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© 2015 IJEDR | Volume 3, Issue 2 | ISSN: 2321-993
IJEDR1502199 International Journal of Engineering Development and Research (www.ijedr.org) 1202
Design, Simulation and Development of Bandpass
Filter at 2.5 GHz
Dipak C.Vaghela, A. K. Sisodia, N. M. Prabhakar
Communication Engineering,
LJIET, Ahmedabad
________________________________________________________________________________________________________
Abstract - This paper is to design bandpass filter suitable with center at 2.5 GHz. This application is in the S band range at
2.5 GHz center frequency currently being used for Indian Regional Navigation Satellite System (IRNSS) receiver. The filter
covers the centre frequency 2.5 GHz and the bandwidth is 80 MHz. This project was initiated with theoretical understanding
of various types of filter and their applications. And suitable type was selected. It functions to pass through the desired
frequencies within the range and block unwanted frequencies. In addition, filters are also needed to remove out harmonics
that are present in the communication system. It was design and simulated using ADS (Advanced Design System) software
Keywords- Bandpass Filter, Chebyshev, Fractional Bandwidth, Advanced Design System (ADS)
________________________________________________________________________________________________________
I. INRODUCTION
Filter design depended on application requirnment. Application play very important role for filter design like which type
of bandwidth require, ripple in passband, attenuation in stopband and center frequency. In this paper Filter is design for IRNSS
application at 2.5GHz center frequency with 80MHz bandwidth with 0.1dB ripple level. Chebychev filter design type is used
because it provide shaper cutoff in passbad.
II. CALCULATE FRACTION BANDWIDTH, NORMALIZED FREQUENCY AND NUMBER OF ORDER OF FILTER
The centre operating frequency for the filter is 2.5 GHz with a bandwidth of 3.2%.The maximum ripple allowed in the
pass band is 0.1 dB, and -20dB attenuation at 2.6GHz.According to the filter design specifications, Chebyshev response with a
passband ripple of 0.1 dB can satisfy these requirements
Here, We have, 𝑓1 = 2.46 GHz, 𝑓2 = 2.54 GHz, so
△ =
𝜔2 − 𝜔1
𝜔0 (1)
△= 0.032
Normalized frequency given by following method
𝜔
𝜔𝑐
=
1
△
(
𝜔
𝜔𝑐
−
𝜔𝑐
𝜔
)
(2)
𝜔
𝜔𝑐
= 2.451923
Next step for designing any Chebychev filter is to determine the order of the filter. The filter order is number of inductive
and capacitive elements that should be included in the filter design. This can be done by following formulation
𝑛 =
cosh−1 √10
𝐿 𝑇
10
−1
𝐾 − 1
cosh−1 (
𝜔
𝜔0
)
(3)
𝑛 ≅ 3
Where LT is the minimum attenuation at frequency WT, and K=10
𝐿 𝑎𝑟
10 with Lar being the maximum ripple in 0.1 dB
allowed in the pass band which is 0.1 dB [3]
, Normalized frequency given by equation (2). The order of the filter is a measure of the
minimum number of elements to be included in the filter to realize the required amount of ripple in the pass band and attenuation
at a frequency outside of the pass band.
