This document provides an overview of the silicon controlled rectifier (SCR). It discusses the SCR's four-layer semiconductor structure with three p-n junctions. The document outlines the SCR's history, construction, v-i characteristics, switching on and off methods, applications, advantages, and disadvantages. Key points covered include the SCR's ability to handle large voltage, current and power; its simple triggering circuit and control; and its limitations for higher frequency use and negative gate current.