit was then conjugate matched
from this point to the 50Ω impedance presented by
the trace line. The input matching network shown in
Figure 3, was designed using the Smgamma function
in ADS.
The input matching network uses a series
inductor and parallel capacitor. A parallel capacitor is
the value of 0.5pF and series inductor is the value of
1.4nH. A lumped component matching at 3.4GHz is a
viable option but it would not provide the option of
tuning.
Fig 5- Input impedance result
B. OUTPUT MATCHING NETWORK
To design the output matching network, S22 of the
biased, unmatched system was measured and de-
embedded back to the device terminals. Simulations
were then performed to determine the impedance
presented to the drain that would maximize small
signal gain. The matching network was designed in
the same fashion as the input matching network.
This method gave several different optimal
load impedances, indicating that trade-offs would be
necessary to meet all specifications. The output
matching network shown in Figure 5, was designed
using the Smgamma function in ADS.
3. Fig 6- Output matching network
The output matching network uses a series
inductor and parallel capacitor. A parallel capacitor is
the value of 2.85 pF and series inductor is the value
of 0.5nH. A lumped component matching at 3.4GHz
is a viable option but it would not provide the option
of tuning.
Fig 7 – Schematic of the Power Amplifier with
Input and Output Matching Networks
Fig 8- Output impedance result
INPUT RETURN LOSS AND OUTPUT
RETURN LOSS
Fig 9-S11
Fig 10- S22
4. Fig 11- S21 Gain
V. MEASURED RESULTS
The complete schematic of the power
amplifier is shown in the Figure 6. The performance
results are shown in the Figs.9,10,11. The S11 is
shown in Figure 9. The region between 2.5 to 4.5GHz
has S11 in the order of -39.873dB, S22 in the order of
-49.342dB from measurements and the S21 gain
value is 26.412dB shown in Figure 11.
TABLE II
MEASURED RESULTS
VI. CONCLUSION
The power amplifier presented here doesn’t meet
many of the required specifications. Still a Stable
Power amplifier with certain loss of power has been
designed with proper matching networks. But
working on this design provided a lot on insight into
design of power amplifiers and the problems faced
when the specifications require designs to be
extremely competitive in terms of performance.
The choice of transistor in this power
amplifier has influenced the design specifications in
an unexpected manner. To make a power amplifier
utilizing this device, a wide variety of matching
networks should be explored along with an
appropriate device modelling in ADS.
VII. ACKNOWLEDGEMENT
The Author thanks Prof.A.K Sisodia & Ast Prof.
Nimesh M. Prabhakar from L.J.Institute of
Engineering and Technology for technical discussion
& processing support without whom this paper would
never be complected.
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Parameter Symbol Specification Measured
results
Gain S21 ≥15dB 26.412dB
Input return
loss
S11 ≤ -10dB -39.873dB
Output return
loss
S22 ≤ -10dB -49.342dB
Input/output
Impedance
Z0 50Ω 50Ω
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