© 2015 IJEDR | Volume 3, Issue 2 | ISSN: 2321-993
IJEDR1502199 International Journal of Engineering Development and Research (www.ijedr.org) 1203
III. CALCULATE LOW-PASS FILTER PROTOTYPES AND LUMPED ELEMENTS VALUES OF THE BANDPASS
FILTER
The following equations are used to calculate the Element values for equal-ripple low-pass filter prototypes (0.1 dB
ripple)
𝑎 𝑘 = sin (
(2𝑘 − 1)𝜋
2 ∗ 𝑛
) (4)
𝑏 𝑘 = 𝛾2
+ 𝑠𝑖𝑛2
(
𝑘𝜋
𝑛
) (5)
𝛽 = ln [coth (
𝐿 𝑎𝑟
17.37
)]
(6)
𝛾 = sinh (
𝛽
2 ∗ 𝑛
) (7)
𝑔0 = 1
(8)
𝑔1 =
2 ∗ 𝑎1
𝛾 (9)
𝑔 𝑘 =
4 ∗ 𝑎 𝑘−1 ∗ 𝑎 𝑘
𝑏 𝑘−1 ∗ 𝑔 𝑘−1
(10)
gn+1 = 1
(11)
In above equetions k = 1,2,3,4……
Now we can get following table for 0.1 dB ripple level with the help of equation (4) to (11) for various
TABLE I. ELEMENT VALUES FOR EQUAL-RIPPLE LOW-PASS FILTER PROTOTYPES FOR 0.1DB RIPPLE
n 𝑔1 𝑔2 𝑔3 𝑔4 𝑔5 𝑔6
1 0.3052 1.0
2 0.8431 0.6220 1.3554
3 1.0315 1.1474 1.0315 1.0
4 1.1088 1.3062 1.7704 0.8181 1.3554
5 1.1468 1.3712 1.9750 1.3712 1.1468 1.0
From above Table I, for n = 3 order, the element values obtained are
𝑔1 = 1.0315 = 𝐿1
′
𝑔2 = 1.1474 = 𝐶2
′
𝑔3 = 1.0315 = 𝐿3
′
Lumped Values of the Bandpass Filter calculate as following method. Now we can calculate L and C component value as
following parameter. The Lumped values of the Band pass filter after frequency and impedance scaling are given by
For Series L&C
LK =
Z0 ∗ LK
′
ω0 ∗△
(12)
𝐶 𝐾 =
△
𝑍0 ∗ 𝐿 𝐾
′
∗ 𝜔0
(13)
For Shunt L&C
© 2015 IJEDR | Volume 3, Issue 2 | ISSN: 2321-993
IJEDR1502199 International Journal of Engineering Development and Research (www.ijedr.org) 1204
𝐿 𝐾 =
△∗ 𝑍0
𝜔0 ∗ 𝐶 𝐾
′
(14)
𝐶 𝐾 =
𝐶 𝐾
′
𝑍0 ∗ 𝜔0 ∗△
(15)
Where𝑍0 = 50 Ω, Δ = 0.032 and 𝑓0 = 2.5 GHz
IV.ADS SIMULATION OF LC COMPONENTS AND RESULT
Now put all values if Series and Shunt elements value in Following Bandpass filter design in ADS (Advanced Design
System)
Figure 1. ADS diagram of lumped elements
Figure 2. S-parameter simulation schematic of filter
Practically, it is not possible to design this bandpass filter at high frequency in such LC components, for that we can used
Microstrip line as a transmission line
V. PARALLEL COUPLED MICROSTRIP FILTER
A general structure of parallel-coupled microstrip band-pass filters shown in Figure 6 that use half-wavelength line
resonators. The coupling gaps correspond to the admittance inverters in the low-pass prototype circuit Even and Odd mode
characteristic impedances of parallel-coupled half-wave resonators are computed using admittance inverters. These even and odd
mode impedances are then used to compute physical dimension of the filter. In this way, the required parallel coupled microstrip
filter parameters can be easily derived for Chebyshev prototypes.
© 2015 IJEDR | Volume 3, Issue 2 | ISSN: 2321-993
IJEDR1502199 International Journal of Engineering Development and Research (www.ijedr.org) 1205
Figure 3. Common structure of microstrip parallel coupled line bandpass filter
The strips are arranged parallel close to each other, so that they are coupled with certain coupling factors. We use the
following equations for designing the parallel-coupled filter
𝐽01
𝑌0
= √
𝜋 ∗ 𝐹𝐵𝑊
2 ∗ 𝑔0 ∗ 𝑔1
(16)
For j=1 to n-1:
𝐽𝑗,𝑗+1
𝑌0
=
𝜋 ∗ 𝐹𝐵𝑊
2
1
√ 𝑔𝑗 ∗ 𝑔𝑗+1
(17)
𝐽 𝑛,𝑛+1
𝑌0
= √
𝜋 ∗ 𝐹𝐵𝑊
2 ∗ 𝑔 𝑛 ∗ 𝑔 𝑛+1
(18)
Where 𝑔0, 𝑔1 … 𝑔 𝑛 are the element of a ladder-type low-pass prototype with a normalized cut-off Ω 𝑐 = 1, and FBW is the
fractional bandwidth of band-pass filter. 𝐽𝐽,𝐽+1 are the characteristic admittances of J-inverters and 𝑌0 is the characteristic admittance
of the terminating lines. The equation above will be used in end-coupled line filter because the both types of filter can have the
same low-pass network representation. However, the implementation will be different. To realize the J-inverters obtained above,
the even- and odd-mode characteristic impedances of the coupled microstrip line resonators are determined by
For j=0 to n
(𝑍0𝑒) 𝑗,𝑗+1 =
1
𝑌0
[1 +
𝐽𝑗,𝑗+1
𝑌0
+ (
𝐽𝐽,𝐽+1
𝑌0
)2
] (19)
(𝑍0𝑜) 𝑗,𝑗+1 =
1
𝑌0
[1 −
𝐽𝑗,𝑗+1
𝑌0
+ (
𝐽𝐽,𝐽+1
𝑌0
)2
] (20)
TABLE II. CALCULATED VALUES OF EVEN AND ODD RESISTANCES
Stage(i,i+1) 𝑍0𝑒Ω 𝑍0𝑜Ω
1,4 63.4729 41.3994
2,3 52.4178 47.7975
The next step of the filter design is to find the dimensions of coupled microstrip lines that exhibit the desired even mode
and odd-mode impedances. Firstly, we determine the equivalent single microstrip shape ratios
𝑊
𝐻
essentially responsible to relate
the coupled line ratios to single line ratios.
