This document provides a SPICE model for the SCS110AG silicon carbide Schottky diode manufactured by ROHM. It includes: - Parameters for the diode model such as saturation current, emission coefficient, and breakdown voltage. - Simulation results that show good agreement with measurements for forward voltage, junction capacitance, and reverse recovery characteristics. - Reverse characteristic simulation results that match measurements with less than 3% error.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: SCS110AG
MANUFACTURER: ROHM
REMARK: Professional Model
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
SPICE MODEL
*$
* PART NUMBER: SCS110AG
* MANUFACTURER: ROHM
* VRM=600V, IO=10A
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
.SUBCKT SCS110AG A K
V_V_I A N00040 0Vdc
V_V_Ifwd IN2 K 0Vdc
E_E1 VREV 0 VALUE { IF(V(A,K)>0, 0,V(A,K)) }
E_E3 I_REV0 0 VALUE { 0.4757e-11*exp(0.020371*(-V(Vrev)))+2.05e-9 }
E_E4 I_REV 0 VALUE { V(I_rev0)*V(Vr_small)-(-I(V_V_Irev)) }
E_E6 IN K VALUE { IF(V(A,K)>0, V(A,K),0) }
V_V_Irev VREV1 VREV 0Vdc
G_ABMI1 N00040 K VALUE { I(V_V_Ifwd)-V(I_rev) }
E_E2 VR_SMALL 0 TABLE { V(Vrev) }
+ ( (-0.1,1.0) (0,0) )
R_R1 0 VR_SMALL 10MEG
R_R2 0 I_REV0 10MEG
R_R3 0 I_REV 10MEG
D_D4 IN IN2 DSCS110AG
D_D5 VREV1 0 DSCS110AG
.MODEL DSCS110AG D
+ IS=1.3286E-18 RS=33.943E-3 IKF=2.0124 EG=3
+ CJO=553.61E-12 M=.48432 VJ=1.0481
+ ISR=0 N=1 BV=615 IBV=2.0000E-6 TT=7.65E-9
.ENDS
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
pice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
0.001
0.010
0.100
1.000
10.000
100.000
0.0 0.5 1.0 1.5 2.0 2.5
FORWARDCURRENT:IF(A)
FORWARD VOLTAGE: VF(V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IF(A)
VF(V)
Error (%)
Measurement Simulation
0.001 0.8800 0.8861 0.69
0.01 0.9400 0.9459 0.63
0.1 1.0100 1.0091 -0.09
0.2 1.0350 1.0311 -0.38
0.5 1.0700 1.0669 -0.29
1 1.1070 1.1050 -0.18
2 1.1700 1.1628 -0.62
5 1.3000 1.3030 0.23
10 1.5000 1.5062 0.41
15 1.7000 1.6964 -0.21

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Junction Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
1
10
100
1000
0.1 1 10 100
CAPACITANCEBETWEENTERMINAL:Ct(pF)
REVERSE VOLTAGE:VR(V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
VR(V)
C (pF)
Error (%)
Measurement Simulation
0.1 530.012 533.839 0.72
0.2 507.843 517.441 1.89
0.5 458.372 463.662 1.15
1 400.824 403.313 0.62
2 331.687 331.478 -0.06
5 234.876 237.073 0.94
10 176.213 177.055 0.48
20 129.285 129.551 0.21
50 84.692 84.318 -0.44
100 62.109 60.590 -2.45

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 7.500 7.509 0.11
Time (s)

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Reverse Recovery Characteristic Reference
Trj =7.5(ns)
Trb=16.0(ns)
Conditions: Ifwd=0.2A, Irev=0.2A, Rl=50Ω
Relation between trj and trb
Example
Measurement

10. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Reverse Characteristic
Circuit Simulation Result
Evaluation Circuit

11. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
1
10
100
1000
10000
100000
0 100 200 300 400 500 600
REVERSECURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
VR(V)
IR(nA)
Error (%)
Measurement Simulation
20 2.1000 2.0971 -0.14
100 2.3000 2.2862 -0.60
200 2.6588 2.7288 2.63
300 4.9111 4.7947 -2.37
400 19.3590 19.2980 -0.32
500 127.2358 129.1860 1.53
600 998.0000 970.5040 -2.76