This document contains a SPICE model for the DTA123EE transistor from manufacturer ROHM. It includes the model parameters for the PNP bipolar junction transistor as well as simulation results comparing the transistor's ON characteristics, OFF characteristics, and DC current gain to the datasheet specifications with errors less than 5%. Circuit simulations were performed to evaluate the transistor's performance under various operating conditions.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Digital transistors (built-in resistors)
PART NUMBER: DTA123EE
MANUFACTURER: ROHM

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
*$
*PART NUMBER: DTA123EE
*Vcc=-50V, Io=-100mA
*All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
.SUBCKT DTA123EE GND IN OUT
R_R1 IN B 2.4k
R_R2 B GND 2.55k
Q_Q2 OUT B GND QP1
.MODEL QP1 PNP
+ IS=3.000E-15
+ BF=330.72
+ VAF=150
+ IKF=.79433
+ ISE=72.011E-15
+ NE=1.425
+ BR=2.9704
+ VAR=100
+ IKR=2.2984
+ ISC=202.208E-15
+ NC=1.2696
+ NK=1.3014
+ RC=1.5254
+ CJE=2.0000E-12
+ CJC=2.0000E-12
+ TF=6.3408E-9
+ XTF=10
+ VTF=10
+ ITF=1
+ TR=10.000E-9
.ENDS
*$
SPICE MODEL

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
PSpice
model
parameter
Model description
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS

4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- I(V2)
-100uA -100mA
V(I1:+)
-100mV
-100V
I1
0mAdc
V2
-0.3Vdc
0
U2
DTA123EE
Input voltage vs. output current (ON characteristics)
Circuit simulation result
Evaluation circuit

5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph
Circuit Simulation Result
Simulation Result
Condition @ Vo = -0.3 V
Io(A)
VI(ON) (V)
Error (%)
Datasheet Simulation
-100u 1.2 1.224 2.000
-200u 1.25 1.26 0.800
-500u 1.3 1.314 1.076
-1m 1.35 1.361 0.814
-2m 1.4 1.417 1.214
-5m 1.5 1.518 1.200
-10m 1.7 1.636 -3.764
-20m 1.9 1.828 -3.789

6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
V_V2
0V -0.5V -1.0V -1.5V -2.0V -2.5V -3.0V
- I(V1)
-1.0uA
-10mA
V2
0Vdc
V1
-5Vdc
U3
DTA123EE
0
Output current vs. input voltage (OFF characteristics)
Circuit simulation result
Evaluation circuit

7. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph
Circuit Simulation Result
Simulation Result
Condition @ VCC = -5 V
Io(A)
VI(Off) (V)
Error (%)
Datasheet Simulation
-1u 1 0.984 -1.600
-2u 1.03 1.02 -0.970
-5u 1.08 1.066 -1.296
-10u 1.11 1.1 -0.900
-20u 1.14 1.135 -0.438
-50u 1.19 1.184 -0.504
-100u 1.22 1.22 0
-200u 1.27 1.258 -0.944
-500u 1.31 1.313 0.229
-1m 1.36 1.359 -0.073
-2m 1.41 1.417 0.496
-5m 1.52 1.513 -0.460
-10m 1.62 1.628 0.493

8. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
-I(V1)
-100uA -100mA
I(V1)/ I_I1
1.0
10
100
1.0K
0
V1-5Vdc
U3
DTA123EE
V2
0Vdc
I1
0Adc
DC current gain vs. output current
Circuit simulation result
Evaluation circuit

9. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph
Circuit Simulation Result
Simulation Result
Condition @ VCC =- 5V
Io(A)
GAIN
Error (%)
Datasheet Simulation
-200u 1.05 1 -4.761
-500u 1.98 1.9 -4.04
-1m 3.8 3.65 -3.947
-2m 7.15 6.8 -4.895
-5m 16 15.314 -4.287
-10m 28.5 27.185 -4.614
-20m 48.5 46.815 -3.474
-50m 80 78.021 -2.473
-100m 89 92.818 4.289

10. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
-I_I2
-100uA -100mA
V(F1:2)
-1.0mV
-1.0V
Output voltage VS. output current
Circuit simulation result
Evaluation circuit
I2
10mAdc
U3
DTA123EE
0
F1
F
GAIN = 0.05

11. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph
Circuit Simulation Result
Simulation Result
Condition @ Io/II = 20
Io(A)
V0(on) (mV)
Error (%)
Datasheet Simulation
-10m 0.12 0.12 0
-20m 0.11 0.113 2.727
-50m 0.16 0.154 -3.75
-100m 0.25 0.242 -3.2