For a single microstrip line,
© 2015 IJEDR | Volume 3, Issue 2 | ISSN: 2321-993
IJEDR1502199 International Journal of Engineering Development and Research (www.ijedr.org) 1206
𝑍0𝑠𝑜 =
(𝑍0𝑜) 𝑗,𝑗+1
2 (21)
𝑍0𝑠𝑒 =
(𝑍0𝑒) 𝑗,𝑗+1
2 (22)
For a single microstrip line, The approximate expressions for W/h (Figure 1) in terms of 𝑍 𝑐 and 𝜀 𝑟, derived by Wheeler
and Hammerstad, are available
For
𝑊
𝐻
≤ 2
𝑊
𝐻
=
8 ∗ exp(𝐴)
exp(2 ∗ 𝐴) − 2 (23)
Where
𝐴 =
𝑍 𝐶
60
√
𝜀 𝑟 + 1
2
+
𝜀 𝑟 − 1
𝜀 𝑟 + 1
{0.23 +
0.11
𝜀 𝑟
} (24)
For
𝑊
𝐻
≥ 2
W
H
=
2
π
{(B − 1) − ln(2 ∗ B − 1) +
εr − 1
2 ∗ εr
[ln(B − 1) + 0.39 −
0.61
εr
]} (25)
Where
𝐵 =
60𝜋2
𝑍 𝐶√ 𝜀 𝑟
(26)
S
H
=
2
π
cosh−1
[
cosh ((
π
2
) (
W
H
)
se
) + cosh ((
π
2
) (
W
H
)
so
) − 2
cosh ((
π
2
) (
W
H
)
so
) − cosh ((
π
2
) (
W
H
)
se
)
]
(27)
W
H
=
1
π
[cosh−1
1
2
((cosh (
π ∗ S
2 ∗ H
) − 1) + (cosh (
π ∗ S
2 ∗ H
) + 1) ∗ cosh ((
π
2
) ∗ (
W
H
)
se
))
− (
π ∗ S
2 ∗ H
)]
(28)
TABLE III. CALCULATED DIMENSIONS OF TRANSMISSION LINE SECTIONS
Line
Description
W(mm) L(mm) S(mm)
50 ohm-line 2.2910 16.4079 -
Coupled line
1 and 4
2.0253 16.5025 0.6110
Coupled line
2 and 3
2.2738 16.4422 3.1505
© 2015 IJEDR | Volume 3, Issue 2 | ISSN: 2321-993
IJEDR1502199 International Journal of Engineering Development and Research (www.ijedr.org) 1207
VI. DESIGN SPECIFICATION
The filter was modelled in ADS as shown in Figure 4. Using LineCalc tool in ADS, the dimension of the microstrip line viz.
