This document provides a SPICE model for the L709CE PIN diode manufactured by Litec Corporation. It includes: 1) The SPICE model parameters for the L709CE diode and descriptions of each parameter. 2) Circuit schematics and simulation results showing the forward and reverse characteristics and junction capacitance of the diode which are compared to manufacturer measurement data. 3) Copyright information for Bee Technologies, the creator of the SPICE model.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: PIN Diode
PART NUMBER: L709CE
MANUFACTURER: Litec Corporation

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
SPICE MODEL
*$
* PART NUMBER: L709CE
* MANUFACTURER: Litec Corporation
* VRM=180V,IF=100mA,IFSM=2A
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
.SUBCKT L709CE A K
V_V_I A N00040 0Vdc
V_V_Ifwd IN2 K 0Vdc
E_E1 VREV 0 VALUE { IF(V(A,K)>0, 0,V(A,K)) }
E_E3 I_REV0 0 VALUE { limit(1.3602e-08+8.2763e-09*
+ LOG10(-V(Vrev)),0.1e-9,1G) }
E_E4 I_REV 0 VALUE { V(I_rev0)*V(Vr_small)-(-I(V_V_Irev)) }
E_E6 IN K VALUE { IF(V(A,K)>0, V(A,K),0) }
V_V_Irev VREV1 VREV 0Vdc
G_ABMI1 N00040 K VALUE { I(V_V_Ifwd)-V(I_rev) }
E_E2 VR_SMALL 0 TABLE { V(Vrev) }
+ ( (-0.1,1) (0,0) )
D_D3 IN IN2 DL709CE
R_R1 0 VR_SMALL 10MEG
D_D4 VREV1 0 DL709CE
R_R2 0 I_REV0 10MEG
R_R3 0 I_REV 10MEG
.MODEL DL709CE D
+ IS=1.0000E-15 N=.79155 RS=.64725 IKF=7.6605E-6
+ CJO=691.75E-15 M=.3596 VJ=9.9900
+ BV=250 IBV=35e-9
+ ISR=0 EG=1.141 TT=0
.ENDS
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
V_V1
0V 1.0V 1.5V
I(R1)
100uA
1.0mA
10mA
100mA
R1
0.01m
0
U1
L709CE
V1
0Vdc
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph
Circuit Simulation Result
Simulation Result
IF(mA)
VF(V)
Error(%)
Measurement Simulation
0.100 0.570 0.571 0.175
0.200 0.600 0.600 0.000
0.500 0.640 0.639 -0.156
1.000 0.665 0.666 0.150
2.000 0.695 0.695 0.000
5.000 0.735 0.735 0.000
10.000 0.765 0.766 0.131
20.000 0.800 0.800 0.000
50.000 0.860 0.860 0.000
100.000 0.918 0.919 0.109

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
V(N12656)
100mV 1.0V 10V 50V
I(V2)/(180V/1us)
10f
100f
1.0p
10p
100p
0
V1
TD = 0
TF = 10ns
PW = 50us
PER = 10us
V1 = 0
TR = 1us
V2 = 180
V2
0Vdc
U1
L709CE
Junction Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph
Circuit Simulation Result
Simulation Result
VR+0.65(V)
Ct(pF)
Error(%)
Measurement Simulation
1.150 0.680 0.668 -1.765
1.650 0.660 0.655 -0.758
2.650 0.630 0.632 0.317
5.650 0.570 0.567 -0.526
10.650 0.520 0.533 2.500
20.650 0.480 0.462 -3.750

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
V_V1
1.0V 10V 100V 1.0KV
-I(V1)
1.0nA
10nA
100nA
1.0uA
U1
L709CE
V1
0Vdc
0
R1
0.01m
Reverse Characteristic
Circuit Simulation Result
Evaluation Circuit

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph
Circuit Simulation Result
Simulation Result
IR(nA)
VR(V)
Error(%)
Measurement Simulation
13.600 1.000 1.000 0.000
20.000 6.200 6.000 -3.226
30.000 80.500 80.000 -0.621
32.840 200.000 200.000 0.000