This document provides a SPICE model for the 1SS412 general purpose rectifier diode manufactured by Toshiba. It includes: 1) The SPICE subcircuit model with parameters for the 1SS412 diode model. 2) Tables comparing the simulated and measured forward current, capacitance, and reverse recovery characteristics of the diode to validate the model. 3) Diagrams of the test circuits used to measure the diode characteristics. The SPICE model accurately simulates the 1SS412 diode's electrical behavior and can be used in circuit design simulations.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 1SS412
MANUFACTURER: TOSHIBA
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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SPICE MODEL
Circuit Configuration
*$
* PART NUMBER: 1SS412
* MANUFACTURER: TOSHIBA
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
.SUBCKT 1SS412 1 2 3
D1 1 3 D1SS412
D2 3 2 D1SS412
.MODEL D1SS412 D
+ IS=18.216E-15
+ N=1.2640
+ RS=.41027
+ IKF=2.6752
+ CJO=2.9583E-12
+ M=.36962
+ VJ=.62677
+ BV=80
+ IBV=100.00E-12
+ TT=260.12E-9
+ ISR=0
.ENDS
*$
(3)
(1)
(2)

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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DIODE MODEL PARAMETERS
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V_V1
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(R1)
10uA
100uA
1.0mA
10mA
100mA
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
U1
1SS412
V1
0Vdc
0
R1
0.01m
R2
100MEG

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd (A)
Vfwd (V)
%Error
Measurement Simulation
0.00001 0.655 0.658 0.40
0.00002 0.682 0.680 -0.22
0.00005 0.710 0.710 0.00
0.0001 0.735 0.733 -0.29
0.0002 0.757 0.756 -0.19
0.0005 0.785 0.786 0.08
0.001 0.812 0.809 -0.41
0.002 0.831 0.832 0.09
0.005 0.861 0.863 0.22
0.01 0.889 0.888 -0.15
0.02 0.912 0.914 0.27
0.05 0.957 0.957 0.00
0.1 1.003 1.001 -0.24
0.2 1.064 1.065 0.08

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V(N11503)
100mV 1.0V 10V 50V
I(V2)/(80V/1u)
0
1.0p
2.0p
3.0p
3.5p
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
100MEG
U1
1SS412
V2
0Vdc
V1
TD = 0
TF = 50ns
PW = 5us
PER = 10us
V1 = 0
TR = 1u
V2 = 80
0

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev (V)
Ct (pF)
%Error
Measurement Simulation
0.1 2.797 2.802 0.16
0.2 2.664 2.670 0.23
0.5 2.387 2.381 -0.26
1 2.094 2.080 -0.69
2 1.767 1.744 -1.32
5 1.280 1.314 2.66
10 1.008 1.039 3.08
20 0.802 0.814 1.50
50 0.603 0.583 -3.32

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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0
V1TD = 100ns
TF = 9ns
PW = 20us
PER = 50us
V1 = -9V
TR = 10ns
V2 = 11.1V
R1
50
R2
100MEG
U1
1SS412
Time
19.4us 19.8us 20.2us 20.6us 21.0us 21.4us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 92.00 91.379 -0.67

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Reverse Recovery Characteristic Reference
Measurement
Trj =92(ns)
Trb= 220(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Relation between trj and trb
Example