length (L), width (W) and gap(S) To match with the 50 ohm circuit, MLIN (Microstrip Line) components are added to both sides
of the filter whose characteristic impedance is 50 ohm The Parameters of the substrate set in MSub controller are:
1) H: substrate thickness (1.2 mm)
2) Er: substrate relative dielectric constant (4.4)
3) Cond: metal conductivity (5.8e7)
4) Hu: upper ground substrate spacing (1.0E+33mm)
5) T: the thickness of metal layer (0.0127 mm)
6) TanD: dielectric loss tangent (0.01)
Figure 4. Model of the band pass filter in ADS
Figure 5 Layout of parallel-coupled microstrip bandpass filter
Simulation result in momentum shown in following figure
© 2015 IJEDR | Volume 3, Issue 2 | ISSN: 2321-993
IJEDR1502199 International Journal of Engineering Development and Research (www.ijedr.org) 1208
Figure 6. Momentum simulation results
VII. Fabrication Results Analysis
Fabrication is done by Etching technique with FR4 substrate material, and its model is following
Figure 7. Fabricate bandpass filter model
Figure 8. Hardware result of S(1,1)
© 2015 IJEDR | Volume 3, Issue 2 | ISSN: 2321-993
IJEDR1502199 International Journal of Engineering Development and Research (www.ijedr.org) 1209
Figure 9. Hardware result of S(2,1)
In Figure 9, while measurement of S(2,1) using VNA also consider both cables loss which is -14.606dB cable loss.so we
can compare schematic and practical results as following Table IV
TABLE IV. COMPARISON OF SCHEMATIC AND PRACTICAL RESULTS
Index
Return Loss
S(1,1)dB
Insertion loss
S(2,1)dB
Schematic Result -20.64 -4.780
Practical Result -20.63 -3.144
VIII. CONCLUSION
Designing a Parallel-Coupled Bandpass filter for IRNSS Application, has been presented. For the selected center frequency
of 2.5 GHz and on a substrate, we select FR4 with dielectric constant 4.4, because it is easily available in market, less cost and get
very good result. We get result as insertion loss around -4.87dB and return loss is -20.64dB in passband with 80 MHz bandwidth
in schematic, and insertion loss is around -3.144dB and return loss is -20.63dB in hardware and which is desirable.
REFERENCES
[1] Min Zhang; Yimin Zhao; Wei Zhang, "The simulation of microstrip Band Pass Filters based on ADS," Antennas, Propagation
& EM Theory (ISAPE), 2012 10th International Symposium, pp. 909-912, Oct. 2012, ISBN: 978-1-4673-1799-3
[2] Seghier, S.; Benahmed, N.; Bendimerad, F.T.; Benabdallah, N.,"Design of parallel coupled microstrip bandpass filter for FM
Wireless applications," Sciences of Electronics, Technologies of Information and Telecommunications (SETIT), 2012 6th
International Conference, pp.207-211, March.2012, ISBN: 978-1-4673-1657-6
[3] Ma, Jun; Sun, Zhengwen; Chen, Yong, "Design and simulation of L-band wideband microstrip filter," Information Science and
Technology (ICIST), 2013 International Conference, pp. 183-186, March 2013, ISBN: 978-1-4673-5137-9
[4] Bey-Ling Su; Ray Yueh-Ming Huang, "5.8 GHz bandpass filter design using planar couple microstrip lines," Communications,
Circuits and Systems, 2004.ICCCAS 2004. 2004 International Conference on, vol.2, pp. 1204-1207, June 2004, ISBN: 0-7803-
8647-7
[5] Naghar, A.; Aghzout, O.; Vazquez Alejos, A.; Garcia Sanchez, M.; Essaaidi, M., "Development of a calculator for Edge and
Parallel Coupled Microstrip band pass filters," Antennas and Propagation Society International Symposium (APSURSI), 2014
IEEE , pp. 2018-2019, July 2014, ISBN: 978-1-4799-3538-3
[6] Lolis, L.; Pelissier, M.; Bernier, C.; Dallet, D.; Begueret, J-B, "System design of bandpass sampling RF receivers," Electronics,
Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference, pp. 691-694, Dec.2009, ISBN: 978-1-4244-5090-
9
[7] E. O. Hammerstard, “Equations for microstrip circuit design,” in Proceedings of the European Microwave Conference, Hamburg,
Germany, pp. 268–272, 1975
[8] H. Wheeler, “Transmission line properties of parallel strips separated by a dielectric sheet”, IEEE Trans., MTT-13, pp. 172-185,
1965, ISSN: 0018-9480
[9] D. M. Pozar, Microwave Engineering, 3rd Ed. New York: Wiley, pp. 389-426, 2005
[10] Annapurna Das and Sisir K Das, “Microwave Engineering”, Mac Graw Hill, pp. 279-310, 2001
[11] J. S. Hong, M. J. Lancaster, “Microstrip Filter for RF/Microwave Applications”, A Wiley Interscience Publication, Canada, pp.
29-158, 2001.
[12] R. K. Mongia, I.J. Bahl, P. Bhartia, J. Hong “RF and Microwave Coupled Line Circuits Second Edition”, pp. 53-102, 2007
[13] ADS Circuit Design Cookbook 2.0, pp. 3-98, 2011

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Bandpass Filter in S-Band by D.C.Vaghela,LJIET,Ahmedabad,Gujarat.

