This document contains a device modeling report for a TOSHIBA RN1418 transistor. It includes the SPICE model parameters for the transistor and simulation results showing: 1) The transistor's input voltage vs. output current characteristics (ON characteristics) with good agreement to the datasheet specifications. 2) The transistor's output current vs. input voltage characteristics (OFF characteristics) also matching well with datasheet values. 3) The transistor's DC current gain vs. output current follows expectations based on the datasheet. 4) The output voltage vs. output current simulation aligns closely with the transistor's datasheet saturation voltage specifications.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: BRT
PART NUMBER: RN1418
MANUFACTURER: TOSHIBA

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
SPICE MODEL
*$
*PART NUMBER: RN1418
*Vcc=50V, Io=100mA
*All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
.SUBCKT RN1418 GND IN OUT
R_R1 IN B 44.5k
R_R2 B GND 10k
Q_Q2 OUT B GND QN1
.MODEL QN1 NPN
+ IS=6.5000E-15
+ BF=1.5000E3
+ VAF=100
+ IKF=.49967
+ ISE=47.585E-15
+ NE=1.3566
+ BR=5.6923
+ VAR=100
+ IKR=.11792
+ ISC=2.3068E-9
+ NC=2.5179
+ NK=2.0865
+ RC=1.5867
+ CJE=2.0000E-12
+ CJC=2.0000E-12
+ TF=612.43E-12
+ XTF=10
+ VTF=10
+ ITF=1
+ TR=10.000E-9
.ENDS
*$

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
PSpice
model
parameter
Model description
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS

4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Input voltage vs. output current (ON characteristics)
Circuit simulation result
Evaluation circuit
V_V2
1.0V 10V 30V
- I(V1)
1.0mA
10mA
300uA
30mA

5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph
Circuit Simulation Result
Simulation Result
Condition @ Vce = 0.2 V
Ic(mA)
VI(ON) (V)
Error (%)
Datasheet Simulation
0.3 3.7 3.7148 0.40000
0.5 3.8 3.8861 2.26579
1 4.0 4.1859 4.64750
2 4.4 4.6171 4.93409
5 5.4 5.6202 4.07778
10 7.35 7.0223 -4.45850

6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Output current vs. input voltage (OFF characteristics)
Circuit simulation result
Evaluation circuit
V_V2
1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
- I(V1)
100uA
1.0mA
30uA
5.0mA

7. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph
Circuit Simulation Result
Simulation Result
Condition @ Vce = 5 V
Ic(uA)
VI(OFF) (V)
Error (%)
Datasheet Simulation
30 3.2 3.1596 -1.26250
50 3.4 3.2449 -4.56176
100 3.45 3.3723 -2.25217
200 3.55 3.5170 -0.92958
500 3.7 3.7619 1.67297
1000 3.95 4.0252 1.90380
2000 4.4 4.4007 0.01591

8. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
I(V1)
1.0mA 10mA 30mA
I(V1)/ I_I1
10
100
300
DC current gain vs. output current
Circuit simulation result
Evaluation circuit

9. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph
Circuit Simulation Result
Simulation Result
Condition @ Vce = 5 V
Ic(mA)
hFE
Error (%)
Datasheet Simulation
1 13 13.184 1.41538
2 24 23.976 -0.10000
5 50 49.104 -1.79200
10 78 78.503 0.64487
20 110 113.359 3.05364
30 130 129.334 -0.51231

10. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Output voltage VS. output current
Circuit simulation result
Evaluation circuit
I_I2
10mA5.0mA 30mA
V(F1:2)
10mV
100mV
450mV

11. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph
Circuit Simulation Result
Simulation Result
Condition @ IC/IB = 20
Ic(mA)
VCE (sat) (mV)
Error (%)
Datasheet Simulation
5 0.07 0.071239 1.77000
10 0.068 0.069739 2.55735
20 0.07 0.072181 3.11571
50 0.089 0.08989 1.00000
60 0.110 0.113829 3.48091