Download as PDF, PPTX
Uploaded bySamsu Deen
Power semiconductor devices
1. The document discusses several power semiconductor devices used in power electronics, including power diodes, MOSFETs, IGBTs, and thyristors. 2. It provides information on the construction, operation, characteristics and switching behavior of each device. 3. The devices can be classified as either majority carrier devices like MOSFETs and diodes, which have very fast switching but higher voltage drops, or minority carrier devices like IGBTs and thyristors, which can block higher voltages but switch more slowly.
More Related Content
Similar to Power semiconductor devices
Power semiconductor devices
- 1. Power Semiconductor Devices PowerElectronics Power Semiconductor Devices1
- 2. A brief surveyof power semiconductor devices Power Electronics Power Semiconductor Devices2 ● Power diodes ● Power MOSFETs ● Insulated Gate Bipolar Transistors (IGBTs) ● Thyristors (SCR, GTO) ● On resistance vs. breakdown voltage vs. switching times ● Minority carrier and majority carrier devices
- 3. The power diode PowerElectronics Power Semiconductor Devices3 Appearance Construction Symbol
- 4. Reverse-biased power diode PowerElectronics Power Semiconductor Devices4
- 5. Forward-biased power diode PowerElectronics Power Semiconductor Devices5
- 6. Typical power diodecharacteristics Power Electronics Power Semiconductor Devices6
- 7. Typical diode switchingwaveforms Power Electronics Power Semiconductor Devices7
- 8. Types of powerdiodes Power Electronics Power Semiconductor Devices8 Standard recovery Reverse recovery time not specified, intended for 50/60Hz Fast recovery and ultra-fast recovery Reverse recovery time and recovered charge specified Intended for converter applications Schottky diode A majority carrier device Essentially no recovered charge Model with equilibrium i-v characteristic, in parallel with depletion region capacitance Restricted to low voltage (few devices can block 100V or more)
- 9. Characteristics of severalcommercial power rectifier diodes Power Electronics Power Semiconductor Devices9
- 10. The power MOSFET PowerElectronics Power Semiconductor Devices10 Appearance Symbol n-channel p-channel
- 11. The construction ofPower MOSFET Power Electronics Power Semiconductor Devices11
- 12. MOSFET: Off state PowerElectronics Power Semiconductor Devices12
- 13. MOSFET: On state PowerElectronics Power Semiconductor Devices13
- 14. MOSFET body diode PowerElectronics Power Semiconductor Devices14
- 15. Typical MOSFET characteristics(1) Power Electronics Power Semiconductor Devices15
- 16. Typical MOSFET characteristics(2) Power Electronics Power Semiconductor Devices16
- 17. Power MOSFET switchingwaveform Power Electronics Power Semiconductor Devices17
- 18. A simple MOSFETequivalent circuit Power Electronics Power Semiconductor Devices18
- 19. Characteristics of severalcommercial power MOSFETs Power Electronics Power Semiconductor Devices19
- 20. MOSFET: conclusion Power ElectronicsPower Semiconductor Devices20 ● A majority-carrier device: fast switching speed ● Typical switching frequencies: tens and hundreds of kHz ● On-resistance increases rapidly with rated blocking voltage ● Easy to drive ● The device of choice for blocking voltages less than 500V ● 1000V devices are available, but are useful only at low power levels(100W) ● Part number is selected on the basis of on-resistance rather than current rating
- 21. The Insulated GateBipolar Transistor (IGBT) Power Electronics Power Semiconductor Devices21 Appearance Symbol
- 22. The construction ofIGBT Power Electronics Power Semiconductor Devices22
- 23. The equivalent circuitof IGBT Power Electronics Power Semiconductor Devices23
- 24. Typical IGBT characteristics PowerElectronics Power Semiconductor Devices24
- 25. IGBT switching waveform PowerElectronics Power Semiconductor Devices25
- 26. Current tailing inIGBTs Power Electronics Power Semiconductor Devices26
- 27. Characteristics of several commercialdevices Power Electronics Power Semiconductor Devices27
- 28. Conclusions: IGBT Power ElectronicsPower Semiconductor Devices28 ● Becoming the device of choice in 500-1700V applications, at power levels of 1-1000kW ● Positive temperature coefficient at high current —easy to parallel and construct modules ● Forward voltage drop: diode in series with on-resistance. 2- 4V typical ● Easy to drive —similar to MOSFET ● Slower than MOSFET, but faster than Darlington, GTO, SCR ● Typical switching frequencies: 3-30kHz ● IGBT technology is rapidly advancing —next generation: 2500V
- 29. The Thyristor (siliconcontrolled rectifier, SCR) Power Electronics Power Semiconductor Devices29 Appearance Symbol
- 30. The equivalent circuitand construction of thyristor Power Electronics Power Semiconductor Devices30
- 31. Typical thyristor characteristics PowerElectronics Power Semiconductor Devices31
- 32. Thyristor switching waveform PowerElectronics Power Semiconductor Devices32
- 33. Why the conventionalSCR cannot be turned off via gate control Power Electronics Power Semiconductor Devices33
- 34. The Gate Turn-OffThyristor (GTO) Power Electronics Power Semiconductor Devices34
- 35. Summary: Thyristors Power ElectronicsPower Semiconductor Devices35 ● The thyristor family: double injection yields lowest forward voltage drop in high voltage devices. More difficult to parallel than MOSFETs and IGBTs ● The SCR: highest voltage and current ratings, low cost, passive turn-off transition ● The GTO: intermediate ratings (less than SCR, somewhat more than IGBT). Slower than IGBT. Slower than MCT. Difficult to drive. ● The MCT: So far, ratings lower than IGBT. Slower than IGBT. Easy to drive. Still emerging devices?
- 36. Summary of powersemiconductor devices Power Electronics Power Semiconductor Devices36 1. Majority carrier devices, including the MOSFET and Schottky diode, exhibit very fast switching times, controlled essentially by the charging of the device capacitances. However, the forward voltage drops of these devices increases quickly with increasing breakdown voltage. 2. Minority carrier devices, including the BJT, IGBT, and thyristor family, can exhibit high breakdown voltages with relatively low forward voltage drop. However, the switching times of these devices are longer, and are controlled by the times needed to insert or remove stored minority charge. 3. Energy is lost during switching transitions, due to a variety of mechanisms. The resulting average power loss, or switching loss, is equal to this energy loss multiplied by the switching frequency. Switching loss imposes an upper limit on the switching frequencies of practical converters.
- 37. Two classifications basedon carriers Power Electronics Power Semiconductor Devices37 Classification I Classification II