  • 1. © 2015 IJEDR | Volume 3, Issue 2 | ISSN: 2321-993 IJEDR1502199 International Journal of Engineering Development and Research (www.ijedr.org) 1202 Design, Simulation and Development of Bandpass Filter at 2.5 GHz Dipak C.Vaghela, A. K. Sisodia, N. M. Prabhakar Communication Engineering, LJIET, Ahmedabad ________________________________________________________________________________________________________ Abstract - This paper is to design bandpass filter suitable with center at 2.5 GHz. This application is in the S band range at 2.5 GHz center frequency currently being used for Indian Regional Navigation Satellite System (IRNSS) receiver. The filter covers the centre frequency 2.5 GHz and the bandwidth is 80 MHz. This project was initiated with theoretical understanding of various types of filter and their applications. And suitable type was selected. It functions to pass through the desired frequencies within the range and block unwanted frequencies. In addition, filters are also needed to remove out harmonics that are present in the communication system. It was design and simulated using ADS (Advanced Design System) software Keywords- Bandpass Filter, Chebyshev, Fractional Bandwidth, Advanced Design System (ADS) ________________________________________________________________________________________________________ I. INRODUCTION Filter design depended on application requirnment. Application play very important role for filter design like which type of bandwidth require, ripple in passband, attenuation in stopband and center frequency. In this paper Filter is design for IRNSS application at 2.5GHz center frequency with 80MHz bandwidth with 0.1dB ripple level. Chebychev filter design type is used because it provide shaper cutoff in passbad. II. CALCULATE FRACTION BANDWIDTH, NORMALIZED FREQUENCY AND NUMBER OF ORDER OF FILTER The centre operating frequency for the filter is 2.5 GHz with a bandwidth of 3.2%.The maximum ripple allowed in the pass band is 0.1 dB, and -20dB attenuation at 2.6GHz.According to the filter design specifications, Chebyshev response with a passband ripple of 0.1 dB can satisfy these requirements Here, We have, 𝑓1 = 2.46 GHz, 𝑓2 = 2.54 GHz, so △ = 𝜔2 − 𝜔1 𝜔0 (1) △= 0.032 Normalized frequency given by following method 𝜔 𝜔𝑐 = 1 △ ( 𝜔 𝜔𝑐 − 𝜔𝑐 𝜔 ) (2) 𝜔 𝜔𝑐 = 2.451923 Next step for designing any Chebychev filter is to determine the order of the filter. The filter order is number of inductive and capacitive elements that should be included in the filter design. This can be done by following formulation 𝑛 = cosh−1 √10 𝐿 𝑇 10 −1 𝐾 − 1 cosh−1 ( 𝜔 𝜔0 ) (3) 𝑛 ≅ 3 Where LT is the minimum attenuation at frequency WT, and K=10 𝐿 𝑎𝑟 10 with Lar being the maximum ripple in 0.1 dB allowed in the pass band which is 0.1 dB [3] , Normalized frequency given by equation (2). The order of the filter is a measure of the minimum number of elements to be included in the filter to realize the required amount of ripple in the pass band and attenuation at a frequency outside of the pass band.
  • 2. © 2015 IJEDR | Volume 3, Issue 2 | ISSN: 2321-993 IJEDR1502199 International Journal of Engineering Development and Research (www.ijedr.org) 1203 III. CALCULATE LOW-PASS FILTER PROTOTYPES AND LUMPED ELEMENTS VALUES OF THE BANDPASS FILTER The following equations are used to calculate the Element values for equal-ripple low-pass filter prototypes (0.1 dB ripple) 𝑎 𝑘 = sin ( (2𝑘 − 1)𝜋 2 ∗ 𝑛 ) (4) 𝑏 𝑘 = 𝛾2 + 𝑠𝑖𝑛2 ( 𝑘𝜋 𝑛 ) (5) 𝛽 = ln [coth ( 𝐿 𝑎𝑟 17.37 )] (6) 𝛾 = sinh ( 𝛽 2 ∗ 𝑛 ) (7) 𝑔0 = 1 (8) 𝑔1 = 2 ∗ 𝑎1 𝛾 (9) 𝑔 𝑘 = 4 ∗ 𝑎 𝑘−1 ∗ 𝑎 𝑘 𝑏 𝑘−1 ∗ 𝑔 𝑘−1 (10) gn+1 = 1 (11) In above equetions k = 1,2,3,4…… Now we can get following table for 0.1 dB ripple level with the help of equation (4) to (11) for various TABLE I. ELEMENT VALUES FOR EQUAL-RIPPLE LOW-PASS FILTER PROTOTYPES FOR 0.1DB RIPPLE n 𝑔1 𝑔2 𝑔3 𝑔4 𝑔5 𝑔6 1 0.3052 1.0 2 0.8431 0.6220 1.3554 3 1.0315 1.1474 1.0315 1.0 4 1.1088 1.3062 1.7704 0.8181 1.3554 5 1.1468 1.3712 1.9750 1.3712 1.1468 1.0 From above Table I, for n = 3 order, the element values obtained are 𝑔1 = 1.0315 = 𝐿1 ′ 𝑔2 = 1.1474 = 𝐶2 ′ 𝑔3 = 1.0315 = 𝐿3 ′ Lumped Values of the Bandpass Filter calculate as following method. Now we can calculate L and C component value as following parameter. The Lumped values of the Band pass filter after frequency and impedance scaling are given by For Series L&C LK = Z0 ∗ LK ′ ω0 ∗△ (12) 𝐶 𝐾 = △ 𝑍0 ∗ 𝐿 𝐾 ′ ∗ 𝜔0 (13) For Shunt L&C
  • 3. © 2015 IJEDR | Volume 3, Issue 2 | ISSN: 2321-993 IJEDR1502199 International Journal of Engineering Development and Research (www.ijedr.org) 1204 𝐿 𝐾 = △∗ 𝑍0 𝜔0 ∗ 𝐶 𝐾 ′ (14) 𝐶 𝐾 = 𝐶 𝐾 ′ 𝑍0 ∗ 𝜔0 ∗△ (15) Where𝑍0 = 50 Ω, Δ = 0.032 and 𝑓0 = 2.5 GHz IV.ADS SIMULATION OF LC COMPONENTS AND RESULT Now put all values if Series and Shunt elements value in Following Bandpass filter design in ADS (Advanced Design System) Figure 1. ADS diagram of lumped elements Figure 2. S-parameter simulation schematic of filter Practically, it is not possible to design this bandpass filter at high frequency in such LC components, for that we can used Microstrip line as a transmission line V. PARALLEL COUPLED MICROSTRIP FILTER A general structure of parallel-coupled microstrip band-pass filters shown in Figure 6 that use half-wavelength line resonators. The coupling gaps correspond to the admittance inverters in the low-pass prototype circuit Even and Odd mode characteristic impedances of parallel-coupled half-wave resonators are computed using admittance inverters. These even and odd mode impedances are then used to compute physical dimension of the filter. In this way, the required parallel coupled microstrip filter parameters can be easily derived for Chebyshev prototypes.
  • 4. © 2015 IJEDR | Volume 3, Issue 2 | ISSN: 2321-993 IJEDR1502199 International Journal of Engineering Development and Research (www.ijedr.org) 1205 Figure 3. Common structure of microstrip parallel coupled line bandpass filter The strips are arranged parallel close to each other, so that they are coupled with certain coupling factors. We use the following equations for designing the parallel-coupled filter 𝐽01 𝑌0 = √ 𝜋 ∗ 𝐹𝐵𝑊 2 ∗ 𝑔0 ∗ 𝑔1 (16) For j=1 to n-1: 𝐽𝑗,𝑗+1 𝑌0 = 𝜋 ∗ 𝐹𝐵𝑊 2 1 √ 𝑔𝑗 ∗ 𝑔𝑗+1 (17) 𝐽 𝑛,𝑛+1 𝑌0 = √ 𝜋 ∗ 𝐹𝐵𝑊 2 ∗ 𝑔 𝑛 ∗ 𝑔 𝑛+1 (18) Where 𝑔0, 𝑔1 … 𝑔 𝑛 are the element of a ladder-type low-pass prototype with a normalized cut-off Ω 𝑐 = 1, and FBW is the fractional bandwidth of band-pass filter. 𝐽𝐽,𝐽+1 are the characteristic admittances of J-inverters and 𝑌0 is the characteristic admittance of the terminating lines. The equation above will be used in end-coupled line filter because the both types of filter can have the same low-pass network representation. However, the implementation will be different. To realize the J-inverters obtained above, the even- and odd-mode characteristic impedances of the coupled microstrip line resonators are determined by For j=0 to n (𝑍0𝑒) 𝑗,𝑗+1 = 1 𝑌0 [1 + 𝐽𝑗,𝑗+1 𝑌0 + ( 𝐽𝐽,𝐽+1 𝑌0 )2 ] (19) (𝑍0𝑜) 𝑗,𝑗+1 = 1 𝑌0 [1 − 𝐽𝑗,𝑗+1 𝑌0 + ( 𝐽𝐽,𝐽+1 𝑌0 )2 ] (20) TABLE II. CALCULATED VALUES OF EVEN AND ODD RESISTANCES Stage(i,i+1) 𝑍0𝑒Ω 𝑍0𝑜Ω 1,4 63.4729 41.3994 2,3 52.4178 47.7975 The next step of the filter design is to find the dimensions of coupled microstrip lines that exhibit the desired even mode and odd-mode impedances. Firstly, we determine the equivalent single microstrip shape ratios 𝑊 𝐻 essentially responsible to relate the coupled line ratios to single line ratios. For a single microstrip line,
  • 5. © 2015 IJEDR | Volume 3, Issue 2 | ISSN: 2321-993 IJEDR1502199 International Journal of Engineering Development and Research (www.ijedr.org) 1206 𝑍0𝑠𝑜 = (𝑍0𝑜) 𝑗,𝑗+1 2 (21) 𝑍0𝑠𝑒 = (𝑍0𝑒) 𝑗,𝑗+1 2 (22) For a single microstrip line, The approximate expressions for W/h (Figure 1) in terms of 𝑍 𝑐 and 𝜀 𝑟, derived by Wheeler and Hammerstad, are available For 𝑊 𝐻 ≤ 2 𝑊 𝐻 = 8 ∗ exp(𝐴) exp(2 ∗ 𝐴) − 2 (23) Where 𝐴 = 𝑍 𝐶 60 √ 𝜀 𝑟 + 1 2 + 𝜀 𝑟 − 1 𝜀 𝑟 + 1 {0.23 + 0.11 𝜀 𝑟 } (24) For 𝑊 𝐻 ≥ 2 W H = 2 π {(B − 1) − ln(2 ∗ B − 1) + εr − 1 2 ∗ εr [ln(B − 1) + 0.39 − 0.61 εr ]} (25) Where 𝐵 = 60𝜋2 𝑍 𝐶√ 𝜀 𝑟 (26) S H = 2 π cosh−1 [ cosh (( π 2 ) ( W H ) se ) + cosh (( π 2 ) ( W H ) so ) − 2 cosh (( π 2 ) ( W H ) so ) − cosh (( π 2 ) ( W H ) se ) ] (27) W H = 1 π [cosh−1 1 2 ((cosh ( π ∗ S 2 ∗ H ) − 1) + (cosh ( π ∗ S 2 ∗ H ) + 1) ∗ cosh (( π 2 ) ∗ ( W H ) se )) − ( π ∗ S 2 ∗ H )] (28) TABLE III. CALCULATED DIMENSIONS OF TRANSMISSION LINE SECTIONS Line Description W(mm) L(mm) S(mm) 50 ohm-line 2.2910 16.4079 - Coupled line 1 and 4 2.0253 16.5025 0.6110 Coupled line 2 and 3 2.2738 16.4422 3.1505
  • 6. © 2015 IJEDR | Volume 3, Issue 2 | ISSN: 2321-993 IJEDR1502199 International Journal of Engineering Development and Research (www.ijedr.org) 1207 VI. DESIGN SPECIFICATION The filter was modelled in ADS as shown in Figure 4. Using LineCalc tool in ADS, the dimension of the microstrip line viz. length (L), width (W) and gap(S) To match with the 50 ohm circuit, MLIN (Microstrip Line) components are added to both sides of the filter whose characteristic impedance is 50 ohm The Parameters of the substrate set in MSub controller are: 1) H: substrate thickness (1.2 mm) 2) Er: substrate relative dielectric constant (4.4) 3) Cond: metal conductivity (5.8e7) 4) Hu: upper ground substrate spacing (1.0E+33mm) 5) T: the thickness of metal layer (0.0127 mm) 6) TanD: dielectric loss tangent (0.01) Figure 4. Model of the band pass filter in ADS Figure 5 Layout of parallel-coupled microstrip bandpass filter Simulation result in momentum shown in following figure
  • 7. © 2015 IJEDR | Volume 3, Issue 2 | ISSN: 2321-993 IJEDR1502199 International Journal of Engineering Development and Research (www.ijedr.org) 1208 Figure 6. Momentum simulation results VII. Fabrication Results Analysis Fabrication is done by Etching technique with FR4 substrate material, and its model is following Figure 7. Fabricate bandpass filter model Figure 8. Hardware result of S(1,1)
  • 8. © 2015 IJEDR | Volume 3, Issue 2 | ISSN: 2321-993 IJEDR1502199 International Journal of Engineering Development and Research (www.ijedr.org) 1209 Figure 9. Hardware result of S(2,1) In Figure 9, while measurement of S(2,1) using VNA also consider both cables loss which is -14.606dB cable loss.so we can compare schematic and practical results as following Table IV TABLE IV. COMPARISON OF SCHEMATIC AND PRACTICAL RESULTS Index Return Loss S(1,1)dB Insertion loss S(2,1)dB Schematic Result -20.64 -4.780 Practical Result -20.63 -3.144 VIII. CONCLUSION Designing a Parallel-Coupled Bandpass filter for IRNSS Application, has been presented. For the selected center frequency of 2.5 GHz and on a substrate, we select FR4 with dielectric constant 4.4, because it is easily available in market, less cost and get very good result. We get result as insertion loss around -4.87dB and return loss is -20.64dB in passband with 80 MHz bandwidth in schematic, and insertion loss is around -3.144dB and return loss is -20.63dB in hardware and which is desirable. REFERENCES [1] Min Zhang; Yimin Zhao; Wei Zhang, "The simulation of microstrip Band Pass Filters based on ADS," Antennas, Propagation & EM Theory (ISAPE), 2012 10th International Symposium, pp. 909-912, Oct. 2012, ISBN: 978-1-4673-1799-3 [2] Seghier, S.; Benahmed, N.; Bendimerad, F.T.; Benabdallah, N.,"Design of parallel coupled microstrip bandpass filter for FM Wireless applications," Sciences of Electronics, Technologies of Information and Telecommunications (SETIT), 2012 6th International Conference, pp.207-211, March.2012, ISBN: 978-1-4673-1657-6 [3] Ma, Jun; Sun, Zhengwen; Chen, Yong, "Design and simulation of L-band wideband microstrip filter," Information Science and Technology (ICIST), 2013 International Conference, pp. 183-186, March 2013, ISBN: 978-1-4673-5137-9 [4] Bey-Ling Su; Ray Yueh-Ming Huang, "5.8 GHz bandpass filter design using planar couple microstrip lines," Communications, Circuits and Systems, 2004.ICCCAS 2004. 2004 International Conference on, vol.2, pp. 1204-1207, June 2004, ISBN: 0-7803- 8647-7 [5] Naghar, A.; Aghzout, O.; Vazquez Alejos, A.; Garcia Sanchez, M.; Essaaidi, M., "Development of a calculator for Edge and Parallel Coupled Microstrip band pass filters," Antennas and Propagation Society International Symposium (APSURSI), 2014 IEEE , pp. 2018-2019, July 2014, ISBN: 978-1-4799-3538-3 [6] Lolis, L.; Pelissier, M.; Bernier, C.; Dallet, D.; Begueret, J-B, "System design of bandpass sampling RF receivers," Electronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference, pp. 691-694, Dec.2009, ISBN: 978-1-4244-5090- 9 [7] E. O. Hammerstard, “Equations for microstrip circuit design,” in Proceedings of the European Microwave Conference, Hamburg, Germany, pp. 268–272, 1975 [8] H. Wheeler, “Transmission line properties of parallel strips separated by a dielectric sheet”, IEEE Trans., MTT-13, pp. 172-185, 1965, ISSN: 0018-9480 [9] D. M. Pozar, Microwave Engineering, 3rd Ed. New York: Wiley, pp. 389-426, 2005 [10] Annapurna Das and Sisir K Das, “Microwave Engineering”, Mac Graw Hill, pp. 279-310, 2001 [11] J. S. Hong, M. J. Lancaster, “Microstrip Filter for RF/Microwave Applications”, A Wiley Interscience Publication, Canada, pp. 29-158, 2001. [12] R. K. Mongia, I.J. Bahl, P. Bhartia, J. Hong “RF and Microwave Coupled Line Circuits Second Edition”, pp. 53-102, 2007 [13] ADS Circuit Design Cookbook 2.0, pp. 3-98, 2011